Low Noise, High Speed Amplifier for 16-Bit Systems AD8021 FEATURES Low Noise 2.1 nV/√Hz Input Voltage Noise 2.1 pA/√Hz Input Current Noise Custom Compensation Constant Bandwidth from G = –1 to G = –10 High Speed 200 MHz (G = –1) 190 MHz (G = –10) Low Power 34 mW or 6.7 mA Typ for 5 V Supply Output Disable Feature, 1.3 mA Low Distortion –93 dB Second Harmonic, fC = 1 MHz –108 dB Third Harmonic, fC = 1 MHz DC Precision 1 mV Max Input Offset Voltage 0.5 V/C Input Offset Voltage Drift Wide Supply Range, 5 V to 24 V Low Price Small Packaging Available in SOIC-8 and MSOP-8 APPLICATIONS ADC Preamp and Driver Instrumentation Preamp Active Filters Portable Instrumentation Line Receivers Precision Instruments Ultrasound Signal Processing High Gain Circuits CONNECTION DIAGRAM SOIC-8 (R-8) MSOP-8 (RM-8) AD8021 LOGIC REFERENCE 1 8 DISABLE –IN 2 7 +VS +IN 3 6 VOUT –VS 4 5 CCOMP The AD8021 allows the user to choose the gain bandwidth product that best suits the application. With a single capacitor, the user can compensate the AD8021 for the desired gain with little trade-off in bandwidth. The AD8021 is a very well behaved amplifier that settles to 0.01% in 23 ns for a 1 V step. It has a fast overload recovery of 50 ns. The AD8021 is stable over temperature with low input offset voltage drift and input bias current drift, 0.5 µV/°C and 10 nA/°C, respectively. The AD8021 is also capable of driving a 75 Ω line with ± 3 V video signals. The AD8021 is not only technically superior, but also priced considerably less than comparable amps drawing much higher quiescent current. The AD8021 is a high speed, general-purpose amplifier, ideal for a wide variety of gain configurations, and can be used throughout a signal processing chain and in control loops. The AD8021 is available in both standard 8-lead SOIC and MSOP packages in the industrial temperature range of –40°C to +85°C. 24 VOUT = 50mV p-p 21 PRODUCT DESCRIPTION G = –10, RF = 1k, RG = 100, RIN = 100, C C = 0pF 18 CLOSED-LOOP GAIN – dB The AD8021 is a very high performance, high speed voltage feedback amplifier that can be used in 16-bit resolution systems. It is designed to have low voltage and current noise (2.1 nV/√Hz typ and 2.1 pA/√Hz typ) while operating at the lowest quiescent supply current (7 mA @ ± 5 V) among today’s high speed, low noise op amps. The AD8021 operates over a wide range of supply voltages from ± 2.5 V to ± 12 V, as well as from single 5 V supplies, making it ideal for high speed, low power instruments. An output disable pin allows further reduction of the quiescent supply current to 1.3 mA. 15 G = –5, RF = 1k, RG = 200, RIN = 66.5, C C = 1.5pF 12 9 6 G = –2, RF = 499, RG = 249, RIN = 63.4, C C = 4pF 3 0 G = –1, RF = 499, RG = 499, RIN = 56.2, C C = 7pF –3 –6 0.1M 1M 10M FREQUENCY – Hz 100M 1G Figure 1. Small Signal Frequency Response REV. D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved. AD8021–SPECIFICATIONS VS = 5 V (@ TA = 25C, VS = 5 V, RL = 1 k, Gain = +2, unless otherwise noted.) Parameter DYNAMIC PERFORMANCE –3 dB Small Signal Bandwidth Slew Rate, 1 V Step Settling Time to 0.01% Overload Recovery (50%) DISTORTION/NOISE PERFORMANCE f = 1 MHz HD2 HD3 f = 5 MHz HD2 HD3 Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error DC PERFORMANCE Input Offset Voltage Input Offset Voltage Drift Input Bias Current Input Bias Current Drift Input Offset Current Conditions Min G = +1, CC = 10 pF, VO = 0.05 V p-p G = +2, CC = 7 pF, VO = 0.05 V p-p G = +5, CC = 2 pF, VO = 0.05 V p-p G = +10, CC = 0 pF, VO = 0.05 V p-p G = +1, CC = 10 pF G = +2, CC = 7 pF G = +5, CC = 2 pF G = +10, CC = 0 pF VO = 1 V Step, RL = 500 Ω 355 160 150 110 95 120 250 380 AD8021AR/AD8021ARM Typ Max 490 205 185 150 120 150 300 420 23 MHz MHz MHz MHz V/µs V/µs V/µs V/µs ns ± 2.5 V Input Step, G = +2 50 ns VO = 2 V p-p VO = 2 V p-p –93 –108 dBc dBc VO = 2 V p-p VO = 2 V p-p f = 50 kHz f = 50 kHz NTSC, RL = 150 Ω –70 –80 2.1 2.1 0.03 dBc dBc nV/√Hz pA/√Hz % NTSC, RL = 150 Ω 0.4 0.5 7.5 10 0.1 82 DISABLE Voltage—Off/On Enabled Leakage Current Disabled Leakage Current POWER SUPPLY Operating Range Quiescent Current +Power Supply Rejection Ratio –Power Supply Rejection Ratio 1.0 10.5 0.5 mV µV/°C µA nA/°C ±µA dB 10 1 –4.1 to +4.6 MΩ pF V –86 –98 dB –3.5 to +3.2 –3.8 to +3.4 60 75 V mA mA VO = 50 mV p-p/1 V p-p 15/120 pF f = 10 MHz VO = 0 V to 2 V, 50% Logic to 50% Output VO = 0 V to 2 V, 50% Logic to 50% Output –40 45 50 dB ns ns VDISABLE – VLOGIC REFERENCE Logic Ref = 0.4 V DISABLE = 4.0 V Logic Ref = 0.4 V DISABLE = 0.4 V 1.75/1.90 70 2 30 33 V µA µA µA µA VCM = ± 4 V OUTPUT CHARACTERISTICS Output Voltage Swing Linear Output Current Short-Circuit Current DISABLE CHARACTERISTICS Off Isolation Turn-On Time Turn-Off Time Degrees 86 INPUT CHARACTERISTICS Input Resistance Common-Mode Input Capacitance Input Common-Mode Voltage Range Capacitive Load Drive for 30% Overshoot 2.6 0.04 TMIN to TMAX +Input or –Input Open-Loop Gain Common-Mode Rejection Ratio Unit ± 