HITACHI 2SJ531

2SJ531
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-646A (Z)
2nd. Edition
Jun 1998
Features
• Low on-resistance
R DS(on) = 0.050Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
TO–220CFM
D
G
1 2
S
3
1. Gate
2. Drain
3. Source
2SJ531
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–18
A
–72
A
–18
A
–18
A
27
mJ
30
W
Drain peak current
I D(pulse)
Note1
Body-drain diode reverse drain current I DR
Avalanche current
I AP
Avalanche energy
Note3
EAR
Note3
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
–60
—
—
V
I D = –10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain current
I DSS
—
—
–10
µA
VDS = –60 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.0
V
I D = –1mA, VDS = –10V
Static drain to source on state
RDS(on)
—
0.050
0.065
Ω
I D = –9A, VGS = –10V Note4
resistance
RDS(on)
—
0.070
0.110
Ω
I D = –9A, VGS = –4V Note4
Forward transfer admittance
|yfs|
10
16
—
S
I D = –9A, VDS = -10V Note4
Input capacitance
Ciss
—
1300
—
pF
VDS = –10V
Output capacitance
Coss
—
650
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
180
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
14
—
ns
VGS = –10V, I D = –9A
Rise time
tr
—
95
—
ns
RL =3.33Ω
Turn-off delay time
t d(off)
—
190
—
ns
Fall time
tf
—
135
—
ns
Body–drain diode forward voltage VDF
—
–1.0
—
V
I F = –18A, VGS = 0
Body–drain diode reverse
recovery time
—
70
—
ns
I F = –18A, VGS = 0
diF/ dt =50A/µs
Note:
2
Symbol
4. Pulse test
t rr
2SJ531
Main Characteristics
Power vs. Temperature Derating
1000
I D (A)
Drain Current
30
20
10
50
100
150
Case Temperature
–20
–3 V
–12
–8
–2.5 V
–4
PW
30
DC
10
3
1
Op
er
10
=
10
1
ms
0µ
m
s
s
(1
sh
ot
)
(T
Operation in
c=
2
this area is
5°
C)
limited by R DS(on)
at
ion
Typical Transfer Characteristics
Pulse Test
–3.5 V
10 µs
–20
V DS = –10 V
Pulse Test
ID
I D (A)
–16
Tc (°C)
Typical Output Characteristics
–10 V –6 V
–4 V
Drain Current
100
0.1 Ta = 25 °C
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V DS (V)
200
(A)
0
Maximum Safe Operation Area
300
0.3
Drain Current
Channel Dissipation
Pch (W)
40
–16
–12
–8
25°C
Tc = 75°C
–25°C
–4
VGS = –2 V
0
–2
–4
–6
Drain to Source Voltage
–8
–10
V DS (V)
0
–1
–2
–3
Gate to Source Voltage
–4
–5
V GS (V)
3
2SJ531
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
–1.5
Static Drain to Source on State Resistance
R DS(on) ( Ω)
I D = –20 A
–1.0
–10 A
–5 A
–0.5
–12
–4
–8
Gate to Source Voltage
–16
–20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.30
Pulse Test
0.25
0.20
I D = –20 A
0.15
0.10
–5, –10 A
VGS = –4 V
0.05
–5, –10, –20 A
–10 V
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
Drain to Source On State Resistance
R DS(on) ( Ω )
–2.5
0
4
Pulse Test
0.2
0.1
VGS = –4 V
0.05
–10 V
0.02
0.01
–1
–2
–5 –10 –20
–50 –100
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
100
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
–3.0
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
30
Tc = –25 °C
10
25 °C
3
75 °C
1
0.3
V DS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1
–3
–10 –30
Drain Current I D (A)
–100
2SJ531
Body–Drain Diode Reverse
Recovery Time
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
–2
Ciss
1000
100
10
0
–80
–100
0
V DS
–8
–12
V DD = –50 V
–25 V
–10 V
–16
I D = –18 A
16
32
Gate Charge
48
64
Qg (nc)
–30
–40
–50
–20
80
V GS (V)
1000
V GS = –10 V, V DD = –30 V
500 PW = 5 µs, duty < 1 %
Switching Time t (ns)
–60
V GS
–4
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
–40
–20
Switching Characteristics
0
–20
–10
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DD = –10 V
–25 V
–50 V
Crss
30
I DR (A)
0
Coss
300
–5 –10 –20
Reverse Drain Current
VGS = 0
f = 1 MHz
3000
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
10
–0.1 –0.2 –0.5 –1
Typical Capacitance vs.
Drain to Source Voltage
t d(off)
200
tf
100
50
tr
t d(on)
20
10
–0.1 –0.2 –0.5 –1
–2
Drain Current
–5 –10 –20
I D (A)
5
2SJ531
–10 V
–16
–5 V
V GS = 0, 5 V
–12
–8
–4
Pulse Test
0
–0.4
–0.8
–1.2
Source to Drain Voltage
–1.6
–2.0
Repetitive Avalanche Energy EAR (mJ)
–20
Reverse Drain Current I DR (A)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
50
I AP = –18 A
V DD = –25 V
duty < 0.1 %
Rg > 50 Ω
40
30
20
10
0
25
V SD (V)
50
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
V DS
Monitor
75
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
–15 V
50Ω
0
6
VDD
2SJ531
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17°C/W, Tc = 25°C
0.1
0.05
0.03
0.01
10 µ
PDM
D=
0.02
e
1
uls
0.0
tp
o
h
1s
PW
T
PW
T
100 µ
1m
10 m
100 m
Pulse Width PW (S)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
1
10
Waveform
Vin
10%
D.U.T.
RL
90%
Vin
–10 V 50Ω
V DD
= –30 V
90%
90%
Vout
td(on)
10%
10%
tr
td(off)
tf
7
2SJ531
Package Dimensions
Unit: mm
1.0 ± 0.2
1.15 ± 0.2
2.54 ± 0.5
2.54 ± 0.5
2.5 ± 0.2
13.6 ± 1.0
4.5 ± 0.3
4.1 ± 0.3
0.6 ± 0.1
2.7 ± 0.2
15.0 ± 0.3
φ 3.2 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
0.7 ± 0.1
Hitachi Code TO–220CFM
—
EIAJ
—
JEDEC
8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.