HITACHI 2SK2800

2SK2800
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-513G (Z)
8th. Edition
Jun 1998
Features
• Low on-resistance
R DS(on) = 15 mΩ typ.
• High speed switching
• Low drive current
• 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1
2
S
3
1. Gate
2. Drain (Flange)
3. Source
2SK2800
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
40
A
160
A
40
A
40
A
137
mJ
50
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP
Note1
Note 3
EAR
Note 3
Note 2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2SK2800
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
60
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
I D = 1mA, VDS = 10V
Static drain to source on state
RDS(on)
—
15
20
mΩ
I D = 20A, VGS = 10V Note4
resistance
RDS(on)
—
25
40
mΩ
I D = 20A, VGS = 4V Note4
Forward transfer admittance
|yfs|
20
35
—
S
I D = 20A, VDS = 10V Note4
Input capacitance
Ciss
—
1500
—
pF
VDS = 10V
Output capacitance
Coss
—
720
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
200
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
20
—
ns
I D = 20A, RL = 1.5Ω
Rise time
tr
—
180
—
ns
VGS = 10V
Turn-off delay time
t d(off)
—
200
—
ns
Fall time
tf
—
200
—
ns
Body–drain diode forward voltage
VDF
—
0.95
—
V
I F = 40A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
70
—
V
I F = 40A, VGS = 0
diF/ dt =50A/µs
Note:
4. Pulse test
3
2SK2800
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
1000
I D (A)
75
Drain Current
Channel Dissipation
Pch (W)
300
50
25
10
1
50
100
150
0.1
0.1
200
s(
Op
era
1s
ho
n(
Operation in
this area is
limited by R DS(on)
Tc
=2
t)
5°
C)
10 V
6V
4.5 V
4V
Pulse Test
Drain Current
30
3.5 V
20
10
VGS = 3 V
0
3
0.3
1
10
Drain to Source Voltage V
30
(V)
DS
100
50
I D (A)
40
Ta = 25 °C
Typical Transfer Characteristics
Typical Output Characteristics
50
I D (A)
s
0m
tio
Case Temperature Tc (°C)
Drain Current
DC
1m
=1
µs
s
0.3
0
4
0µ
PW
30
3
10
10
100
2
4
6
Drain to Source Voltage V
8
DS(V)
10
40
30
V DS = 10 V
Pulse Test
Tc = 75°C
25°C
20
–25°C
10
0
1
2
3
Gate to Source Voltage V
4
(V)
GS
5
2SK2800
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
1.6
1.2
Drain to Source On State Resistance
R DS(on) ( W)
Drain to Source Saturation Voltage
V DS(on) (V)
2.0
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
I D = 50 A
0.8
VGS = 4 V
0.02
0.4
20 A
10 V
0.01
10 A
0.005
12
4
8
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.05
Pulse Test
0.04
0.03
I D = 20 A
V GS = 4 V
0.02
10 A
50 A
10, 20 A
0.01
0
–40
10 V
0
40
80
120
160
Case Temperature Tc (°C)
1
2
10 20
50
5
Drain Current I D (A)
100
Forward Transfer Admittance vs.
Drain Current
100
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance
R DS(on) ( W)
0
Tc = –25 °C
50
25 °C
20
75 °C
10
5
2
V DS = 10 V
Pulse Test
1
1
2
10 20
50
5
Drain Current I D (A)
100
5
2SK2800
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
5000
VGS = 0
f = 1 MHz
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
0.1
2000
Ciss
1000
500
Coss
200
Crss
100
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
50
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
V GS
40
20
0
6
V DS
12
8
V DD = 50 V
25 V
10 V
8
16
24
32
Gate Charge Qg (nc)
40
50
4
0
40
V GS (V)
1000
Switching Time t (ns)
60
V DD = 10 V
25 V
50 V
16
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
80
30
Switching Characteristics
20
I D = 40 A
20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
10
300
t d(off)
100
tf
tr
30
t d(on)
10
3
1
0.1
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
0.3
1
3
Drain Current
10
30
I D (A)
100
2SK2800
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current I DR (A)
50
40
10 V
30
5V
V GS = 0, –5 V
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
200
I AP = 40 A
V DD = 25 V
duty < 1 %
Rg > 50 W
160
120
80
40
0
25
50
100
125
150
Channel Temperature Tch (°C)
V SD (V)
Avalanche Test Circuit
V DS
Monitor
75
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50W
0
VDD
7
2SK2800
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
g s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
q ch – c(t) = g s (t) • q ch – c
q ch – c = 2.5 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.03
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50W
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
2SK2800
Package Dimensions
Unit: mm
9.5
+ 0.1
4.44±0.2
f 3.6 – 0.08
8.0
1.26±0.15
18.5 ±0.5
15.0 ±0.3
6.4 – 0.1
+ 0.2
2.79 ±0.2
1.27
10.16±0.2
1.27±0.1
1.5 max
7.8 ±0.5
0.76 ±0.1
2.54 ±0.5
2.54 ±0.5
14.0 ±0.5
1.2±0.1
0.5±0.1
2.7 max
Hitachi Code
EIAJ
JEDEC
TO–220AB
SC–46
—
9
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contact Hitachi’s sales office before using the product in an application that demands especially high
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