2.25 Output Enabled Output Disabled VCC = +4 V to +6 V, VEE = –5 V VCC = +5 V, VEE = –6 V to –4 V –86 –86 ±5 7.0 1.3 –95 –95 ± 12.0 7.7 1.6 V mA mA dB dB Specifications subject to change without notice. –2– REV. D AD8021 VS = ⴞ12 V(@ T = 25ⴗC, R = 1 k⍀, Gain = +2, unless otherwise noted.) A L Parameter DYNAMIC PERFORMANCE –3 dB Small Signal Bandwidth Slew Rate, 1 V Step Settling Time to 0.01% Overload Recovery (50%) DISTORTION/NOISE PERFORMANCE f = 1 MHz HD2 HD3 f = 5 MHz HD2 HD3 Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error DC PERFORMANCE Input Offset Voltage Input Offset Voltage Drift Input Bias Current Input Bias Current Drift Input Offset Current Open-Loop Gain INPUT CHARACTERISTICS Input Resistance Common-Mode Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio Conditions Min G = +1, CC = 10 pF, VO = 0.05 V p-p G = +2, CC = 7 pF, VO = 0.05 V p-p G = +5, CC = 2 pF, VO = 0.05 V p-p G = +10, CC = 0 pF, VO = 0.05 V p-p G = +1, CC = 10 pF G = +2, CC = 7 pF G = +5, CC = 2 pF G = +10, CC = 0 pF VO = 1 V Step, RL = 500 Ω ± 6 V Input Step, G = +2 520 175 170 125 105 140 265 400 Disabled Leakage Current POWER SUPPLY Operating Range Quiescent Current +Power Supply Rejection Ratio –Power Supply Rejection Ratio MHz MHz MHz MHz V/µs V/µs V/µs V/µs ns ns VO = 2 V p-p VO = 2 V p-p –95 –116 dBc dBc VO = 2 V p-p VO = 2 V p-p f = 50 kHz f = 50 kHz NTSC, RL = 150 Ω NTSC, RL = 150 Ω –71 –83 2.1 2.1 0.03 0.04 dBc dBc nV/√Hz pA/√Hz % Degrees VCM = ± 10 V 84 –86 10 1 –11.1 to +11.6 –96 MΩ pF V dB –10.6 to +10.2 70 115 15/120 V mA mA pF –40 45 50 1.80/1.95 70 2 30 33 dB ns ns V µA µA µA µA –10.2 to +9.8 f = 10 MHz VO = 0 V to 2 V, 50% Logic to 50% Output VO = 0 V to 2 V, 50% Logic to 50% Output VDISABLE – VLOGIC REFERENCE Logic Ref = 0.4 V DISABLE = 4.0 V Logic Ref = 0.4 V DISABLE= 0.4 V ± 2.25 Output Enabled Output Disabled VCC = +11 V to +13 V, VEE = –12 V VCC = +12 V, VEE = –13 V to –11 V –3– 2.6 0.4 0.2 8 10 0.1 88 TMIN to TMAX +Input or –Input Specifications subject to change without notice. REV. D Unit 560 220 200 165 130 170 340 460 21 90 OUTPUT CHARACTERISTICS Output Voltage Swing Linear Output Current Short-Circuit Current Capacitive Load Drive for 30% Overshoot VO = 50 mV p-p/1 V p-p DISABLE CHARACTERISTICS Off Isolation Turn-On Time Turn-Off Time DISABLE Voltage—Off/On Enabled Leakage Current AD8021AR/AD8021ARM Typ Max –86 –86 ±5 7.8 1.7 –96 –100 1.0 11.3 0.5 mV µV/°C µA nA/°C ±µA dB ± 12.0 V 8.6 mA 2.0 mA dB dB AD8021 VS = 5 V (@ T = 25C, R = 1 k, Gain = +2, unless otherwise noted.) A L Parameter DYNAMIC PERFORMANCE –3 dB Small Signal Bandwidth Slew Rate, 1 V Step Settling Time to 0.01% Overload Recovery (50%) DISTORTION/NOISE PERFORMANCE f = 1 MHz HD2 HD3 f = 5 MHz HD2 HD3 Input Voltage Noise Input Current Noise DC PERFORMANCE Input Offset Voltage Input Offset Voltage Drift Input Bias Current Input Bias Current Drift Input Offset Current Open-Loop Gain INPUT CHARACTERISTICS Input Resistance Common-Mode Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS Output Voltage Swing Linear Output Current Short-Circuit Current Capacitive Load Drive for 30% Overshoot DISABLE CHARACTERISTICS Off Isolation Turn-On Time Turn-Off Time DISABLE Voltage—Off/On Enabled Leakage Current Disabled Leakage Current POWER SUPPLY Operating Range Quiescent Current +Power Supply Rejection Ratio –Power Supply Rejection Ratio AD8021AR/AD8021ARM Min Typ Max Conditions G = +1, CC = 10 pF, VO = 0.05 V p-p G = +2, CC = 7 pF, VO = 0.05 V p-p G = +5, CC = 2 pF, VO = 0.05 V p-p G = +10, CC = 0 pF, VO = 0.05 V p-p G = +1, CC = 10 pF G = +2, CC = 7 pF G = +5, CC = 2 pF G = +10, CC = 0 pF VO = 1 V Step, RL = 500 Ω 0 V to 2.5 V Input Step, G = +2 270 155 135 95 80 110 210 290 Unit 305 190 165 130 110 140 280 390 28 40 MHz MHz MHz MHz V/µs V/µs V/µs V/µs ns ns VO = 2 V p-p VO = 2 V p-p –84 –91 dBc dBc VO = 2 V p-p VO = 2 V p-p f = 50 kHz f = 50 kHz –68 –81 2.1 2.1 dBc dBc nV/√Hz pA/√Hz 2.6 72 0.4 0.8 7.5 10 0.1 76 –84 10 1 0.9 to 4.6 –98 MΩ pF V dB VO = 50 mV p-p/1 V p-p 1.10 to 3.60 30 50 10/120 V mA mA pF f = 10 MHz VO = 0 V to 1 V, 50% Logic to 50% Output VO = 0 V to 1 V, 50% Logic to 50% Output VDISABLE – VLOGIC REFERENCE Logic Ref = 0.4 V DISABLE = 4.0 V Logic Ref = 0.4 V DISABLE = 0.4 V –40 45 50 1.55/1.70 70 2 30 33 dB ns ns V µA µA µA µA TMIN to TMAX +Input or –Input 1.5 V to 3.5 V 1.25 to 3.38 ± 2.25 Output Enabled Output Disabled VCC = 4.5 V to 5.5 V, VEE = 0 V VCC = +5 V, VEE = –0.5 V to +0.5 V –74 –76 ±5 6.7 1.2 –82 –84 1.0 10.3 0.5 mV µV/°C µA nA/°C ±µA dB ± 12.0 V 7.5 mA 1.5 mA dB dB Specifications subject to change without notice. –4– REV. 0 AD8021 ABSOLUTE MAXIMUM RATINGS 1 2.0 MAXIMUM POWER DISSIPATION (mW) Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26.4 V Power Dissipation . . . . . . . . Observed Power Derating Curves Input Voltage (Common-Mode) . . . . . . . . . . . . . . . ± VS ± 1 V Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . ± 0.8 V Differential Input Current . . . . . . . . . . . . . . . . . . . . . ± 10 mA Output Short-Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observed Power Derating Curves Storage Temperature . . . . . . . . . . . . . . . . . . –65∞C to +125∞C Operating Temperature Range . . . . . . . . . . . –40∞C to +85∞C Lead Temperature Range (Soldering, 10 sec) . . . . . . . . 