2SK1949 L , 2SK1949 S Silicon N Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features 12 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche ratings 3 2, 4 12 1 3 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 20 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 5 A ——————————————————————————————————————————— Avalanche current IAP*** 5 A ——————————————————————————————————————————— Avalanche energy EAR*** 2.1 mJ ——————————————————————————————————————————— Channel dissipation Pch** 20 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 2SK1949 L , 2SK1949 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.12 0.15 Ω ID = 3 A VGS = 10 V * ———————————————————————— — 0.15 0.2 Ω ID = 3 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3 5.5 — S ID = 3 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 390 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 190 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 45 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 10 — ns ID = 3 A ———————————————————————————————— Rise time tr — 42 — ns ———————————————————————————————— Turn–off delay time td(off) — 90 — ns VGS = 10 V RL = 10 Ω ———————————————————————————————— Fall time tf — 55 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 1.0 — V IF = 5 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 60 — ns IF = 5 A, VGS = 0, diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2SK1949 L , 2SK1949 S Reverse Drain Current vs. Souece to Drain Voltage Maximun Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) 10 Pulse Test 8 6 10 V V GS = 0, –5 V 4 5V 2 0 0.4 0.8 1.2 1.6 Drain to Source Voltage 2.0 2.5 I AP = 5 A V DD = 25 V duty < 0.1 % Rg > 50 Ω 2 1.5 1 0.5 0 25 V DS (V) 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform V DS Monitor EAR = L 1 2 • L • I AP • 2 I AP Monitor VDSS VDSS – V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin –15 V 50Ω 0 VDD 2SK1949 L , 2SK1949 S Static Drain to Source State Resistance vs. Drain Current Drain to Source Sasuration Voltage V DS(on) (V) 1.0 Pulse Test 0.8 5A 0.6 0.4 2A 0.2 0 Static Drain to Source on State Resistance R DS(on) ( Ω) Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage vs. Gate to Source Voltage ID=1A 2 4 6 Gate to Source Voltage 8 10 1 Pulse Test 0.5 0.2 4V 0.1 0.05 0.1 0.2 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.5 20 10 0.4 ID=5A 0.2 V GS = 4 V 0.1 10 V 0 –40 2A 0.5 1 2 5 10 20 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current Pulse Test 0.3 VGS = 10 V V DS = 10 V Pulse Test 5 1A Tc = –25 °C 25 °C 75 °C 2 5A 1A 2A 0 40 80 120 160 Case Temperature Tc (°C) 1 0.5 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 10 50 2SK1949 L , 2SK1949 S Typical Capacitance vs. Drain to Source Voltage Body–Drain Diode Reverse Recovery Time 1000 500 di dt / = 50 AµS, Ta = 25 °C V GS = 0, Pulse Test 200 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 5 0.1 VGS = 0 f = 1 MHz 12 VDS VGS 8 I D= 5 A 4 0 20 500 Switching Time t (ns) 16 4 8 12 16 Gate Charge Qg (nc) 20 30 40 50 Drain to Source Voltage V DS (V) V GS (V) V DD = 50 V 25 V 10 V V DD = 10 V 25 V 50 V 10 0 Gate to Source Voltage V DS (V) Drain to Source Voltage Crss Switching Characteristics 20 80 0 50 10 Dynamic Input Characteristics 20 Coss 100 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 100 40 200 20 10 60 Ciss V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 200 t d(off) 100 50 tf 20 tr t d(on) 10 5 0.1 0.2 0.5 1 Drain Current 2 5 I D (A) 10 2SK1949 L , 2SK1949 S Reverse Drain Current vs. Souece to Drain Voltage Maximun Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) 10 Pulse Test 8 6 10 V V GS = 0, –5 V 4 5V 2 0 0.4 0.8 1.2 1.6 Drain to Source Voltage 2.0 2.5 I AP = 5 A V DD = 25 V duty < 0.1 % Rg > 50 Ω 2 1.5 1 0.5 0 25 V DS (V) 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform V DS Monitor EAR = L 1 2 • L • I AP • 2 I AP Monitor VDSS VDSS – V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin –15 V 50Ω 0 VDD 2SK1949 L , 2SK1949 S Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 µ D= PW T PW T 100 µ 1m 10 m Pulse Width 100 m 1 Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 10 PW (S) 90% D.U.T. RL Vin Vin 10 V 50Ω V DD = 30 V Vout 10% 10% 90% td(on) tr 10% 90% td(off) tf