HITACHI 2SK2529

2SK2529
Silicon N-Channel MOS FET
ADE-208-356F
7th. Edition
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
R DS(on) = 7 mΩ typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
TO-220CFM
D
12
3
1. Gate
2. Drain
3. Source
G
S
2SK2529
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
50
A
200
A
50
A
45
A
174
mJ
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP *
3
EAR*
3
2
1
Channel dissipation
Pch*
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK2529
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
7
10
mΩ
I D = 25 A
VGS = 10 V*1
—
10
16
mΩ
I D = 25 A
VGS = 4 V*1
Forward transfer admittance
|yfs|
35
55
—
S
I D = 25 A
VDS = 10 V*1
Input capacitance
Ciss
—
3550
—
pF
VDS = 10 V
Output capacitance
Coss
—
1760
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
500
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
35
—
ns
I D = 25 A
Rise time
tr
—
230
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
470
—
ns
RL = 1.2 Ω
Fall time
tf
—
360
—
ns
Body to drain diode forward
voltage
VDF
—
0.85
—
V
I F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
135
—
ns
I F = 50 A, VGS = 0
diF / dt = 50 A / µs
Note
1. Pulse Test
3
2SK2529
Power vs. Temperature Derating
s
(1
sh
ot
)
c
(T
=
Operation in
this area is
limited by R DS(on)
n
I D (A)
Drain Current
s
25
)
°C
1
50
100
150
200
Tc (°C)
Typical Output Characteristics
10 V 6 V
4V
ID
3.5 V
60
3V
40
20
VGS = 2.5 V
0
Typical Transfer Characteristics
100
(A)
Pulse Test
5V
80
Ta = 25 °C
0.5
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V DS (V)
2
4
6
Drain to Source Voltage
8
10
V DS (V)
Drain Current
100
I D (A)
m
m
tio
ra
5
1
10
2
Case Temperature
Drain Current
20
10
=
µs
µs
PW
50
pe
10
0
4
100
O
20
10
200
0
30
Maximum Safe Operation Area
C
D
Channel Dissipation
500
10
Pch (W)
40
80
V DS = 10 V
Pulse Test
60
40
25°C
Tc = 75°C
20
0
–25°C
1
2
3
Gate to Source Voltage
4
5
V GS (V)
2SK2529
Static Drain to Source on State Resistance
vs. Drain Current
0.6
Pulse Test
0.8
I D = 50 A
0.4
Drain to Source On State Resistance
R DS(on) ( Ω )
V DS(on) (V)
1.0
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.2
0.1
0.05
0.02
VGS = 4 V
0.01
0.005
0.2
20 A
10 A
10 V
0.002
0.001
0.0005
6
2
4
Gate to Source Voltage
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Static Drain to Source on State Resistance
vs. Temperature
0.04
Pulse Test
0.032
0.024
I D = 50 A
10, 20 A
0.016
V GS = 4 V
0.008
10, 20, 50 A
10 V
0
–40
1
8
10
V GS (V)
0
40
80
120
160
Case Temperature Tc (°C)
3
10
30
100 300
Drain Current I D (A)
1000
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
0
500
200
V DS = 10 V
Pulse Test
100
50
Tc = –25 °C
20
25 °C
10
5
75 °C
2
1
0.5
0.1
0.3
1
3
10
30
100
Drain Current I D (A)
5
2SK2529
Typical Capacitance vs.
Drain to Source Voltage
5000
10000
2000
5000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
1000
500
200
100
50
5
0.1
12
V GS
40
V DD = 50 V
25 V
10 V
40
80
120
160
Gate Charge Qg (nc)
30
40
50
8
4
0
200
V GS (V)
5000
2000
Switching Time t (ns)
V DS
20
Drain to Source Voltage V DS (V)
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
6
16
V DD = 10 V
25 V
50 V
10
Switching Characteristics
20
I D = 50 A
VGS = 0
f = 1 MHz
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
80
0
500
100
Dynamic Input Characteristics
20
Coss
1000
200
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
10
60
2000
Crss
20
100
Ciss
1000
t d(off)
500
tf
200
tr
100
t d(on)
50
20
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
10
5
0.1
0.3
1
3
Drain Current
10
30
I D (A)
100
2SK2529
Reverse Drain Current vs.
Source to Drain Voltage
Maximun Avalanche Energy vs.
Channel Temperature Derating
Repetive Avalanche Energy E AR (mJ)
Pulse Test
80
10 V
60
5V
V GS = 0, –5 V
40
20
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
200
I AP = 45 A
V DD = 25 V
duty < 0.1 %
Rg > 50 Ω
160
120
2.0
V SD (V)
80
40
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ s (t)
Reverse Drain Current I DR (A)
100
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.01
10 µ
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 3.57 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
0.0
t
ho
lse
PW
T
PW
pu
T
1s
100 µ
D=
1m
10 m
Pulse Width
100 m
1
10
PW (S)
7
2SK2529
Avalanche Test Circuit and Waveform
EAR =
L
V DS
Monitor
1
2
• L • I AP •
2
VDSS
VDSS – V DD
I AP
Monitor
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
Unit: mm
2.54
2.54
15.0 ± 0.3
4.5 ± 0.3
2.7 ± 0.2
2.5 ± 0.2
13.60 ± 1.0
0.6 ± 0.1
4.1 ± 0.3
1.0 ± 0.2
1.15 ± 0.2
φ 3.2 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
0.7 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220CFM
—
—
1.9 g
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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