300∞C NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 The AD8021 inputs are protected by diodes. Current-limiting resistors are not used in order to preserve the low noise. If a differential input exceeds ± 0.8 V, the input current should be limited to ± 10 mA. 1.5 8-LEAD SOIC 1.0 8-LEAD MSOP 0.5 0.01 –55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85 AMBIENT TEMPERATURE (ⴗC) Figure 2. Maximum Power Dissipation vs. Temperature* *Specification is for device in free air: 8-Lead SOIC: JA = 125∞C/W 8-Lead MSOP: JA = 145∞C/W MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by the AD8021 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150∞C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175∞C for an extended period can result in device failure. PIN FUNCTION DESCRIPTIONS Pin No. Mnemonic 1 2 3 4 5 While the AD8021 is internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (150∞C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves. 6 7 8 PIN CONFIGURATION LOGIC REFERENCE 1 AD8021 8 DISABLE –IN 2 7 +VS +IN 3 6 VOUT –VS 4 5 CCOMP Function LOGIC REFERENCE Reference for Pin 8* Voltage Level. Connect to logic low supply. –IN Inverting Input +IN Noninverting Input Negative Supply Voltage –VS Compensation Capacitor. Tie CCOMP to –VS. (See the Applications section for value.) Output VOUT Positive Supply Voltage +VS DISABLE Disable, Active Low* *When Pin 8 (DISABLE) is about 2 V or more higher than Pin 1 (LOGIC REFERENCE), the part is enabled. When Pin 8 is brought down to within about 1.5 V of Pin 1, the part is disabled. (See the Specification tables for exact disable and enable voltage levels.) If the disable feature is not going to be used, Pin 8 can be tied to +VS or a logic high source, and Pin 1 can be tied to ground or logic low. Alternatively, if Pin 1 and Pin 8 are not connected, the part will be in an enabled state. ORDERING GUIDE Model Temperature Range Package Description Package Outline Branding AD8021AR AD8021AR-REEL AD8021AR-REEL7 AD8021ARM AD8021ARM-REEL AD8021ARM-REEL7 AD8021ARZ* AD8021ARZ-REEL* AD8021ARZ-REEL7* –40∞C to +85∞C –40∞C to +85∞C –40∞C to +85∞C –40∞C to +85∞C –40∞C to +85∞C –40∞C to +85∞C –40∞C to +85∞C –40∞C to +85∞C –40∞C to +85∞C 8-Lead SOIC 8-Lead SOIC 8-Lead SOIC 8-Lead MSOP 8-Lead MSOP 8-Lead MSOP 8-Lead SOIC 8-Lead SOIC 8-Lead SOIC R-8 R-8 R-8 RM-8 RM-8 RM-8 R-8 R-8 R-8 HNA HNA HNA *Z = Lead Free CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8021 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. REV. D –5– AD8021–Typical Performance Characteristics (TA = 25⬚C, VS = 5 V, RL = 1 k, G = +2, RF = RG = 499 , RS = 49.9 , RO = 976 , RD = 53.6 , CC = 7 pF, CL = 0, CF = 0, VOUT = 2 V p-p, Freq = 1 MHz, unless otherwise noted.) 24 9 G=2 G = 10, RF = 1k, RG = 110, C C = 0pF 21 18 G = 5, RF = 1k, RG = 249, C C = 2pF 15 6 12 9 G = 2, RF = RG = 499, C C = 7pF 6 3 5 4 12V 3 2 G = 1, RF = 75, C C = 10pF 0 VS = 2.5V 1 –3 0 –6 0.1M 1M 10M FREQUENCY – Hz 100M –1 1M 1G 24 3 21 2 G = –1 G = –10, RF = 1k, RG = 100, RIN = 100, C C = 0pF 18 VS = 2.5V 5V 1 0 15 G = –5, RF = 1k, RG = 200, RIN = 66.5, C C = 1.5pF 12 GAIN – dB GAIN – dB 1G 10M 100M FREQUENCY – Hz TPC 4. Small Signal Frequency Response vs. Frequency and Supply, VOUT = 50 mV p-p, Noninverting. See Test Circuit 1. TPC 1. Small Signal Frequency Response vs. Frequency and Gain, VOUT = 50 mV p-p, Noninverting. See Test Circuit 1. 9 6 G = –2, RF = 499, RG = 249, RIN = 63.4, C C = 4pF 3 0 –6 0.1M 1M 10M FREQUENCY – Hz VS = 12V –1 –2 –3 –4 –5 G = –1, RF = 499, RG = 499, RIN = 56.2, C C = 7pF –3 VS = 2.5V –6 100M –7 1M 1G 10M 100M FREQUENCY – Hz 1G TPC 5. Small Signal Frequency Response vs. Frequency and Supply, VOUT = 50 mV p-p, Inverting. See Test Circuit 3. TPC 2. Small Signal Frequency Response vs. Frequency and Gain, VOUT = 50 mV p-p, Inverting. See Test Circuit 1. 9 9 G=2 CC = 5pF G=2 8 7 8 7 7pF GAIN – dB 5 9pF 4 3 5 4 VOUT = 4V p-p 1V p-p 3 2 2 7pF 1 1 9pF 0 0 –1 0.1M VOUT = 0.1V AND 50mV p-p 6 6 GAIN – dB 5V 7 GAIN – dB CLOSED-LOOP GAIN – dB VS = 2.5V 8 1M 10M FREQUENCY – Hz 100M –1 1M 1G 10M 100M FREQUENCY – Hz 1G TPC 6. Frequency Response vs. Frequency and VOUT, Noninverting. See Test Circuit 1. TPC 3. Small Signal Frequency Response vs. Frequency and Compensation Capacitor, VOUT = 50 mV p-p. See Test Circuit 1. –6– REV. D AD8021 10 10 G=2 9 8 8 7 7 6 6 GAIN – dB GAIN – dB 9 5 1k 4 RF = 1k G=2 RF = RG RF = 499 RF = 250 5 4 3 RF = 150 3 RL = 100 2 2 1 RF = 75 1 0 0.1M 1M 10M FREQUENCY – Hz TPC 7. Large Signal Frequency Response vs. Frequency and Load, Noninverting. See Test Circuit 2. 