HITACHI 2SK2726

2SK2726
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-453 B
3rd. Edition
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Avalanche ratings
Outline
TO–220CFM
D
G
1 2
S
3
1. Gate
2. Drain
3. Source
2SK2726
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
7
A
28
A
7
A
7
A
2.7
mJ
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP *
3
EAR*
3
2
1
Channel dissipation
Pch*
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2
2SK2726
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
500
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25V, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
10
µA
VDS = 500 V, VGS = 0
Gate to source cutoff voltage VGS(off)
2.5
—
3.5
V
I D = 1mA, VDS = 10V*1
Static drain to source on state RDS(on)
resistance
—
0.75
0.95
Ω
I D = 4A, VGS = 10V*1
Forward transfer admittance
|yfs|
3.5
6.0
—
S
I D = 4A, VDS = 10V*1
Input capacitance
Ciss
—
1100
—
pF
VDS = 10V
Output capacitance
Coss
—
330
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
65
—
pF
f = 1MHz
Total gate charge
Qg
—
21
—
nc
VDD = 400V
Gate to source charge
Qgs
—
5
—
nc
VGS = 10V
Gate to drain charge
Qgd
—
8
—
nc
I D = 7A
Turn-on delay time
t d(on)
—
20
—
ns
VGS = 10V, ID = 4A
Rise time
tr
—
65
—
ns
RL = 7.5Ω
Turn-off delay time
t d(off)
—
60
—
ns
Fall time
tf
—
40
—
ns
Body to drain diode forward
voltage
VDF
—
0.95
—
V
I D = 7A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
260
—
ns
I F = 7A, VGS = 0
diF/ dt = 100A/µs
Note:
1. Pulse test
3
2SK2726
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
I D (A)
30
30
20
10
3
1
Operation in
this area is
limited by R DS(on)
0.3
0.1
=
25
°C
)
0.03
0
50
100
150
Case Temperature
Ta = 25 °C
200
1
Tc (°C)
10 V
6V
10
Pulse Test
V DS = 10 V
Pulse Test
4
4.5 V
2
Drain Current
5V
6
ID
(A)
8
30
3
10
100 300 1000
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
Typical Output Characteristics
10
I D (A)
10
PW
0.01
Drain Current
10
µs
0
µ
s
1
m
=
s
DC
10
Op
ms
er
(1
at
sh
ion
ot)
(T
c
10
Drain Current
Channel Dissipation
Pch (W)
40
8
6
4
Tc = 75°C
–25°C
2
25°C
VGS = 4 V
0
4
10
20
30
Drain to Source Voltage
40
50
V DS (V)
0
2
4
6
Gate to Source Voltage
8
10
V GS (V)
2SK2726
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
16
12
8
ID=7A
5A
4
2A
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0
12
4
8
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
5
Pulse Test
4
3
ID=7A 5A
2
V GS = 10 V
1
0
–40
5
Drain to Source On State Resistance
R DS(on) ( Ω )
Pulse Test
2A
0
40
80
120
160
Case Temperature Tc (°C)
Pulse Test
2
1
VGS = 10, 15 V
0.5
0.2
0.1
0.1 0.2
5 10
0.5 1
2
Drain Current I D (A)
20
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
20
20
10
5
Tc = –25 °C
25 °C
2
1
75 °C
0.5
0.2
0.1 0.2
V DS = 10 V
Pulse Test
0.5 1
2
5 10
Drain Current I D (A)
20
5
2SK2726
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
10
0.1
200
100
Coss
50
20
10
di / dt = 100 A / µs
V GS = 0, Ta = 25 °C
20
Ciss
1000
500
2
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
12
V GS
200
100
ID=7A
V DD = 400 V
250 V
100 V
8
16
24
32
Gate Charge Qg (nc)
30
40
50
8
4
0
40
1000
Switching Time t (ns)
16
V GS (V)
V DD = 100 V
250 V
400 V
300
0
6
V DS
20
Switching Characteristics
20
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
400
10
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
500
Crss
VGS = 0
f = 1 MHz
5
300
100
30
t d(off)
tf
3
1
0.1
t d(on)
tr
10
V GS = 10 V, V DD = 30 V
PW = 10 µs, duty < 1 %
0.3
1
3
Drain Current
10
30
I D (A)
100
2SK2726
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
Repetive Avalanche Energy E AR (mJ)
Reverse Drain Current I DR (A)
10
8
6
5, 10 V
V GS = 0, –5 V
4
2
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
4.0
I AP = 7 A
V DD = 50 V
duty < 1 %
Rg > 50 Ω
3.2
2.4
1.6
0.8
0
25
50
Avalanche Test Circuit
V DS
Monitor
75
100
125
150
Channel Temperature Tch (°C)
V SD (V)
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
7
2SK2726
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
0.0
0.03
D=
e
PW
uls
p
ot
T
h
1s
0.01
10 µ
PW
T
100 µ
1m
10 m
100 m
Pulse Width PW (S)
Switching Time Test Circuit
1
10
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
2SK2726
Package Dimensions
Unit: mm
1.0 ± 0.2
1.15 ± 0.2
2.54 ± 0.5
2.54 ± 0.5
2.5 ± 0.2
13.6 ± 1.0
4.45 ± 0.3
4.1 ± 0.3
0.6 ± 0.1
2.7 ± 0.2
15.0 ± 0.3
φ 3.2 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
0.7 ± 0.1
Hitachi Code TO–220CFM
—
EIAJ
—
JEDEC
9
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
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traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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