Freescale Semiconductor, Inc. Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc... N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical Two–Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture Output Power — 130 Watts PEP Power Gain — 17.3 dB Efficiency — 41% IMD — –32.5 dBc • 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 130 Watts, f1 = 857 MHz, f2 = 863 MHz • Integrated ESD Protection • Excellent Thermal Stability • Characterized with Differential Large–Signal Impedance Parameters 470 – 860 MHz, 130 W, 32 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 375F–04, STYLE 1 NI–650 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 70 Vdc Gate–Source Voltage VGS – 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 302 1.72 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.58 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 For More Information On This Product, Go to: www.freescale.com MRF374A 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 70 — — Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) VGS(Q) 2.5 3.3 4.5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) VDS(on) — 0.41 0.45 Vdc Input Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Ciss — 97.3 — pF Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Coss — 49 — pF Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Crss — 1.91 — pF OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID =10 µA) Freescale Semiconductor, Inc... ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION (In Motorola MRF374A Narrowband Circuit, 50 ohm system) (2) Common Source Power Gain (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) Gps 16 17.3 — dB Drain Efficiency (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) η 36 41.2 — % Intermodulation Distortion (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) IMD — –32.5 –28 dB Load Mismatch (VDD = 32 Vdc, Pout = 130 W Two–Tone, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz, VSWR 10:1 at All Phase Angles of Test) No Degradation in Output Power TYPICAL CHARACTERISTICS, BROADBAND OPERATION (In Motorola MRF374 Broadband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) Gps — 15.8 — dB Drain Efficiency (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) η — 35 — % Intermodulation Distortion (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) IMD — 34.5 — dB (1) Each side of device measured separately. (2) Measured in push–pull configuration. MRF374A 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 345 0 ( 46 6 76 7&6 & & "6 56 75 3 %*9, :: 56 "6 # " 4 ( Freescale Semiconductor, Inc... 7& "&6 " 8 5 7 "56 86 5 " 7"6 3 !9,9, "" 7" "& "5 " :: Vertical Balun Mounting Detail !$ & "&'# $ !" # !$ " "&'# $ *+ , # - . /- ) $ ) 0 1 ) $ ) 1 .2 )' %$ # $ () ## $ Figure 1. MRF374A Narrowband Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF374A 3 Freescale Semiconductor, Inc. Table 1. MRF374A Narrowband Test Circuit Component Layout Designations and Values Freescale Semiconductor, Inc... Designation Description C1 0.8 pF Chip Capacitor, B Case, ATC C2 2.2 pF Chip Capacitor, B Case, ATC C3 0.5 – 5.0 pF Variable Capacitor, Johanson Gigatrim C4A, B, C12A, B 47 pF Chip Capacitors, B Case, ATC C5 1.0 pF Chip Capacitor, B Case, ATC C6 10 pF Chip Capacitor, B Case, ATC C7A, B, C14A, B 100,000 pF Chip Capacitors, B Case, ATC C9A, B 15 pF Chip Capacitors, B Case, ATC C10 3.9 pF Chip Capacitor, B Case, ATC C11 5.1 pF Chip Capacitor, B Case, ATC C13A, B 2.2 mF, 100 V Chip Capacitors, Vishay #VJ3640Y225KXBAT L1A, B 5.0 nH, Coilcraft #A02T L2A, B 8.0 nH, Coilcraft #A03T L3A, B 130.0 nH, Coilcraft #132–11SMJ L4 8.8 nH, Coilcraft #1606–8 R1A, B 51 W, 1/4 W Chip Resistors, Vishay Dale (1210) R2 10 W, 1/2 W Chip