1M 10M FREQUENCY – Hz 100M 1G TPC 10. Small Signal Frequency Response vs. Frequency and RF, Noninverting, VOUT = 50 mV p-p. See Test Circuit 1. 9 15 +85C G=2 RF = 1k AND CF = 2.2pF 0 0.1M 1G 100M G=2 8 12 +25C 7 9 6 –40C 5 +85C 4 VOUT = 50mV p-p GAIN – dB VOUT = 2V p-p 3 2 –3 RS = 100 –6 –9 –40C 0 –1 1M RS = 249 –12 –15 0.1M 1G 10M 100M FREQUENCY – Hz TPC 8. Frequency Response vs. Frequency, Temperature and VOUT, Noninverting. See Test Circuit 1. 1M 10M FREQUENCY – Hz 100M 1G TPC 11. Small Signal Frequency Response vs. Frequency and RS, Noninverting, VOUT = 50 mV p-p. See Test Circuit 1. 100 18 G=2 50pF 15 90 30pF 80 12 OPEN-LOOP GAIN – dB 20pF 9 10pF GAIN – dB RS = 49.9 0 +25C 1 6 3 0pF 0 70 180 60 135 50 90 40 45 30 0 –6 20 –45 –9 10 –90 –3 –12 1M 10M 100M FREQUENCY – Hz 0 10k 1G TPC 9. Small Signal Frequency Response vs. Frequency and Capacitive Load, Noninverting, VOUT = 50 mV p-p. See Test Circuit 2 and Figure 16. REV. D 3 100k 1M 10M FREQUENCY – Hz 100M TPC 12. Open-Loop Gain and Phase vs. Frequency, RG =100 Ω, RF = 1 kΩ, RO = 976 Ω, RD = 53.6 Ω, CC = 0 pF. See Test Circuit 3. –7– –135 1G PHASE – Degrees GAIN – dB 6 AD8021 –20 6.4 G=2 –30 6.2 –40 VS = 2.5V f1 POUT – dBm GAIN – dB –50 6.0 5V 5.8 12V f2 f = 0.2MHz POUT –60 976 –70 53.6 50 –80 –90 5.6 –100 –110 5.4 1M 10M FREQUENCY – Hz –120 9.5 100M TPC 13. 0.1 dB Flatness vs. Frequency and Supply, VOUT = 1 V p-p, RL = 150 Ω, Noninverting. See Test Circuit 2. 9.7 10.3 10.0 FREQUENCY – MHz 10.5 TPC 16. Intermodulation Distortion vs. Frequency –20 50 –30 SECOND –50 DISTORTION – dBc THIRD-ORDER INTERCEPT – dBm –40 –60 –70 RL = 100 –80 RL = 1k –90 –100 –110 –120 45 40 VS = 5V 35 VS = 2.5V 30 25 THIRD –130 0.1M 1M FREQUENCY – Hz 10M 20 20M 5 0 TPC 14. Second and Third Harmonic Distortion vs. Frequency and RL 10 FREQUENCY – MHz 15 20 TPC 17. Third-Order Intercept vs. Frequency and Supply Voltage –30 –50 –40 –60 –70 –60 –70 DISTORTION – dBc DISTORTION – dBc –50 THIRD VS = 2.5V –80 SECOND –90 –100 SECOND –120 SECOND –130 100k –80 RL = 100 THIRD –90 SECOND –100 VS = 5V –110 SECOND THIRD VS = 12V 1M FREQUENCY – Hz RL = 1k –110 THIRD 10M –120 20M 1 TPC 15. Second and Third Harmonic Distortion vs. Frequency and VS 2 4 3 VOUT – V p-p 5 6 TPC 18. Second and Third Harmonic Distortion vs. VOUT and RL REV. D –8– AD8021 –60 3.4 –70 fC = 5MHz –80 THIRD –90 SECOND fC = 1MHz –100 –3.2 POSITIVE OUTPUT POSITIVE OUTPUT VOLTAGE – V SECOND DISTORTION – dBc –3.1 3.5 –110 3.3 –3.3 3.2 –3.4 3.1 –3.5 3.0 –3.6 2.9 –120 1 3 4 VOUT – V p-p 2 5 0 1600 120 –40 SHORT-CIRCUIT CURRENT – mA –50 fC = 5MHz –60 DISTORTION – dBc 800 1200 LOAD – 400 TPC 22. DC Output Voltage vs. Load. See Test Circuit 1. TPC 19. Second and Third Harmonic Distortion vs. VOUT and Fundamental Frequency (fC), G = +2 SECOND –70 THIRD –80 SECOND –90 fC = 1MHz THIRD –100 1 2 3 4 VOUT – V p-p 5 100 VS = 12 80 VS = 5.0 60 VS = 2.5 40 20 0 –50 –110 6 –30 –10 10 30 50 TEMPERATURE – C 70 90 110 TPC 23. Short-Circuit Current to Ground vs. Temperature TPC 20. Second and Third Harmonic Distortion vs. VOUT and Fundamental Frequency (fC), G = +10 50 –70 G=2 fC = 1MHz 40 RL = 1k RL = 1k, 150 30 –80 20 –90 VOUT – mV DISTORTION – dBc –3.8 2000 2.8 6 –3.7 NEGATIVE OUTPUT THIRD SECOND –100 10 –10 –20 THIRD –30 –110 –40 –50 –120 0 200 400 600 FEEDBACK RESISTANCE – 800 0 1000 TPC 21. Second and Third Harmonic Distortion vs. Feedback Resistor (RF) REV. D 40 80 120 TIME – ns 160 200 TPC 24. Small Signal Transient Response vs. RL, VO = 50 mV p-p. See Test Circuit 2, Noninverting. –9– NEGATIVE OUTPUT VOLTAGE – V –50 AD8021 VO = 4V p-p G=2 2.0 VO = 2V p-p G=2 2.0 RL = 1k 1.0 VOUT – V VOUT – V 1.0 RL = 150 –1.0 VS = 2.5V –1.0 VS = 5V –2.0 –2.0 0 40 80 120 TIME – ns 160 0 200 80 120 TIME – ns 160 200 TPC 28. Large Signal Transient Response vs. VS. See Test Circuit 1. TPC 25. Large Signal Transient Response vs. RL. See Test Circuit 2, Noninverting. 5 VIN = 3V G = +2 VIN = 1V/DIV VOUT = 2V/DIV VO = 4V p-p G = –1 4 40 3 VOUT, RL = 1k VIN 2 RL = 150 VOLTS 1 –1 VOUT –2 –3 –4 VIN –5 0 50 100 150 TIME – ns 200 0 250 CL = 50pF G=2 200 300 TIME – ns 400 500 TPC 29. Overdrive Recovery vs. RL. See Test Circuit 2. TPC 26. Large Signal Transient Response. See Test Circuit 3, Inverting. 2.0 100 VO = 4V p-p G=2 CL = 10pF, 0pF VOUT – V OUTPUT SETTLING 1.0 –1.0 +0.01% –0.01% 25ns –2.0 VERT = 0.2mV/DIV 0 40 80 120 TIME – ns 160 HOR = 5ns/DIV 200 TPC 30. 