2SK3419 Silicon N Channel MOS FET High Speed Power Switching ADE-208-942 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 4.3 m typ. • 4 V gate drive device • High speed switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3419 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 90 A 360 A 90 A 65 A 362 mJ 150 W Note 1 Drain peak current ID Body-drain diode reverse drain current I DR Avalanche current I AP Avalanche energy (pulse) Note 3 EAR Note 3 Note 2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C: Rg ≥ 50 Ω 2 2SK3419 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 — — V I D = 10 mA, VGS = 0 Gate to source leak current I DSS — — 10 µA VDS = 60 V, VGS = 0 Zero Gate voltage drain drain current I GSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 55 90 — S I D = 45 A, VDS = 10 V Note 1 Static drain to source on state RDS(on) — 4.3 5.5 mΩ I D = 45 A, VGS = 10 V Note 1 resistance RDS(on) — 6.0 9.0 mΩ I D = 45 A, VGS = 4 V Note 1 Input capacitance Ciss — 9770 — pF VDS = 10 V Output capacitance Coss — 1340 — pF VGS = 0 Reverse transfer capacitance Crss — 470 — pF f = 1 MHz Total gate charge Qg — 180 — nc VDD = 50 V Gate to source charge Qgs — 32 — nc VGS = 10 V Gate to drain charge Qgd — 36 — nc I D = 90 A Turn-on delay time td(on) — 53 — ns VGS = 10 V Rise time tr — 320 — ns I D = 45 A Turn-off delay time td(off) — 700 — ns RL = 0.67 Ω Fall time tf — 380 — ns Body-drain diode forward voltage VDF — 1.0 — V I F = 90 A, VGS = 0 Body-drain diode reverse recovery time trr — 75 — ns I F = 90 A, VGS = 0 diF/dt = 50 A/µs Note: Note 1 1. Pulse test 3 2SK3419 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 ID (A) 300 120 Drain Current Channel Dissipation Pch (W) 160 80 40 100 30 10 Operation in 3 this area is =1 0m s( 1 e sh ot (T ratio ) c= n 25 °C ) Op limited by RDS(on) 1 50 100 Case Temperature 150 Tc (°C) 0.1 Ta = 25°C 3 0.1 0.3 1 10 Drain to Source Voltage 200 Typical Output Characteristics 80 VGS = 10 V 30 100 VDS (V) Typical Transfer Characteristics 100 V DS = 10 V Pulse Test 5V ID (A) 100 4V 60 Drain Current ID (A) DC 1 10 0 µs 0 1m µs s 0.3 0 Drain Current PW 40 3V 20 80 Pulse Test 60 40 25°C 20 75°C Tc = –25°C 2.5 V 0 4 2 4 6 Drain to Source Voltage 8 10 VDS (V) 0 1 2 3 Gate to Source Voltage 4 5 VGS (V) 2SK3419 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source on State Resistance RDS(on) (mΩ) 0.4 0.3 I D = 50 A 0.2 20 A 0.1 10 A 0 Static Drain to Source on State Resistance RDS(on) (mΩ) 100 Pulse Test 16 20 VGS (V) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 12 8 4 0 –50 Pulse Test 30 VGS = 4 V 10 3 10 V 1 0.3 0.1 12 4 8 Gate to Source Voltage I D = 50 A 10, 20 A 4V VGS = 10 V 10, 20, 50 A 0 50 100 150 Case Temperature Tc (°C) 200 1 3 30 10 Drain Current 100 300 1000 ID (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage VDS(on) (V) 0.5 Static Drain to Source on State Resistance vs. Ddrain Current 500 200 V DS = 10 V Pulse Test 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 0.5 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 5 2SK3419 Body-Drain Diode Reverse Recovery Time 30000 500 di / dt = 50 A / µs V GS = 0, Ta = 25°C VGS = 0 f = 1 MHz Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 10000 Ciss 3000 Coss 1000 300 20 10 0.1 100 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 20 VDS = 50 V 25 V 10 V V DS V DS = 50 V 25 V 10 V 80 160 240 320 Gate Charge Qg (nc) 6 40 50 VDS (V) 12 8 4 0 400 t d(off) 500 Switching Time t (ns) 60 40 16 V GS VGS (V) 80 10 20 30 Drain to Source Voltage 1000 Gate to Emitter Voltage VDS (V) Collector to Emitter Voltage 20 I D = 90 A Crss Switching Characteristics Dynamic Input Characteristics 100 Typical Capacitance vs. Drain to Source Voltage tf 200 100 50 20 tr t d(on) V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 10 2 5 10 20 0.1 0.2 0.5 1 Drain Current ID (A) 50 100 2SK3419 Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IF (A) 100 Pulse Test 10 V 80 5V 60 V GS = 0, –5 V 40 20 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage 400 I AP = 65 A V DD = 15 V duty < 0.1 % Rg > 50 Ω 320 240 160 80 0 25 VSDF (V) 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit V DS Monitor Avalanche Waveform EAR = L 1 2 • L • I AP • 2 I AP Monitor VDSS VDSS – V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50Ω 0 VDD 7 2SK3419 Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch - c(t) = γ s (t) • θ ch - c θ ch- c = 0.83°C/W, Tc = 25°C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu ho 1s 0.03 0.01 10 µ D= PW T PW T 100 µ 1m 10 m 100 m Pulse Width PW (s) 1 Switching Time Test Circuit 10 Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50Ω V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK3419 Package Dimensions 15.6 ± 0.3 Unit: mm 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of January, 2001 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P — Conforms 5.0 g 9 2SK3419 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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