Resistor, Vishay Dale (2010) R3A, B 3.3 kW, 1/8 W Chip Resistors, Vishay Dale (1206) R4A, B 180 W, 1/4 W Chip Resistors, Vishay Dale (1210) PCB MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, εr = 3.48 Balun B1A, B Vertical 860 MHz Narrowband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 MRF374A 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. "8 ( 5 "6 46 7# & 3 %*9, " #, "46 "6 6 " 86 " 7& 7"6 "" 8 "56 "& " 3 !9,9, "5 7" "4 7 Freescale Semiconductor, Inc... 4 " 4 ( 6 75 :: "6 "#6 76 5 # 7 345 &6 "# " & :: Vertical Balun Mounting Detail !$ & "&'# $ !" # !$ " "&'# $ *+ , # / . /- ) $ ) 0 1 ) $ ) 1 .2 )' %$ # $ () ## $ Figure 2. MRF374 Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF374A 5 Freescale Semiconductor, Inc. Table 2. MRF374 Broadband Test Circuit Component Designations and Values Freescale Semiconductor, Inc... Designation Description C1 0.8 pF Chip Capacitor, B Case, ATC C2 8.2 pF Chip Capacitor, B Case, ATC C3A, B, C14A, B 100 pF Chip Capacitors, B Case, ATC C4 7.5 pF Chip Capacitor, B Case, ATC C5 3.0 pF Chip Capacitor, B Case, ATC C6 9.1 pF Chip Capacitor, B Case, ATC C7 15 pF Chip Capacitor, B Case, ATC C8A, B 12 pF Chip Capacitors, B Case, ATC C9A, B 4.7 pF Chip Capacitors, B Case, ATC C10 10 pF Chip Capacitor, B Case, ATC C11 3.6 pF Chip Capacitor, B Case, ATC C12 3.0 pF Chip Capacitor, B Case, ATC C13 2.7 pF Chip Capacitor, B Case, ATC C15A, B 3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT C16A, B 22 mF, 35 V Chip Capacitors, Kemet #491D226K035AS C17A, B 3.9 pF Chip Capacitors, B Case, ATC C18A, B 2.2 mF, 50 V Chip Capacitors, Vitramon #VJ2225Y225KXAAT C19 10 mF, 35 V Chip Capacitor, Kemet #T491D106K035AS L1A, B, L3A, B, L4, L5 8.0 nH, Coilcraft #A03T L2, L6 12.5 nH, Coilcraft #A04T R1A, B 22 Ω, 1/8 W Chip Resistor, Vishay Dale (1206) R2A, B, R7A, B 10 Ω, 1/8 W Chip Resistor, Vishay Dale (1206) R3 390 Ω, 1/8 W Chip Resistor, Vishay Dale (1206) R4 2.4 kΩ, 1/8 W Chip Resistor, Vishay Dale (1206) R5T 470 Ω Thermistor, KOA SPEER MOT #0680149M01 R6 6.8 kΩ, 1/2 W Resistor (Axial Lead), Vishay Dale (2010) PCB MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, ε = 3.48 Balun B1, B2 Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, ε = 10.2 MRF374A 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. MRF374A TYPICAL CHARACTERISTICS :: ; & ) & ) "'# " ; " < = %:> ; 4# 6 n3?2 ; "#'# "# 5 # 4 8 ; " < = %:> ; 4# 6 n3?2 ; C& C&# :: ; & ) C C# C5 & ) C5# C# 5 # .@ 3=>9=*B Figure 3. Gain versus Frequency in Broadband Circuit & %7@ %*9,A=,9*A7!A) ( $ @AA!<=A(6%*A) η@A:6%*A=33%%=*BAD # :: ; & ) & ) &# & 5 # 5 ($ ; " < = %:> ; 4# 6 n3?2 ; 5 4 "# # :: ; & ) ; " < = %:> ; 4# 6 n3?2 ; " : # .@ 3=>9=*B " # " & 5 # :@ :6%*C!9= !7,6(= !7, Figure 7. Capacitance versus Voltage MOTOROLA RF DEVICE DATA η@A:6%*A=33%%=*BAD@A ( $ @A!<=A(6%*A) "# @ $ A$3 "# 4 & 8 Figure 6. Performance in Broadband Circuit & # .@ 3=>9=*B & " &# %7 5 8 η # Figure 5. Drain Efficiency versus Frequency in Broadband Circuit 8 Figure 4. Intermodulation Distortion versus Frequency in Broadband Circuit 5# @ @ $ A$3 4 .@ 3=>9=*B 5 C& :: ; & ) %:> ; "'" 6 . ; & E ) !3: 5 >6 "'# F60' # &# & C&# C C# C5 ($ % "# C5# " C# η # '" " C## " C " @ !9,9, !<= <6,, 6(' Figure 8. COFDM Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit For More Information On This Product, Go to: www.freescale.com MRF374A 7 %@ %*,=!:976,%!*A) "4 C"# η @A:6%*A=33%%=*BAD : ( $ @AA!<=A(6%*A) "4'# Freescale Semiconductor, Inc... %:@ %*,=!:976,%!*A:%,!,%!*A) " Freescale Semiconductor, Inc. "8 # C&# " C &# C# & ($ C5 "# % C5# " # :: ; & ) %:> ; "'" 6 . ; η '" " " C# C## ( $ @AA!<=A(6%*A) C& %@ %*,=!:976,%!*A) 5 %:> ; "' 6 6 "4 6 " 5 6 "# & 6 :: ; & ) . ; #4 n3?2 ; "5 " C " " Figure 9. 