HITACHI 2SK2203

2SK2203
Silicon N-Channel MOS FET
ADE-208-139
1st. Edition
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC-DC converter
Outline
TO-3PFM
D
G
1
S
2
3
1. Gate
2. Drain
3. Source
2SK2203
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
50
A
200
A
50
A
50
A
214
mJ
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP *
3
EAR*
3
2
1
Channel dissipation
Pch*
60
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
3. Value at Tch = 25 °C, Rg ≥ 50 Ω
2
2SK2203
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.25
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.007
0.01
Ω
I D = 25 A
VGS = 10 V*1
—
0.009
0.013
Ω
I D = 25 A
VGS = 4 V*1
Forward transfer admittance
|yfs|
40
65
—
S
I D = 25 A
VDS = 10 V*1
Input capacitance
Ciss
—
8330
—
pF
VDS = 10 V
Output capacitance
Coss
—
3500
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
550
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
50
—
ns
I D = 25 A
Rise time
tr
—
270
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
1400
—
ns
RL = 1.2 Ω
Fall time
tf
—
560
—
ns
Body to drain diode forward
voltage
VDF
—
0.95
—
V
I F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
150
—
ns
I F = 50 A, VGS = 0,
diF / dt = 50 A / µs
Note
1. Pulse Test
3
2SK2203
Power vs. Temperature Derating
I D (A)
60
300
40
20
PW
30
DC
10
50
100
150
200
t)
Ta = 25 °C
1
10 20
2
5
50 100
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
50
(A)
10 V
6V
4V
40
3V
ID
3.5 V
ho
C)
Tc (°C)
60
Drain Current
I D (A)
Drain Current
80
1s
5°
Typical Output Characteristics
100
s(
ati
Operation in
on
this area is
(T
c=
limited by R DS(on)
2
1
Case Temperature
=1
0m
Op
er
3
0
10 µs
10
0µ
s
1m
s
100
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
1000
80
40
VGS = 2.5 V
20
30
V DS = 10 V
Pulse Test
–25 °C
Tc = 25 °C
75 °C
20
10
Pulse Test
0
4
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
4
5
V GS (V)
2SK2203
Static Drain to Source State Resistance
vs. Drain Current
0.6
Drain to Source On State Resistance
R DS(on) ( Ω )
V DS(on) (V)
1.0
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
0.8
I D = 50 A
0.4
0.05
Pulse Test
0.02
0.01
4V
0.005
VGS = 10 V
0.002
20 A
0.2
0.0005
2
4
6
Gate to Source Voltage
8
Pulse Test
0.04
0.03
I D = 50 A
V GS = 4 V
0.01
0
–40
3
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.05
0.02
1
10
10 A
10 A 20 A
20 A
10 V
50 A
0
40
80
120
160
Case Temperature Tc (°C)
10
30
100 300
Drain Current I D (A)
1000
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
0
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0.001
10 A
100
–25 °C
30
Tc = 25 °C
10
75 °C
3
1
V DS = 10 V
Pulse Test
0.3
0.1
0.1
0.3
1
3
10
30
100
Drain Current I D (A)
5
2SK2203
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
100000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
200
100
50
20
VGS = 0
f = 1 MHz
100
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
12
VDS
I D = 50 A
40
V DD = 10 V
25 V
50 V
80
160
240
320
Gate Charge Qg (nc)
8
4
0
400
Switching Time t (ns)
16
V GS (V)
V DD = 10 V
25 V
50 V
30
40
50
5000
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
6
VGS
20
Switching Characteristics
20
80
10
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
0
1000
Crss
5
0.1
20
Coss
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
10
60
Ciss
10000
2000
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
t d(off)
1000
500
tf
200
tr
100
50
0.1
t d(on)
0.3
1
3
Drain Current
10
30
I D (A)
100
2SK2203
Reverse Drain Current vs.
Souece to Drain Voltage
Maximun Avalanche Energy vs.
Channel Temperature Derating
Repetive Avalanche Energy E AR (mJ)
Reverse Drain Current I DR (A)
100
Pulse Test
80
10 V
60
5V
V GS = 0, –5 V
40
20
0
0.4
0.8
1.2
Drain to Source Voltage
1.6
250
I AP = 50 A
V DD = 25 V
duty < 0.1 %
Rg > 50 Ω
200
150
100
2.0
50
0
25
V DS (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit and Waveform
V DS
Monitor
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
–15 V
50Ω
0
VDD
7
Normalized Transient Thermal Impedance γS (t)
2SK2203
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
TC = 25°C
D=1
0.5
0.3
0.2
θch–c (t) = γS (t) · θch–c
θch–c = 2.08°C/W, TC = 25°C
0.1
0.1
0.03
0.01
10 µ
0.05
PDM
0.02
0.01
se
Pul
hot
S
1
T
100 µ
1m
10 m
Pulse Width PW (s)
PW
100 m
Switching Time Test Circuit
1
10
Waveform
Vout
Monitor
Vin Monitor
D = PW
T
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
15.6 ± 0.3
5.5 ± 0.3
5.0
1.6
1.4 Max
3.2
21.0 ± 0.5
4.0
2.6
1.4 Max
2.7
19.9 ± 0.3
φ3.2
+ 0.4
– 0.2
5.0 ± 0.3
Unit: mm
1.0 ± 0.2
5.45 ± 0.5
0.6 ± 0.2
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3PFM
—
—
5.6 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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