2SK3274(L), 2SK3274(S) Slilicon N Channel MOS FET High Speed Power Switching ADE-208-960 (Z) 1st. Edition Mar. 2001 Features • • • • Low on-resistance R DS(on) = 10 m typ. 4.5 V gate drive device High speed switching External View DPAK-2 4 4 D 2 1 2 G 1 3 S 1 2 3 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3274(L), 2SK3274(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 30 A 1 Drain peak current I D (pulse)* 120 A Body-drain diode reverse drain current I DR 30 A Avalanche current I AP * 3 20 A 40 mJ 30 W Avalanche energy EAR* 3 2 Channel dissipation Pch* Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C: Rg ≥ 50 Ω 2 2SK3274(L), 2SK3274(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unijt Test conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 10 mA, VGS = 0 Gate to source leak current I GSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Zero gate voltage drain current I DSS — — 10 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 — 3.0 V VDS = 10 V, ID = 1 mA*1 Forward transfer admittance |yfs| 18 30 — S I D = 15 A, VDS = 10 V*1 Static drain to source on state RDS(on) — 10 13 mΩ I D = 15 A, VGS = 10 V*1 resistance RDS(on) — 20 30 mΩ I D = 15 A, VGS = 4.5 V*1 Input capacitance Ciss — 1500 — pF VDS = 10 V Output capacitance Coss — 500 — pF VGS = 0 Reverse transfer capacitance Crss — 250 — pF f = 1 MHz Total gate charge Qg — 27 — nc VDD = 10 V Gate to source charge Qgs — 6 — nc VGS = 10 V Gate to drain charge Qgd — 5 — nc I D = 30 A Turn-on delay time td(on) — 22 — ns VGS = 10 V Rise time tr — 170 — ns I D = 15 A Turn-off delay time td(off) — 110 — ns RL = 2 Ω Fall time tf — 145 — ns Body-drain diode forward voltage VDF — 1.0 — V I F = 30 A, VGS = 0 Body-drain diode reverse recovery time trr — 35 — ns I F = 30 A, VGS = 0 diF/dt = 50 A/µs Note: 1. Pulse test 3 2SK3274(L), 2SK3274(S) Power vs. Temperature Derating 10 ID (A) 100 30 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 200 40 20 10 10 50 DC 20 PW 1m µs s s =1 0m Op era s( tio 10 0µ n( Tc 5 1s =2 ho t) 5° C) 2 Operation in this area is 1 limited by RDS(on) 0.5 Ta = 25°C 0.2 0 50 100 150 Case Temperature 200 1 Tc (°C) 6V Pulse Test ID (A) 4V 10 V GS = 3.5 V 0 4 V DS = 10 V 4.5 V 5V 30 20 50 Drain Current ID (A) Drain Current 40 2 4 6 Drain to Source Voltage 50 100 VDS (V) Typical Transfer Characteristics Typical Output Characteristics 50 10 V 2 5 10 20 Drain to Source Voltage Pulse Test 40 30 20 Tc = 75°C 10 25°C -25°C 8 10 VDS (V) 0 2 4 6 Gate to Source Voltage 8 10 VGS (V) 2SK3274(L), 2SK3274(S) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS(on) (V) 1.0 Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 0.6 0.4 VGS = 4 V 0.02 0.01 10 V 0.005 I D = 20 A 0.2 0.05 10 A 0.002 5A Pulse Test 0.001 12 4 8 Gate to Source Voltage 16 20 VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 0.06 0.04 V GS = 4 V 5, 10, 20 A 0.02 0 -40 10 V 0 40 80 120 Case Temperature Tc (°C) 160 0.1 0.2 0.5 1 2 Drain Current 5 10 20 50 ID (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) 0 50 20 Tc = -25°C 25°C 10 75°C 5 2 V DS = 10 V Pulse Test 1 0.5 0.1 0.3 1 3 Drain Current 10 30 100 ID (A) 5 2SK3274(L), 2SK3274(S) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 di / dt = 50 A / µs V GS = 0, Ta = 25°C 500 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 20 Ciss 1000 Coss 500 200 Crss 100 50 VGS = 0 f = 1 MHz 20 10 0.1 10 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics 16 V DD = 20 V 10 V 5V 30 20 V DS 8 V GS 10 0 V DD = 20 V 10 V 5V 8 16 Gate Charge 6 12 24 32 Qg (nc) 4 0 40 1000 300 Switching Time t (ns) 40 VGS (V) I D = 30 A 40 50 VDS (V) Switching Characteristics 20 Gate to Emitter Voltage Drain to Source Voltage VDS (V) 50 10 20 30 Drain to Source Voltage t d(off) 100 tf 30 tr 10 t d(on) 3 1 0.1 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 2SK3274(L), 2SK3274(S) EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage IF (A) 50 Pulse Test 40 30 Repetitive Avalanche Energy Reverse Drain Current 10 V 5V 20 V GS = 0, -5 V 10 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 Maximum Avalanche Energy vs. Channel Temperature Derating 40 I AP = 20 A V DD = 15 V duty < 0.1 % Rg > 50 Ω 32 24 16 8 0 25 50 VSDF (V) 100 Channel Temperature Avalanche Test Circuit V DS Monitor 75 125 150 Tch (°C) Avalanche Waveform EAR = L 1 2 L I AP I AP Monitor 2 VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50Ω 0 VDD 7 2SK3274(L), 2SK3274(S) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 0.05 0.1 θ ch - c(t) = γ s (t) θch - c θ ch - c = 4.17°C/W, Tc = 25°C 0.02 1 0.0 0.03 t ho lse PDM Pu D= 1s PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m Pulse Width PW (S) 1 Switching Time Test Circuit 10 Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50Ω V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK3274(L), 2SK3274(S) Package Dimensions As of January, 2001 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 3.1 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(2) — — 0.42 g 9 2SK3274(L), 2SK3274(S) As of January, 2001 2.3 ± 0.2 0.55 ± 0.1 (4.9) (5.3) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.7 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(1),(2) — Conforms 0.28 g 2SK3274(L), 2SK3274(S) As of January, 2001 (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) (0.1) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(3) — Conforms 0.28 g 11 2SK3274(L), 2SK3274(S) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12