HITACHI 2SK2730

2SK2730
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-493 A (Z)
2nd. Edition
September 1997
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Avalanche ratings
Outline
TO–3P
D
G
1
S
2
3
1. Gate
2. Drain
(Flange)
3. Source
2SK2730
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
25
A
100
A
25
A
25
A
35
mJ
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP *
3
EAR*
3
2
1
Channel dissipation
Pch*
175
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2
2SK2730
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
500
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25V, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
10
µA
VDS = 500 V, VGS = 0
Gate to source cutoff voltage VGS(off)
2.5
—
3.5
V
I D = 1mA, VDS = 10V*1
Static drain to source on state RDS(on)
resistance
—
0.2
0.24
Ω
I D = 15A, VGS = 10V*1
Forward transfer admittance
|yfs|
12
20
—
S
I D = 15A, VDS = 10V*1
Input capacitance
Ciss
—
3500
—
pF
VDS = 10V
Output capacitance
Coss
—
1000
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
150
—
pF
f = 1MHz
Total gate charge
Qg
—
65
—
nc
VDD = 400V
Gate to source charge
Qgs
—
16
—
nc
VGS = 10V
Gate to drain charge
Qgd
—
24
—
nc
I D = 25A
Turn-on delay time
t d(on)
—
50
—
ns
VGS = 10V, ID = 15A
Rise time
tr
—
140
—
ns
RL = 2Ω
Turn-off delay time
t d(off)
—
200
—
ns
Fall time
tf
—
110
—
ns
Body to drain diode forward
voltage
VDF
—
1.1
—
V
I D = 25A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
450
—
ns
I F = 25A, VGS = 0
diF/ dt = 100A/µs
Note:
1. Pulse test
3
2SK2730
Main Characteristics
150
200
100
50
I D (A)
500
100
50
Maximum Safe Operation Area
PW
20
10
5
Drain Current
Channel Dissipation
Pch (W)
Power vs. Temperature Derating
200
DC
er
2
1
0.5
50
100
150
Case Temperature
200
Tc (°C)
Pulse Test
(A)
20
5.5 V
10
5V
ID
6V
1s
ho
t)
(T
c=
25
°C
)
30
3
10
100 300 1000
Drain to Source Voltage V DS (V)
V DS = 10 V
Pulse Test
6.5 V
30
ion
50
Drain Current
I D (A)
Drain Current
40
s(
Typical Transfer Characteristics
Typical Output Characteristics
8V
m
Ta = 25 °C
1
50
10 V
10
at
Operation in
this area is
limited by R DS(on)
0.2
0.1
0.05
0
Op
=
10
µ
1m s
s
10
0µ
s
40
30
20
10
25°C
Tc = 75°C
–25°C
VGS = 4.5 V
0
4
10
20
30
Drain to Source Voltage
40
50
V DS (V)
0
2
4
6
Gate to Source Voltage
8
10
V GS (V)
2SK2730
8
I D = 25 A
6
20 A
4
10 A
2
5A
0
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Pulse Test
12
4
8
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Temperature
1.0
Pulse Test
0.8
20 A
0.6
I D = 25 A
0.4
V GS = 10 V
10 A
5A
0.2
0
–40
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
VGS = 10 V
0.2
15 V
0.1
16
20
V GS (V)
0
40
80
120
160
Case Temperature Tc (°C)
1
2
5
10
20
50
Drain Current I D (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
10
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
20
Tc = –25 °C
25 °C
10
5
75 °C
2
1
0.5
0.2
0.1
0.1 0.2
V DS = 10 V
Pulse Test
2
0.5 1
5 10 20
Drain Current I D (A)
50
5
2SK2730
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
0.1
100
0
6
100
50
V DD = 100 V
250 V
400 V
ID = 25 A
V DD = 400 V
250 V
100 V
40
80
120
160
Gate Charge Qg (nc)
16
12
8
4
0
200
10
20
30
40
50
Drain to Source Voltage V DS (V)
1000
V GS (V)
VGS
Crss
VGS = 0
f = 1 MHz
0
Switching Characteristics
500
Switching Time t (ns)
200
200
5
20
VDS
Coss
500
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
300
1000
10
Dynamic Input Characteristics
400
2000
20
di / dt = 100 A / µs
V GS = 0, Ta = 25 °C
500
Ciss
t d(off)
200
tf
100
tr
t d(on)
50
20
10
0.1
V GS = 10 V, V DD = 30 V
PW = 10 µs, duty < 1 %
0.3
1
3
Drain Current
10
30
I D (A)
100
2SK2730
Maximun Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
Repetive Avalanche Energy E AR (mJ)
40
30
5, 10 V
V GS = 0 V
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
50
I AP = 25 A
V DD = 50 V
duty < 0.1 %
Rg > 50 Ω
40
30
20
10
2.0
V SD (V)
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ s (t)
Reverse Drain Current I DR (A)
50
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.01
10 µ
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.71 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
100 µ
D=
PW
T
PW
T
1m
10 m
Pulse Width
100 m
1
10
PW (S)
7
2SK2730
Avalanche Test Circuit
Avalanche Waveform
L
V DS
Monitor
1
2
• L • I AP •
2
EAR =
VDSS
VDSS – V DD
I AP
Monitor
V (BR)DSS
I AP
Rg
V DS
VDD
D. U. T
ID
Vin
15 V
50Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
2SK2730
Package Dimensions
Unit: mm
5.0 ± 0.3
5.0 max
0.3 typ
1.5 typ
20.1 max
2.0 typ
0.5 typ
16.0 max
14.9 ± 0.2
1.0 typ
φ 3.2 ± 0.2
1.4 max
2.0 typ
1.0 ± 0.2
3.6 typ
5.45 ± 0.2
18.0 ± 0.5
1.6 typ
2.8 typ
0.6 ± 0.2
0.9 typ
1.0 typ
5.45 ± 0.2
Hitachi Code
EIAJ
JEDEC
TO–3P
SC–65
—
9
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.