0.01% Settling Time, 2 V Step TPC 27. Large Signal Transient Response vs. CL. See Test Circuit 1. REV. D –10– AD8021 100 100 INPUT CURRENT NOISE – pA/ Hz 80 60 SETTLING – V 40 PULSEWIDTH = 120ns 20 0 –20 PULSEWIDTH = 300s –40 –60 5V –80 0V 10 t1 –100 0 4 8 12 16 20 24 28 1 10 32 100 TIME – s TPC 31. Long-Term Settling, 0 V to 5 V, VS = ± 12 V, G = +13 10k 100k FREQUENCY – Hz 1M 10M TPC 34. Input Current Noise vs. Frequency 50 0.48 G = 1 40 0.44 VOLTAGE OFFSET – mV 30 20 VOUT – mV 1k 10 –10 –20 –30 0.40 0.36 0.32 0.28 –40 –50 0 40 80 120 TIME – ns 160 0.24 –50 200 TPC 32. Small Signal Transient Response, VO = 50 mV p-p. G = +1. See Test Circuit 1. –25 0 25 50 TEMPERATURE – C 75 100 75 100 TPC 35. VOS vs. Temperature 100 8.4 INPUT BIAS CURRENT – A VOLTAGE NOISE – nV/ Hz 8.0 10 2.1nV/ Hz 7.6 7.2 6.8 6.4 1 10 100 1k 10k 100k FREQUENCY – Hz 1M 6.0 –50 10M TPC 33. Input Voltage Noise vs. Frequency REV. D –25 25 50 0 TEMPERATURE – C TPC 36. Input Bias Current vs. Temperature –11– AD8021 0 –30 –10 –40 –20 DISABLED ISOLATION – dB –20 CMRR – dB –50 –60 –70 –80 –90 –30 –40 –50 –60 –70 –100 –80 –110 –90 –120 10k 100k 1M FREQUENCY – Hz 10M –100 0.1M 100M 300 300k 100 100k 30 30k 10 3 1 0.3 0.1 3k 1k 300 100 30 0.01 10 1M 10M FREQUENCY – Hz 100k 100M 1G 100M 10k 0.03 0.003 10k 10M FREQUENCY – Hz TPC 40. Input to Output Isolation, Chip Disabled. See Test Circuit 7. OUTPUT IMPEDANCE – OUTPUT IMPEDANCE – TPC 37. CMRR vs. Frequency. See Test Circuit 4. 1M 3 10k 1G TPC 38. Output Impedance vs. Frequency, Chip Enabled. See Test Circuit 5. 100k 1M 10M FREQUENCY – Hz 1G 100M TPC 41. Output Impedance vs. Frequency, Chip Disabled. See Test Circuit 8. 0 DISABLE 4V –10 2V –20 –PSRR PSRR – dB –30 VOUTPUT 2V tEN = 45ns 1V –40 –50 VS = 2.5V +PSRR VS = 12V –60 –70 tDIS = 50ns VS = 5V –80 –90 0 100 200 300 TIME – ns 400 –100 10k 500 TPC 39. Enable (tEN)/Disable (tDIS) Time vs. VOUT. See Test Circuit 6. 100k 1M 10M FREQUENCY – Hz 100M 500M TPC 42. PSRR vs. Frequency and Supply Voltage. See Test Circuits 9 and 10. REV. D –12– AD8021 8.5 SUPPLY CURRENT – mA 8.0 7.5 7.0 6.5 6.0 5.5 –50 –25 0 25 50 TEMPERATURE – C 100 75 TPC 43. Quiescent Supply Current vs. Temperature Test Circuits HP8753D NETWORK ANALYZER 50 50 CABLE 50 AD8021 +VS RS 50 CABLE RO 50 +VS 499 499 5 RIN 49.9 CC 5 CC RD –VS 49.9 –VS 7pF RF RG 499 55.6 499 CF Test Circuit 1. Noninverting Gain +VS 50 CABLE Test Circuit 4. CMRR FET PROBE AD8021 HP8753D +VS NETWORK ANALYZER RS 50 5 RIN 49.9 100 5 CL 50 CC RL –VS 7pF –VS CC RF RG RG 499 RF 499 CF Test Circuit 2. Noninverting Gain with FET Probe Test Circuit 5. Output Impedance, Chip Enabled AD8021 +VS RO 49.9 50 8 DISABLE RIN 49.9 RG 4V REV. D 5 CC 49.9 –VS RF 499 Test Circuit 3. Inverting Gain 976 LOGIC REF RD –VS 50 CABLE 1 49.9 1.0V 5 CC +VS 49.9 50 CABLE 7pF 499 Test Circuit 6. Enable/Disable –13– 53.6 AD8021 BIAS BNC HP8753D NETWORK ANALYZER HP8753D NETWORK ANALYZER 50 50 50 50 +VS 50 CABLE 50 CABLE +VS 49.9 AD8021 1 49.9 LOGIC REF 8 DISABLE –VS 499 +VS FET PROBE 49.9, 5W 976 249 5 5 1k CC 7pF –VS CC 7pF 499 499 499 Test Circuit 7. Input to Output Isolation, Chip Disabled 53.6 Test Circuit 9. Positive PSRR BIAS BNC HP8753D NETWORK ANALYZER 50 50 –VS 50 CABLE +VS 976 249 AD8021 5 HP8753D 1 8 NETWORK ANALYZER +VS 100 5 –VS 53.6 CC 7pF 49.9 5W 50 CC 7pF 499 499 –VS Test Circuit 8. Output Impedance, Chip Disabled Test Circuit 10. Negative PSRR REV. D –14– AD8021 The typical voltage feedback op amp is frequency stabilized with a fixed internal capacitor, CINTERNAL, using dominant pole compensation. To a first-order approximation, voltage feedback op amps have a fixed gain bandwidth product. For example, if its –3 dB bandwidth for G = +1 is 200 MHz, at a gain of G = +10 its bandwidth will be only about 20 MHz. The AD8021 is a voltage feedback op amp with a minimal CINTERNAL of about 1.5 pF. By adding an external compensation capacitor, CC, the user can circumvent the fixed gain bandwidth limitation of other voltage feedback op amps. bandwidth is degraded to about 20 MHz and the phase margin increases to 90° (Arrow B). However, by reducing CC to zero, the bandwidth and phase margin return to about 200 MHz and 60° (Arrow C), respectively. In addition, the slew rate is dramatically increased, as it roughly varies with the inverse of CC. 10 9 COMPENSATION CAPACITANCE – pF APPLICATIONS Unlike the typical op amp with fixed compensation, the AD8021 allows the user to 1. Maximize the amplifier bandwidth for closed-loop gains between 1 and 10, avoiding the usual loss of bandwidth and slew rate. Optimize the trade-off between bandwidth and phase margin for a particular application. 3. Match bandwidth in gain blocks with different noise gains, such as when designing differential amplifiers (as shown in Figure 10). 110 180 100 135 70 CC = 0pF (B) (A) (C) 0 CC = 10pF 50 40 (C) 30 5 4 3 2 1 2 3 5 6 7 NOISE GAIN – V/V 8 9 10 11 Table I and Figure 4 provide recommended values of compensation capacitance at various gains and the corresponding slew rate, bandwidth, and noise. Note that the value of the compensation capacitor depends on the circuit noise gain, not the voltage gain. As shown in Figure 5, the noise gain, GN, of an op amp gain block is equal to its noninverting voltage gain, regardless of whether it is actually used for inverting or noninverting gain. Thus, Noninverting GN = RF / RG + 1 Inverting GN = RF / RG + 1 20 (B) 10 4 Figure 4. Suggested Compensation Capacitance vs. Gain for Maintaining 1 dB Peaking 45 60 6 0 90 90 86 80 7 1 PHASE – Degrees OPEN-LOOP GAIN – dB 2. 