OM6038SM OM6040SM OM6039SM OM6041SM POWER MOSFET IN HERMETIC ISOLATED SURFACE MOUNT PACKAGE 100V Thru 500V, Up To 10 Amp, N-Channel Power MOSFETs In A Hermetic Surface Mount Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV and S Levels DESCRIPTION This series of hermetically packaged surface mount products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in surface mount applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS @ TC = 25°C PART NUMBER OM6038SM OM6039SM OM6040SM OM6041SM VDS 100V 200V 400V 500V RDS(on) .20Ω .44Ω 1.05Ω 1.60Ω SCHEMATIC ID 14A 9A 5A 4A PIN CONNECTION 2 Drain 2 1 3 Pin 1: Pin 2: Pin 3: Case: 3 Gate 1 Source 4 11 R1 Supersedes 1 05 R0 3.5 - 85 Source Drain Gate Isolated 3.5 Gate-Body Leakage (OM6001) Zero Gate Voltage Drain IGSS IDSS On-State Drain Current1 3.5 - 86 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf 23 38 35 15 100 V = 10 V, ID = 8 A TC = 125°C VGS = 10 V, ID = 8 A, GS VGS = 10 V, ID = 8 A ns ns ns ns pF pF pF On-State Drain Current1 Current Zero Gate Voltage Drain Gate-Body Leakage (OM6002) Gate-Body Leakage (OM6102) td(on) tr VDD = 30V, ID ≅ 8 A Rg = 7.5 Ω, VDS = 10 V tf td(off) Crss Coss Ciss gfs Fall Time Turn-Off Delay Time Rise Time Turn-On Delay Time Reverse Transfer Capacitance Output Capacitance Input Capacitance Forward Transductance1 DYNAMIC Resistance1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Voltage1 VDS(on) Static Drain-Source On-State ID(on) IDSS IGSS f = 1 MHz VDS = 25 V VGS = 0 D VDS ≥ 2 VDS(on), VGS = 10 V TC = 125° C VDS = 0.8 Max. Rat., VGS = 0, VDS = Max. Rat., VGS = 0 VGS = ± 20 V S(Ω) VDS ≥ 2 VDS(on), ID = 8 A Ω Ω V A mA mA nA IGSS VGS(th) Gate-Threshold Voltage VGS = ± 12.8 V VDS = VGS, ID = 250 µA 3.0 9.0 2.0 200 27 45 18 9 55 150 780 5.8 1.25 0.2 0.1 4.0 0.88 0.44 2.2 1.0 0.25 ± 100 ± 500 V VGS = 0, Diode Forward Voltage1 Reverse Recovery Time trr 100 - 2.5 - 2.5 - 56 - 14 1 Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%. Diode Forward Voltage1 VSD (Body Diode) Source Current1 VSD ISM (Body Diode) Continuous Source Current ns V V A A G S dlF/ds = 100 A/µs TJ = 150°C, IF = IS, TC = 25°C, IS = -12 A, VGS = 0 TC = 25°C, IS = -14 A, VGS = 0 Junction rectifier. the integral P-N symbol showing Modified MOSPOWER Reverse Recovery Time Diode Forward Voltage1 Diode Forward Voltage1 (Body Diode) Source Current1 250 -2 -2 - 36 -9 1 Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%. trr VSD VSD ISM (Body Diode) Continuous Source Current = 10 V, ID = 5.0 A TC = 125°C VGS = 10 V, ID = 5.0 A, GS VGS = 10 V, ID = 5.0 A ns ns ns ns pF pF pF Rg = 7.5 Ω, VGS =10 V VDD = 75V, ID ≅ 5.0 A f = 1 MHz VDS = 25 V VGS = 0 ns V V A A G S dlF/ds = 100 A/µs TJ = 150°C, IF = IS, TC = 25°C, IS = -8 A, VGS = 0 TC = 25°C, IS = -9 A, VGS = 0 Junction rectifier. the integral P-N symbol showing Modified MOSPOWER D VDS ≥ 2 VDS(on), VGS = 10 V TC = 125° C VDS = 0.8 Max. Rat., VGS = 0, VDS = Max. Rat., VGS = 0 VGS = ± 20 V VGS = ± 12.8 V VDS = VGS, ID = 250 µA ID = 250 µA S(Ω) VDS ≥ 2 VDS(on), ID = 5.0 A Ω Ω V A mA mA nA nA V V BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Reverse Transfer Capacitance Crss 250 0.40 0.20 1.60 1.0 0.25 ± 100 V nA Voltage ID = 250 µA IS Output Capacitance Coss 750 1.2 0.2 0.1 4.0 ± 500 V IS Input Capacitance Ciss 4.0 14 2.0 100 Min. Typ. Max. Units Test Conditions (TC = 25°C unless otherwise noted) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Forward Transductance1 gfs DYNAMIC Resistance1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Voltage1 VDS(on) Static Drain-Source On-State ID(on) Gate-Body Leakage (OM6101) Current Gate-Threshold Voltage VGS(th) IGSS Voltage BVDSS Drain-Source Breakdown Parameter VGS = 0, Min. Typ. Max. Units Test Conditions (Ω) BVDSS Drain-Source Breakdown Parameter ELECTRICAL CHARACTERISTICS: STATIC P/N OM6039SM (200V) (TC = 25°C unless otherwise noted) STATIC P/N OM6101ST / OM6038SM (100V) (Ω) 3.5 ELECTRICAL CHARACTERISTICS: OM6038SM - OM6041SM (TC = 25°C unless otherwise noted) On-State Drain Current1 3.5 - 87 ns 25 Diode Forward Voltage1 Reverse Recovery Time trr 470 A V V - 22 - 1.6 - 2.5 ns A - 5.5 1 Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%. Diode Forward Voltage1 VSD (Body Diode) Source Current1 (Body Diode) Continuous Source Current VSD ISM IS gfs 2.5 1.0 0.25 ± 100 25 42 20 18 30 90 700 2.8 2.9 3.3 1.6 3.25 4.00 0.2 0.1 4.0 ± 500 trr TJ = 150°C, IF = IS, Voltage1 Reverse Recovery Time Diode Forward Voltage1 Diode Forward (Body Diode) Source Current1 (Body Diode) Continuous Source Current 430 - 1.4 -2 - 18 - 4.5 1 Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%. VSD dlF/ds = 100 A/µs VSD ISM TC = 25°C, IS = -4.5 A, VGS = 0 S IS TC = 25°C, IS = -5.5 A, VGS = 0 Junction rectifier. G Fall Time Turn-Off Delay Time Rise Time Turn-On Delay Time Reverse Transfer Capacitance Output Capacitance Input Capacitance Forward Transductance1 4.5 2.0 500 V VGS = 0, = 10 V, ID = 2.5 A TC = 125°C VGS = 10 V, ID = 2.5 A, GS VGS = 10 V, ID = 2.5 A VDS ≥ 2 VDS(on), VGS = 10 V TC = 125° C VDS = 0.8 Max. Rat., VGS = 0, VDS = Max. Rat., VGS = 0 VGS = ± 20 V VGS = ± 12.8 V VDS = VGS, ID = 250 µA ID = 250 µA ns ns ns ns pF pF pF Rg = 7.5 Ω, VGS = 10 V VDD = 225 V, ID ≅ 2.5 A f = 1 MHz VDS = 25 V VGS = 0 ns V V A A G S dlF/ds = 100 A/µs TJ = 150°C, IF = IS, TC = 25°C, IS = -4 A, VGS = 0 TC = 25°C, IS = -4.5 A, VGS = 0 Junction rectifier. the integral P-N symbol showing Modified MOSPOWER D S(Ω) VDS ≥ 2 VDS(on), ID = 2.5 A Ω Ω V A mA mA nA nA V V Min. Typ. Max. Units Test Conditions BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS tf td(off) tr Coss Ciss Rg = 10 Ω,VGS = 10 V the integral P-N Resistance1 DYNAMIC td(on) symbol showing Resistance1 