ETC 2SK3274(L)|2SK3274(S)

2SK3274(L), 2SK3274(S)
Slilicon N Channel MOS FET
High Speed Power Switching
ADE-208-960 (Z)
1st. Edition
Mar. 2001
Features
•
•
•
•
Low on-resistance
R DS(on) = 10 m typ.
4.5 V gate drive device
High speed switching
External View
DPAK-2
4
4
D
2
1 2
G
1
3
S
1 2
3
3
1. Gate
2. Drain
3. Source
4. Drain
2SK3274(L), 2SK3274(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
30
A
1
Drain peak current
I D (pulse)*
120
A
Body-drain diode reverse drain
current
I DR
30
A
Avalanche current
I AP * 3
20
A
40
mJ
30
W
Avalanche energy
EAR*
3
2
Channel dissipation
Pch*
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C: Rg ≥ 50 Ω
2
2SK3274(L), 2SK3274(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unijt
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
±0.1
µA
VGS = ±20 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
3.0
V
VDS = 10 V, ID = 1 mA*1
Forward transfer admittance
|yfs|
18
30
—
S
I D = 15 A, VDS = 10 V*1
Static drain to source on state
RDS(on)
—
10
13
mΩ
I D = 15 A, VGS = 10 V*1
resistance
RDS(on)
—
20
30
mΩ
I D = 15 A, VGS = 4.5 V*1
Input capacitance
Ciss
—
1500
—
pF
VDS = 10 V
Output capacitance
Coss
—
500
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
250
—
pF
f = 1 MHz
Total gate charge
Qg
—
27
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
6
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
5
—
nc
I D = 30 A
Turn-on delay time
td(on)
—
22
—
ns
VGS = 10 V
Rise time
tr
—
170
—
ns
I D = 15 A
Turn-off delay time
td(off)
—
110
—
ns
RL = 2 Ω
Fall time
tf
—
145
—
ns
Body-drain diode forward
voltage
VDF
—
1.0
—
V
I F = 30 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
35
—
ns
I F = 30 A, VGS = 0
diF/dt = 50 A/µs
Note:
1. Pulse test
3
2SK3274(L), 2SK3274(S)
Power vs. Temperature Derating
10
ID (A)
100
30
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
200
40
20
10
10
50
DC
20
PW
1m
µs
s
s
=1
0m
Op
era
s(
tio
10
0µ
n(
Tc
5
1s
=2
ho
t)
5°
C)
2 Operation in
this area is
1 limited by RDS(on)
0.5
Ta = 25°C
0.2
0
50
100
150
Case Temperature
200
1
Tc (°C)
6V
Pulse Test
ID (A)
4V
10
V GS = 3.5 V
0
4
V DS = 10 V
4.5 V
5V
30
20
50
Drain Current
ID (A)
Drain Current
40
2
4
6
Drain to Source Voltage
50 100
VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
50
10 V
2
5
10 20
Drain to Source Voltage
Pulse Test
40
30
20
Tc = 75°C
10
25°C
-25°C
8
10
VDS (V)
0
2
4
6
Gate to Source Voltage
8
10
VGS (V)
2SK3274(L), 2SK3274(S)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage
VDS(on) (V)
1.0
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
0.8
0.6
0.4
VGS = 4 V
0.02
0.01
10 V
0.005
I D = 20 A
0.2
0.05
10 A
0.002
5A
Pulse Test
0.001
12
4
8
Gate to Source Voltage
16
20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
0.04
V GS = 4 V
5, 10, 20 A
0.02
0
-40
10 V
0
40
80
120
Case Temperature Tc (°C)
160
0.1 0.2
0.5
1
2
Drain Current
5
10 20
50
ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
0
50
20
Tc = -25°C
25°C
10
75°C
5
2
V DS = 10 V
Pulse Test
1
0.5
0.1
0.3
1
3
Drain Current
10
30
100
ID (A)
5
2SK3274(L), 2SK3274(S)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
5000
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
500
2000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
20
Ciss
1000
Coss
500
200
Crss
100
50
VGS = 0
f = 1 MHz
20
10
0.1
10
0
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
16
V DD = 20 V
10 V
5V
30
20
V DS
8
V GS
10
0
V DD = 20 V
10 V
5V
8
16
Gate Charge
6
12
24
32
Qg (nc)
4
0
40
1000
300
Switching Time t (ns)
40
VGS (V)
I D = 30 A
40
50
VDS (V)
Switching Characteristics
20
Gate to Emitter Voltage
Drain to Source Voltage
VDS (V)
50
10
20
30
Drain to Source Voltage
t d(off)
100
tf
30
tr
10
t d(on)
3
1
0.1
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
0.3
1
3
Drain Current
10
30
ID (A)
100
2SK3274(L), 2SK3274(S)
EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
IF (A)
50
Pulse Test
40
30
Repetitive Avalanche Energy
Reverse Drain Current
10 V
5V
20
V GS = 0, -5 V
10
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
Maximum Avalanche Energy vs.
Channel Temperature Derating
40
I AP = 20 A
V DD = 15 V
duty < 0.1 %
Rg > 50 Ω
32
24
16
8
0
25
50
VSDF (V)
100
Channel Temperature
Avalanche Test Circuit
V DS
Monitor
75
125
150
Tch (°C)
Avalanche Waveform
EAR =
L
1
2
L I AP
I AP
Monitor
2
VDSS
VDSS - V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
7
2SK3274(L), 2SK3274(S)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.05
0.1
θ ch - c(t) = γ s (t) θch - c
θ ch - c = 4.17°C/W, Tc = 25°C
0.02
1
0.0
0.03
t
ho
lse
PDM
Pu
D=
1s
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
Pulse Width PW (S)
1
Switching Time Test Circuit
10
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
2SK3274(L), 2SK3274(S)
Package Dimensions
As of January, 2001
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
4.7 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
3.1 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (L)-(2)
—
—
0.42 g
9
2SK3274(L), 2SK3274(S)
As of January, 2001
2.3 ± 0.2
0.55 ± 0.1
(4.9)
(5.3)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.7 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
DPAK (S)-(1),(2)
—
Conforms
0.28 g
2SK3274(L), 2SK3274(S)
As of January, 2001
(0.1)
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
(0.1)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (S)-(3)
—
Conforms
0.28 g
11
2SK3274(L), 2SK3274(S)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
http://www.hitachi-eu.com/hel/ecg
http://sicapac.hitachi-asia.com
http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
12