8 0 (A) –10 1k 10k 100k 1M 10M 100M FREQUENCY – Hz 1G 10G 1 RS RG 200 3 – 5 2 – –VS Figure 3 is the AD8021 gain and phase plot that has been simplified for instructional purposes. If the desired closed-loop gain is G = +1 and CC = 10 pF is chosen, Arrow A of the figure shows that the bandwidth is about 200 MHz and the phase margin is about 60°. If the gain is changed to G = +10 and CC is fixed at 10 pF, then (as expected for a typical op amp) the 2 6 AD8021 Figure 3. Simplified Diagram of Open-Loop Gain and Phase Response RF 800 + RF 800 5 3 + –VS CCOMP G = GN = 5 6 AD8021 G = –4 GN = 5 CCOMP RG 200 NONINVERTING INVERTING Figure 5. The Noise Gain of Both Is 5 Table I. Recommended Component Values. See Test Circuit 2. C F = CL = 0, RL = 1 k, RIN = 49.9 Noise Gain (Noninverting Gain) RS () RF () RG () CCOMP (pF) Slew Rate (V/s) 2 5 10 20 75 49.9 49.9 49.9 49.9 75 499 1k 1k 1k NA 499 249 110 52.3 10 7 2 0 0 120 150 300 420 200 100 49.9 1k 10 0 34 1 REV. D –15– –3 dB SS BW (MHz) Output Noise (AD8021 Only) (nV/√Hz) Output Noise (AD8021 with Resistors) (nV/√Hz) 490 205 185 150 42 2.1 4.3 10.7 21.2 42.2 2.8 8.2 15.5 27.9 52.7 6 211.1 264.1 AD8021 With the AD8021, a variety of trade-offs can be made to fine-tune its dynamic performance. Sometimes more bandwidth or slew rate is needed at a particular gain. Reducing the compensation capacitance, as illustrated in TPC 3, will increase the bandwidth and peaking due to a decrease in phase margin. On the other hand, if more stability is needed, increasing the compensation cap will decrease the bandwidth while increasing the phase margin. this high impedance with a current gain of 5,000, so that the AD8021 can maintain a high open-loop gain even when driving heavy loads. Two internal diode clamps across the inputs (Pins 2 and 3) protect the input transistors from large voltages that could otherwise cause emitter-base breakdown, which would result in degradation of offset voltage and input bias current. As with all high speed amplifiers, parasitic capacitance and inductance around the amplifier can affect its dynamic response. Often, the input capacitance (due to the op amp itself, as well as the PC board) could have a significant effect. The feedback resistance, together with the input capacitance, may contribute to a loss of phase margin, thereby affecting the high frequency response, as shown in TPC 10. Furthermore, a capacitor (CF) in parallel with the feedback resistor can compensate for this phase loss. +VS OUTPUT +IN Additionally, any resistance in series with the source will create a pole with the input capacitance (as well as dampen high frequency resonance due to package and board inductance and capacitance), the effect of which is shown in TPC 11. CINTERNAL 1.5pF –IN –VS It must also be noted that increasing resistor values will increase the overall noise of the amplifier, and that reducing the feedback resistor value will increase the load on the output stage, thus increasing distortion (TPC 18). CCOMP CC Figure 6. Simplified Schematic Using the Disable Feature When Pin 8 (DISABLE) is approximately 2 V or more higher than Pin 1 (LOGIC REFERENCE), the part is enabled. When Pin 8 is brought down to within about 1.5 V of Pin 1, the part is disabled. See the Specification tables for exact disable and enable voltage levels. If the disable feature is not going to be used, Pin 8 can be tied to VS or a logic high source, and Pin 1 can be tied to ground or logic low. Alternatively, if Pin 1 and Pin 8 are not connected, the part will be in an enabled state. THEORY OF OPERATION The AD8021 is fabricated on the second generation of Analog Devices’ proprietary High Voltage eXtra-Fast Complementary Bipolar (XFCB) process, which enables the construction of PNP and NPN transistors with similar fTs in the 3 GHz region. The transistors are dielectrically isolated from the substrate (and each other), eliminating the parasitic and latch-up problems caused by junction isolation. It also reduces nonlinear capacitance (a source of distortion) and allows a higher transistor fT for a given quiescent current. The supply current is trimmed, which results in less part-to-part variation of bandwidth, slew rate, distortion, and settling time. As shown in Figure 6, the AD8021 input stage consists of an NPN differential pair in which each transistor operates at 0.8 mA collector current. This allows the input devices a high transconductance; thus, the AD8021 has a low input noise of 2.1 nV/√Hz @ 50 kHz. The input stage drives a folded cascode that consists of a pair of PNP transistors. The folded cascode and current mirror provide a differential to single-ended conversion of signal current. This current then drives the high impedance node (Pin 5), where the CC external capacitor is connected. The output stage preserves PCB LAYOUT CONSIDERATIONS As with all high speed op amps, achieving optimum performance from the AD8021 requires careful attention to PC board layout. Particular care must be exercised to minimize lead lengths between the ground leads of