RDS(on) Static Drain-Source On-State Crss D Voltage1 RDS(on) Static Drain-Source On-State f = 1 MHz Modified MOSPOWER On-State Drain Current1 Current Zero Gate Voltage Drain Gate-Body Leakage (OM6004) VDS(on) Static Drain-Source On-State VDD = 175 V, ID ≅ 3.0 A VDS = 25 V VGS = 0 BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Fall Time ns 40 tf ns 20 Turn-On Delay Time Turn-Off Delay Time ns Reverse Transfer Capacitance Crss td(on) Rise Time pF 20 18 Output Capacitance Coss tr TC = 125°C pF 70 Input Capacitance Ciss td(off) = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A, GS pF Ω V VGS = 10 V, ID = 3.0 A 700 Ω V VDS ≥ 2 VDS(on), VGS = 10 V TC = 125° C S(Ω) VDS ≥ 2 VDS(on), ID = 3.0 A 2.0 1.05 3.15 IDSS VDS = Max. Rat., VGS = 0 ID(on) IGSS VGS = ± 20 V VDS = 0.8 Max. Rat., VGS = 0, IGSS VGS = ± 12.8 V Gate-Body Leakage (OM6104) Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA BVDSS Drain-Source Breakdown Parameter Voltage 3.6 2.4 A Forward Transductance1 3.0 5.5 mA gfs DYNAMIC Resistance1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Voltage1 VDS(on) Static Drain-Source On-State ID(on) 1.0 0.2 mA nA (TC = 25°C unless otherwise noted) STATIC P/N OM6104ST / OM6041SM (500V) ELECTRICAL CHARACTERISTICS: ID = 250 µA (Ω) Current 0.25 Zero Gate Voltage Drain IDSS 0.1 ± 100 Gate-Body Leakage (OM6003) IGSS nA V 4.0 ± 500 Gate-Body Leakage (OM6103) 2.0 Gate-Threshold Voltage IGSS V 400 VGS = 0, Min. Typ. Max. Units Test Conditions VGS(th) Voltage BVDSS Drain-Source Breakdown Parameter STATIC P/N OM6103ST / OM6040SM (400V) (Ω) ELECTRICAL CHARACTERISTICS: OM6038SM - OM6041SM 3.5 OM6038SM - OM6041SM ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OM6038 OM6039 100 OM6040 200 OM6041 VDS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS = 1 MΩ) ID @ TC = 25°C Continuous Drain Current2 ± 14 ±9 ±5 ±4 A ID @ TC = 100°C Continuous Drain Current ±7 ±5 ±3 ±2 A 100 2 400 Units 200 400 500 V 500 V IDM Pulsed Drain Current ± 45 ± 35 ± 18 ± 10 A PD @ TC = 25°C Maximum Power Dissipation 50 50 50 50 W PD @ TC = 100°C Maximum Power Dissipation 25 25 25 25 W Junction To Case Linear Derating Factor 0.4 0.4 0.4 0.4 W/°C Junction To Ambient Linear Derating Factor .0125 .0125 .0125 .0125 W/°C TJ Operating and Tstg Storage Temperature Range 1 -55 to 150 Lead Solder Temperature (1/16" from case for 5 secs.) -55 to 150 -55 to 150 -55 to 150 225 225 225 225 °C °C 1 Pulse Test: Pulse width ≤ 300 µsec. Duty Cycle ≤ 2%. 2 Package PIN Limitations = 15 Amps THERMAL RESISTANCE RthJC Junction-to-Case 2.5 °C/W RthJA Junction-to-Ambient 80 °C/W POWER DERATING MECHANICAL OUTLINE .425M 75 M 60 .100M .200M RθJC = 2.5 °C/W .425M M PD - POWER DISSIPATION (WATTS) 90 3.5 Free Air Operation .035 WIDEM FLAT 3 PLCS.M 45 30 M 15 .350 MIN.M M ± .020M .115M 0 .160M 0 25 50 75 100 125 150 TC - CASE TEMPERATURE (°C) 175 .020M .080 M