VISHAY SI1407DL

Si1407DL
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
VDS (V)
–12
12
rDS(on) ()
ID (A)
0.130 @ VGS = –4.5 V
–1.8
0.170 @ VGS = –2.5 V
–1.5
0.225 @ VGS = –1.8 V
–1.3
SOT-363
SC-70 (6-LEADS)
1
6
D
D
2
5
D
G
3
4
S
Marking Code
OC
XX
YY
D
Lot Traceability
and Date Code
Part # Code
Top View
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
–12
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150C)
150 C)a
TA = 25C
V
–1.6
–1.8
ID
TA = 85C
Pulsed Drain Current
–1.4
–1.2
IDM
Continuous Diode Current (Diode Conduction)a
IS
TA = 25C
Maximum Power Dissipationa
Unit
TA = 85C
Operating Junction and Storage Temperature Range
PD
A
–5
–0.8
–0.8
0.625
0.568
0.400
0.295
W
TJ, Tstg
C
–55 to 150
Parameter
Maximum Junction-to-Ambienta
Symbol
t 5 sec
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJA
RthJF
Typical
Maximum
165
200
180
220
105
130
Unit
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71074
S-01561—Rev. C, 17-Jul-00
www.vishay.com FaxBack 408-970-5600
2-1
Si1407DL
New Product
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = –250 mA
–0.45
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
Voltagea
"100
VDS = –9.6 V, VGS = 0 V
–1
VDS = –9.6 V, VGS = 0 V, TJ = 85C
–5
VDS = –5 V, VGS = –4.5 V
–2
nA
mA
A
VGS = –4.5 V, ID = –1.8 A
0.105
0.130
VGS = –2.5 V, ID = –1.5 A
0.140
0.170
VGS = –1.8 V, ID = –0.8 A
0.185
0.225
gfs
VDS = –10 V, ID = –1.8 A
4.3
VSD
IS = –0.8 A, VGS = 0 V
–0.77
–1.1
5.5
7.0
VDS = –6
6 V,
V VGS = –4.5
45V
V, ID = –1.8
18A
0.95
rDS(on)
Forward Transconductancea
Diode Forward
VDS = 0 V, VGS = "8 V
ID(on)
a
D i S
Drain-Source
On-State
O S
Resistance
R i
V
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
8
12
tr
33
50
32
50
29
45
20
40
Rise Time
Turn-Off Delay Time
VDD = –6
6V
V,, RL = 10 W
ID ^ –1
1 A,
A VGEN = –4.5
45V
V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
C
1.10
IF = –0.8 A, di/dt = 100 A/ms
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Output Characteristics
Transfer Characteristics
5
4.0
VGS = 5 thru 2 V
3.2
I D – Drain Current (A)
I D – Drain Current (A)
4
3
2
1.5 V
1
2.4
1.6
TC = 125C
0.8
25C
1V
–55C
0
0
0
1
2
3
4
VDS – Drain-to-Source Voltage (V)
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2-2
5
0
0.5
1.0
1.5
2.0
2.5
VGS – Gate-to-Source Voltage (V)
Document Number: 71074
S-01561—Rev. C, 17-Jul-00
Si1407DL
New Product
Vishay Siliconix
Capacitance
1000
0.4
800
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
On-Resistance vs. Drain Current
0.5
VGS = 1.8 V
0.3
0.2
VGS = 2.5 V
0.1
Ciss
600
400
Coss
200
VGS = 4.5 V
Crss
0
0
0
1
2
3
4
5
0
2
4
ID – Drain Current (A)
10
12
On-Resistance vs. Junction Temperature
Gate Charge
1.6
VDS = 6 V
ID = 1.8 A
r DS(on) – On-Resistance ()
(Normalized)
V GS – Gate-to-Source Voltage (V)
8
VDS – Drain-to-Source Voltage (V)
5
4
3
2
1
VGS = 4.5 V
ID = 1.8 A
1.4
1.2
1.0
0.8
0
0
1
2
3
4
5
0.6
–50
6
–25
0
Qg – Total Gate Charge (nC)
25
50
75
100
125
150
TJ – Junction Temperature (C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
5
r DS(on) – On-Resistance ( )
TJ = 150C
I S – Source Current (A)
6
1
TJ = 25C
0.4
ID = 1.8 A
0.3
ID = 0.8 A
0.2
0.1
0
0.1
0
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71074
S-01561—Rev. C, 17-Jul-00
1.2
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
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2-3
Si1407DL
New Product
Vishay Siliconix
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.4
10
8
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
0.3
0.1
6
4
0.0
2
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
0
10–2
10–1
TJ – Temperature (C)
1
10
30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 180C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
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2-4
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71074
S-01561—Rev. C, 17-Jul-00