2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D 12 3 1. Gate 2. Drain 3. Source G S 2SK2529 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 50 A 200 A 50 A 45 A 174 mJ Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR Avalanche current Avalanche energy I AP * 3 EAR* 3 2 1 Channel dissipation Pch* 35 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2 2SK2529 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 7 10 mΩ I D = 25 A VGS = 10 V*1 — 10 16 mΩ I D = 25 A VGS = 4 V*1 Forward transfer admittance |yfs| 35 55 — S I D = 25 A VDS = 10 V*1 Input capacitance Ciss — 3550 — pF VDS = 10 V Output capacitance Coss — 1760 — pF VGS = 0 Reverse transfer capacitance Crss — 500 — pF f = 1 MHz Turn-on delay time t d(on) — 35 — ns I D = 25 A Rise time tr — 230 — ns VGS = 10 V Turn-off delay time t d(off) — 470 — ns RL = 1.2 Ω Fall time tf — 360 — ns Body to drain diode forward voltage VDF — 0.85 — V I F = 50 A, VGS = 0 Body to drain diode reverse recovery time t rr — 135 — ns I F = 50 A, VGS = 0 diF / dt = 50 A / µs Note 1. Pulse Test 3 2SK2529 Power vs. Temperature Derating s (1 sh ot ) c (T = Operation in this area is limited by R DS(on) n I D (A) Drain Current s 25 ) °C 1 50 100 150 200 Tc (°C) Typical Output Characteristics 10 V 6 V 4V ID 3.5 V 60 3V 40 20 VGS = 2.5 V 0 Typical Transfer Characteristics 100 (A) Pulse Test 5V 80 Ta = 25 °C 0.5 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current 100 I D (A) m m tio ra 5 1 10 2 Case Temperature Drain Current 20 10 = µs µs PW 50 pe 10 0 4 100 O 20 10 200 0 30 Maximum Safe Operation Area C D Channel Dissipation 500 10 Pch (W) 40 80 V DS = 10 V Pulse Test 60 40 25°C Tc = 75°C 20 0 –25°C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK2529 Static Drain to Source on State Resistance vs. Drain Current 0.6 Pulse Test 0.8 I D = 50 A 0.4 Drain to Source On State Resistance R DS(on) ( Ω ) V DS(on) (V) 1.0 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Pulse Test 0.2 0.1 0.05 0.02 VGS = 4 V 0.01 0.005 0.2 20 A 10 A 10 V 0.002 0.001 0.0005 6 2 4 Gate to Source Voltage Static Drain to Source on State Resistance R DS(on) ( Ω) Static Drain to Source on State Resistance vs. Temperature 0.04 Pulse Test 0.032 0.024 I D = 50 A 10, 20 A 0.016 V GS = 4 V 0.008 10, 20, 50 A 10 V 0 –40 1 8 10 V GS (V) 0 40 80 120 160 Case Temperature Tc (°C) 3 10 30 100 300 Drain Current I D (A) 1000 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 0 500 200 V DS = 10 V Pulse Test 100 50 Tc = –25 °C 20 25 °C 10 5 75 °C 2 1 0.5 0.1 0.3 1 3 10 30 100 Drain Current I D (A) 5 2SK2529 Typical Capacitance vs. Drain to Source Voltage 5000 10000 2000 5000 Capacitance C (pF) Reverse Recovery Time trr (ns) Body to Drain Diode Reverse Recovery Time 1000 500 200 100 50 5 0.1 12 V GS 40 V DD = 50 V 25 V 10 V 40 80 120 160 Gate Charge Qg (nc) 30 40 50 8 4 0 200 V GS (V) 5000 2000 Switching Time t (ns) V DS 20 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Drain to Source Voltage 6 16 V DD = 10 V 25 V 50 V 10 Switching Characteristics 20 I D = 50 A VGS = 0 f = 1 MHz 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 80 0 500 100 Dynamic Input Characteristics 20 Coss 1000 200 di / dt = 50 A / µs V GS = 0, Ta = 25 °C 10 60 2000 Crss 20 100 Ciss 1000 t d(off) 500 tf 200 tr 100 t d(on) 50 20 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 10 5 0.1 0.3 1 3 Drain Current 10 30 I D (A) 100 2SK2529 Reverse Drain Current vs. Source to Drain Voltage Maximun Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) Pulse Test 80 10 V 60 5V V GS = 0, –5 V 40 20 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 200 I AP = 45 A V DD = 25 V duty < 0.1 % Rg > 50 Ω 160 120 2.0 V SD (V) 80 40 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Reverse Drain Current I DR (A) 100 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.01 10 µ 0.2 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.57 °C/W, Tc = 25 °C 0.1 0.05 PDM 0.02 1 0.0 t ho lse PW T PW pu T 1s 100 µ D= 1m 10 m Pulse Width 100 m 1 10 PW (S) 7 2SK2529 Avalanche Test Circuit and Waveform EAR = L V DS Monitor 1 2 • L • I AP • 2 VDSS VDSS – V DD I AP Monitor V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50Ω 0 VDD Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50Ω V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf Unit: mm 2.54 2.54 15.0 ± 0.3 4.5 ± 0.3 2.7 ± 0.2 2.5 ± 0.2 13.60 ± 1.0 0.6 ± 0.1 4.1 ± 0.3 1.0 ± 0.2 1.15 ± 0.2 φ 3.2 ± 0.2 12.0 ± 0.3 10.0 ± 0.3 0.7 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220CFM — — 1.9 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.