the bypass capacitors and between the compensation capacitor and the negative supply. Otherwise, lead inductance can influence the frequency response and even cause high frequency oscillations. Use of a multilayer printed circuit board, with an internal ground plane, will reduce ground noise and enable a compact component arrangement. Due to the relatively high impedance of Pin 5 and low values of the compensation capacitor, a guard ring is recommended. The guard ring is simply a PC trace that encircles Pin 5 and is connected to the output, Pin 6, which is at the same potential as Pin 5. This serves two functions. It shields Pin 5 from any local circuit noise generated by surrounding circuitry. It also minimizes stray capacitance, which would tend to otherwise reduce the bandwidth. An example of a guard ring layout may be seen in Figure 7. Also shown in Figure 7, the compensation capacitor is located immediately adjacent to the edge of the AD8021 package, spanning Pin 4 and Pin 5. This capacitor must be a high quality surfacemount COG or NPO ceramic. The use of leaded capacitors is not recommended. The high frequency bypass capacitor(s) should be located immediately adjacent to the supplies, Pins 4 and 7. To achieve the shortest possible lead length at the inverting input, the feedback resistor RF is located beneath the board and just spans the distance from the output, Pin 6, to inverting input Pin 2. The return node of resistor RG should be situated as closely as possible to the return node of the negative supply bypass capacitor connected to Pin 4. REV. D –16– AD8021 Table II. Summary of ADC Driver Performance, fC = 65 kHz, VOUT = 10 V p-p (TOP VIEW) LOGIC REFERENCE 1 8 –IN 2 +VS 7 +IN 3 6 BYPASS CAPACITOR DISABLE VOUT GROUND PLANE –VS 4 5 CCOMP Parameter Measurement Unit Second Harmonic Distortion Third Harmonic Distortion THD SFDR –101.3 –109.5 –100.0 100.3 dB dB dB dB METAL +12V 50 COMPENSATION CAPACITOR GROUND PLANE 5 – RG 82.5 DRIVING 16-BIT ADCS Low noise and adjustable compensation make the AD8021 especially suitable as a buffer/driver for high resolution analogto-digital converters. Figure 8 shows a typical ADC driver configuration. The AD8021 is in an inverting gain of –7.5, fC is 65 kHz, and its output voltage is 10 V p-p. The results are listed in Table II. +12V 65kHz 5 – 570kSPS ADC OPTIONAL CF IN LO Table III. Summary of ADC Driver Performance, fC = 100 kHz, VOUT = 20 V p-p Parameter Measurement Unit Second Harmonic Distortion Third Harmonic Distortion THD SFDR –92.6 –86.4 –84.4 5.4 dB dB dB dB Figure 9 shows another ADC driver connection. The circuit was tested with a noninverting gain of 10.1 and an output voltage of approximately 20 V p-p for optimum resolution and noise performance. No filtering was used. An FFT was performed using Analog Devices’ evaluation software for the AD7665 16-bit converter. The results are listed in Table III. DIFFERENTIAL DRIVER HI CC 10pF AD7665 –12V 570kSPS RF 1.5k 56pF AD7665 RF 750 IN 16 BITS 2 50 6 AD8021 590 RG 200 5V + HI Figure 9. Noninverting ADC Driver, Gain = 10, fC = 100 kHz As seen in TPC 15, the harmonic distortion is better than 90 dB at frequencies between 100 kHz and 1 MHz. This is a real advantage for complex waveforms that contain high frequency information, as the phase and gain integrity of the sampled waveform can be preserved throughout the conversion process. The increase in loop gain results in improved output regulation and lower noise when the converter input changes state during a sample. This advantage is particularly apparent when using 16-bit high resolution ADCs with high sampling rates. 3 IN CC –12V Figure 7. Recommended Location of Critical Components and Guard Ring 6 AD8021 50 2 IN LO Figure 8. Inverting ADC Driver, Gain = –7.5, fC = 65 kHz REV. D 5V 50 3 + 16 BITS BYPASS CAPACITOR The AD8021 is uniquely suited as a low noise differential driver for many ADCs, balanced lines, and other applications requiring differential drive. If pairs of internally compensated op amps are configured as inverter and follower, the noise gain of the inverter will be higher than that of the follower section, resulting in an imbalance in the frequency response (see Figure 11). A better solution takes advantage of the external compensation feature of the AD8021. By reducing the CCOMP value of the inverter, its bandwidth may be increased to match that of the follower, avoiding compromises in gain bandwidth and phase delay. The inverting and noninverting bandwidths can be closely matched using the compensation feature, thus minimizing distortion. –17– AD8021 Figure 10 illustrates an inverter-follower driver circuit operating at a gain of 2, using individually compensated AD8021s. The values of feedback and load resistors were selected to provide a total load of less than 1 kΩ, and the equivalent resistances seen at each op amp’s inputs were matched to minimize offset voltage and drift. Figure 12 is a plot of the resulting ac