8–VSB Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit " Figure 10. Power Gain versus Peak Output Power in Narrowband Circuit C& # C 5 6 C# 6 C5 C5# 6 C# "' 6 :: ; & ) . ; #4 n3?2 ; " " " @ !9,9, !<= <6,, = Figure 11. Intermodulation Distortion versus Peak Output Power in Narrowband Circuit MRF374A 8 η @A:6%*A=33%%=*BAD : %:> ; & 6 C&# C## " @ !9,9, !<= <6,, = @ !9,9, !<= <6,, 6(' %:@ %*,=!:976,%!*A:%,!,%!*A) Freescale Semiconductor, Inc... η@A:6%*A=33%%=*BAD@A ( $ @A!<=A(6%*A) MRF374A TYPICAL CHARACTERISTICS 5 & :: ; & ) %:> ; 6 . ; #4 n3?2 ; " " " " @ !9,9, !<= <6,, = Figure 12. Drain Efficiency versus Peak Output Power in Narrowband Circuit MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. MRF374A TYPICAL CHARACTERISTICS VDD = 28 Vdc VDD = 32 Vdc " " :: ; & ) %:> ; 4# 6 , $ ; 54 "4 # "'# 4 " "#'# 54 "4 # "'# 4 " "#'# "# "# " " " @ !9,9, !<= <6,, = " Figure 13. Power Gain versus Peak Output Power in Broadband Circuit " " @ !9,9, !<= <6,, = Figure 14. Power Gain versus Peak Output Power in Broadband Circuit 5# :: ; & ) %:> ; 4# 6 , $ ; # 54 &# "# :: ; & ) %:> ; 4# 6 , $ ; 5 η@A:6%*A=33%%=*BAD η@A:6%*A=33%%=*BAD # G # 54 & " # " " @ !9,9, !<= <6,, = " Figure 15. Drain Efficiency versus Peak Output Power in Broadband Circuit C&# :: ; & ) %:> ; 4# 6 , $ ; C G C# G # G 4 G C5 54 G C5# C# " " " @ !9,9, !<= <6,, = Figure 17. Intermodulation Distortion versus Peak Output Power in Broadband Circuit MOTOROLA RF DEVICE DATA " " @ !9,9, !<= <6,, = Figure 16. Drain Efficiency versus Peak Output Power in Broadband Circuit %:@ %*,=!:976,%!*A:%,!,%!*A) " %:@ %*,=!:976,%!*A:%,!,%!*A) Freescale Semiconductor, Inc... :: ; & ) %:> ; 4# 6 , $ ; "4'# ( $ @AA!<=A(6%*A) ( $ @AA!<=A(6%*A) "4'# C&# :: ; & ) %:> ; 4# 6 , $ ; C G # G G C# C5 4 G C5# 54 G C# " " " @ !9,9, !<= <6,, = Figure 18. Intermodulation Distortion versus Peak Output Power in Broadband Circuit For More Information On This Product, Go to: www.freescale.com MRF374A 9 Freescale Semiconductor, Inc. . ; 54 G G ; 5 Ω . ; 54 G ; 5 Ω . ; 5# . ; 5# G ) G ) G . ; 4# . ; . ; 4# Freescale Semiconductor, Inc... . ; MRF374 MRF374A :: ; & @ %:> ; 5 6@ ; " < = :: ; & @ %:> ; 5 6@ ; " < = f MHz Zsource Ω Zload Ω f MHz Zsource Ω Zload Ω 470 5.79 + j0.97 4.54 – j2.82 845 3.33 – j2.42 4.56 – j2.86 660 4.52 – j0.50 4.21 – j3.04 860 3.03 – j2.39 4.22 – j3.16 860 3.16 – j3.73 3.86 – j3.44 875 2.73 – j3.10 3.87 – j3.52 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. %$ *1 H :0 9) , C C Z source !$ *1 H Z load Figure 19. Series Equivalent Input and Output Impedance MRF374A 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF374A 11 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS , 6 G D Q 2X , 6 L S (INSULATOR) , 6 K 2 3 4 *!,=+ "' :%=*%!*%*( 6*: ,!7=6*%*( = 6*% B"5'#@ "885' &' !*,!77%*( :%=*%!*+ %*' ' :%=*%!* % =69=: ' '4& 6<6B 3! 6E6(= !:B' B 1 (FLANGE) 4 PL B R (LID) Freescale Semiconductor, Inc... , 6 N (LID) , 6 M (INSULATOR) , 6 F C 5 E H A A T SEATING PLANE (FLANGE) DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX "'"# "'"5# '&&# '&# '"# '"4 '&" '&& '## '# '5 ' '8A '44 '4 '&& '&# '&A '5 '#4 ' '# '"&# '"# '&&4 '& '&&# '&# '"A '"#A ,B7= "+ %* "' &' ' 5' #' MILLIMETERS MIN MAX &' &8'" #'4& #'84 '5 5'#& #' #'#8 "'5 "'# '"" '"# &&'A "'8 &'&" #'#8 '# 'A "' "'8 "'& "'# '"4# '5 #'44 #'8& #'4"# #'84 'A '"A :6%* :6%* (6,= (6,= !9= CASE 375F–04 ISSUE D NI–650 Motorola reserves the right to make changes without further notice to any products herein. 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Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2003. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors MRF374A 12 MRF374A/D ◊For More Information On This Product,MOTOROLA RF DEVICE DATA Go to: www.freescale.com