responses of driver halves. VIN 249 G = +2 3 + 6 AD8021 49.9 2 5 – –VS Figure 13 shows the schematic of a 2-pole, low-pass active filter, and Table IV lists typical component values for filters having a Bessel-type response with gains of 2 and 5. Figure 14 is a network analyzer plot of this filter’s performance. VOUT1 1k 232 G = –2 3 + 6 AD8021 2 332 VOUT2 5 C1 1k – –VS The low noise and high gain bandwidth of the AD8021 make it an excellent choice in active filter circuits. Most active filter literature provides resistor and capacitor values for various filters but neglects the effect of the op amp’s finite bandwidth on filter performance; ideal filter response with infinite loop gain is implied. Unfortunately, real filters do not behave in this manner. Instead, they exhibit finite limits of attenuation, depending on the gain bandwidth of the active device. Good low-pass filter performance requires an op amp with high gain bandwidth for attenuation at high frequencies, and low noise and high dc gain for low frequency, pass-band performance. 7pF 499 499 USING THE AD8021 IN ACTIVE FILTERS +VS 5pF VIN 664 R1 R2 AD8021 3 6 2 C2 Figure 10. Differential Amplifier VOUT 5 CC –VS 12 RF RG 9 6 Figure 13. Schematic of a Second-Order Low-Pass Active Filter 3 G = –2 GAIN – dB 0 G = +2 Table IV. Typical Component Values for Second-Order Low-Pass Filter of Figure 13 –3 –6 –9 –12 –15 –18 100k 1M 10M 100M Gain R1 () R2 () RF () RS () C1 C2 CC 2 5 10 nF 10 nF 7 pF 2 pF 71.5 44.2 1G 499 365 10 nF 10 nF 40 Figure 11. AC Response of Two Identically Compensated High Speed Op Amps Configured for Gains of +2 and –2 30 G=5 GAIN – dB 20 12 9 6 10 0 G=2 –10 –20 3 GAIN – dB 499 90.9 50 FREQUENCY – Hz G = 2 –30 0 –40 –3 –50 1k –6 –9 10k 100k FREQUENCY – Hz 1M 10M Figure 14. Frequency Response of the Filter Circuit of Figure 13 for Two Different Gains –12 –15 –18 100k 215 365 1M 10M FREQUENCY – Hz 100M 1G Figure12. AC Response of Two Dissimilarly Compensated AD8021 Op Amps (Figure 11) Configured for Gains of +2 and –2. Note the Close Gain Match. REV. D –18– AD8021 Driving Capacitive Loads 20 18 FET PROBE 5 RSNUB +VS 16 14 49.9 49.9 GAIN – dB 12 6 –VS 10 499 33pF CC = 8pF; RSNUB = 0 CC 499 8 6 4 2 CC = 8pF; RSNUB = 17.4 0 0.1 1.0 10 FREQUENCY – MHz 100 1000 Figure 15. Peaking vs. RSNUB and CC for CL = 33 pF REV. D 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 CAPACITIVE LOAD – pF 40 45 50 Figure 16. Relationship of RSNUB vs. CL for 2 dB Peaking at a Gain of +2 CC = 7pF; RSNUB = 0 RL 1k 18 RSNUB – When the AD8021 drives a capacitive load, the high frequency response may show excessive peaking before it rolls off. Two techniques can be used to improve stability at high frequency and reduce peaking. The first technique is to increase the compensation capacitor, CC, which reduces the peaking while maintaining gain flatness at low frequencies. The second technique is to add a resistor, RSNUB, in series between the output pin of the AD8021 and the capacitive load, CL. Figure 15 shows the response of the AD8021 when both CC and RSNUB are used to reduce peaking. For a given CL, Figure 16 can be used to determine the value of RSNUB that maintains 2 dB of peaking in the frequency response. Note, however, that using RSNUB attenuates the low frequency output by a factor of RLOAD/(RSNUB + RLOAD). –19– AD8021 OUTLINE DIMENSIONS 8-Lead Standard Small Outline Package [SOIC] (R-8) Dimensions shown in millimeters and (inches) 4.00 (0.1574) 3.80 (0.1497) 8 5 1 4 6.20 (0.2440) 5.80 (0.2284) 1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) 0.50 (0.0196) 45 0.25 (0.0099) 1.75 (0.0688) 1.35 (0.0532) 0.51 (0.0201) 0.31 (0.0122) COPLANARITY SEATING 0.10 PLANE C01888–0–10/03(D) 5.00 (0.1968) 4.80 (0.1890) 8 0.25 (0.0098) 0 1.27 (0.0500) 0.40 (0.0157) 0.17 (0.0067) COMPLIANT TO JEDEC STANDARDS MS-012AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN 8-Lead Mini Small Outline Package [MSOP] (RM-8) Dimensions shown in millimeters 3.00 BSC 8 5 4.90 BSC 3.00 BSC 1 4 PIN 1 0.65 BSC 1.10 MAX 0.15 0.00 0.38 0.22 COPLANARITY 0.10 0.23 0.08 8 0 0.80 0.60 0.40 SEATING PLANE COMPLIANT TO JEDEC STANDARDS MO-187AA Revision History Location Page 10/03—Data Sheet changed from REV. C to REV. D. Edits to SPECIFICATIONS heading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Changes to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7/03—Data Sheet changed from REV. B to REV. C. Deleted all references to evaluation board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Universal Replaced Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Updated OUTLINE DIMENSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/03—Data Sheet changed from REV. A to REV. B. Edits to Evaluation Board Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Edits to Figure 17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6/02—Data Sheet changed from REV. 0 to REV. A. Edits to SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 –20– REV. D