Freescale Semiconductor, Inc. Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor, Inc... Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. 945 MHz, 30 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs • Typical Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 20 dB Efficiency — 41% (Two Tones) IMD — -31 dBc • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW) Output Power CASE 1265-08, STYLE 1 TO-270-2 PLASTIC MRF9030MR1 • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. • TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. • TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. CASE 1337-03, STYLE 1 TO-272-2 PLASTIC MRF9030MBR1 MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS + 15, - 0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 139 0.93 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 175 °C Symbol Max Unit RθJC 1.08 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model MRF9030MR1 MRF9030MBR1 C7 (Minimum) C6 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22-A113 Rating 3 NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 For More Information On This Product, Go to: www.freescale.com MRF9030MR1 MRF9030MBR1 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 3 3.8 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) — 0.23 0.4 Vdc gfs — 2.7 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 49 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 27 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.2 — pF Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 20 — dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 37 41 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — -13 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 20 — dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 40.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — -31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — -12 — dB OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF9030MR1 MRF9030MBR1 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 0.260″ 0.240″ 0.500″ 0.200″ 0.330″ 0.140″ 0.040″ 0.090″ 0.370″ 0.290″ 0.130″ 0.210″ x 0.060″ Microstrip x 0.060″ Microstrip x 0.100″ Microstrip x 0.270″ Microstrip x 0.270″ Microstrip x 0.270″ x 0.520″, Taper x 0.520″ Microstrip x 0.520″ Microstrip x 0.520″ Microstrip (MRF9030MR1) x 0.520″ Microstrip (MRF9030MBR1) x 0.520″ Microstrip (MRF9030MR1) x 0.520″ Microstrip (MRF9030MBR1) Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board 0.360″ x 0.270″ Microstrip 0.050″ x 0.270″ Microstrip 0.110″ x 0.060″ Microstrip 0.220″ x 0.060″ Microstrip 0.100″ x 0.060″ Microstrip 0.870″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Taconic RF-35-0300, εr = 3.5 Figure 1. 930-960 MHz Broadband Test Circuit Schematic Table 1. 930 - 960 MHz Broadband Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short Ferrite Bead, Surface Mount 95F786 Newark B2 Long Ferrite Bead, Surface Mount 95F787 Newark C1, C7, C14, C15 47 pF Chip Capacitors, B Case 100B470JP 500X ATC C2 0.6-4.5 Variable Capacitor, Gigatrim 44F3360 Newark C3, C11 3.9 pF Chip Capacitors, B Case 100B3R6BP 500X ATC C4, C12 0.8-8.0 Variable Capacitors, Gigatrim 44F3360 Newark C5, C6 6.8 pF Chip Capacitors, B Case 100B7R5JP 500X ATC C8, C16, C17 10 µF, 35 V Tantulum Chip Capacitors 93F2975 Newark C9, C10 10 pF Chip Capacitors, B Case 100B100JP 500X ATC C13 1.8 pF Chip Capacitor, B Case (MRF9030MR1) 0.6-4.5 Variable Capacitor, Gigatrim (MRF9030MBR1) 100B1R8BP 44F3360 ATC Newark C18 220 µF Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Coilcraft Inductors A04T-5 Coilcraft WB1, WB2 20 mil Brass Shim (0.250 x 0.250) RF-Design Lab RF-Design Lab PCB Etched Circuit Board 900 MHz µ250/Viper Rev 02 DSelectronics MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9030MR1 MRF9030MBR1 3 Freescale Semiconductor, Inc. CUT OUT AREA 900 MHz Rev 02 Figure 2. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MR1) CUT OUT AREA Freescale Semiconductor, Inc... MRF9030M Figure 3. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 0;; (;,;'") η ! "# $%& ! ' ( ) * ! +, -$$./0 123 $./ 45#6 7.8 0; ;( 44;'") 0;(, 4;'"#) h 0;, ((:;'<) TYPICAL CHARACTERISTICS Figure 4. Class AB Broadband Circuit Performance * ! +, = +, +, ! "# 9 ! 23 9 ! = 23 +, = = * ! +, +, +, = ! "# +, 9 ! 23 9 ! = 23 Figure 5. Power Gain versus Output Power Figure 6. Intermodulation Distortion versus Output Power ?" ?"/? &> ?"/? &> ?"/? = $%&0 ( ',4) ( ! "# * ! +, 9 ! 23 9 ! = 23 $%&0 ( ',4) ( 0;; (;,;'") = = ! "# * ! +, 9 ! 23 η $%&0 ( ',4) ( $%&0 ( ',4) ,= Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com η0;,;((:;'<) 0;; (;,;'") 0 (,;4;'"#) = 0 (,;4;'"#) Freescale Semiconductor, Inc... 90 (*(: '23) MRF9030MR1 MRF9030MBR1 5 0;; (;,;'") ! "# * ! +, 9 ! 23 9 ! = 23 η = η0;,;((:;'<) 0 (,;4;'"#) Freescale Semiconductor, Inc. $%&0 ( ',4) ( Freescale Semiconductor, Inc... Figure 9. Power Gain, Efficiency and IMD versus Output Power MRF9030MR1 MRF9030MBR1 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. $ ! Ω $%?#/ 9 ! 23 A$5" 9 ! 23 9 ! 23 9 ! 23 ! 0 * ! +,0 $%& ! 5&& ' ( ) f MHz Zsource Ω Zload Ω 930 1.07 + j0.160 3.53 - j0.20 945 1.14 + j0.385 3.41 - j0.24 960 1.17 + j0.170 3.60 - j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload $&/@ = Test circuit impedance as measured from drain to ground. A$5" -5 #>$/. B5/" $. &?5"/$99 B/&-//. 857.0 $%&%& $-/?0 "?57. /997#7/.#C 5." 7.&/?+$"%A5&7$. "7&$?&7$.= %&%& 5&#>7.8 /&-$?1 /D7#/ ."/? /& .%& 5&#>7.8 /&-$?1 Z source Z load Figure 10. Series Equivalent Input and Output Impedance (MRF9030MR1) MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9030MR1 MRF9030MBR1 7 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. $ ! Ω A$5" $%?#/ 9 ! 23 9 ! 23 9 ! 23 9 ! 23 ! 0 * ! +,0 $%& ! 5&& ' ( ) f MHz Zsource Ω Zload Ω 930 1.0 - j0.18 3.05 - j0.09 945 1.0 - j0.10 3.00 - j0.07 960 1.0 - j0.03 2.95 - j0.03 Zsource = Test circuit impedance as measured from gate to ground. Zload $&/@ = Test circuit impedance as measured from drain to ground. A$5" -5 #>$/. B5/" $. &?5"/$99 B/&-//. 857.0 $%&%& $-/?0 "?57. /997#7/.#C 5." 7.&/?+$"%A5&7$. "7&$?&7$.= %&%& 5&#>7.8 /&-$?1 /D7#/ ."/? /& .%& 5&#>7.8 /&-$?1 Z source Z load Figure 11. Series Equivalent Input and Output Impedance (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9030MR1 MRF9030MBR1 9 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS E1 B 2X E4 555 D Freescale Semiconductor, Inc... 555 2X D3 , 2X , PIN ONE ID D1 b1 E A E5 E3 PIN 2 D2 PIN 3 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ EXPOSED HEATSINK AREA PIN 1 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 aaa BOTTOM VIEW F c1 H DATUM PLANE (4@ = (4@ 2= = ( ( (44 , (,(4 ( ,4( :== = , ,( 2 4 ,( , (, , 4 ( 2 2( (, 2(( 2( (, (E4 2( ,4 : , 2( 2( , (= = (44 “F , “(F ( 4= ,,( 4 4 = ( 4(= (44 “F , “(F ( 4,2 , ,( ((6 ( , , ,( 2= = (4 B (4 ( ,, 4= ,,( ,, 4 42, ( = , (E(44 2( B (4 , ,E ,(, = = ,4 , , ( ((( , , ,( 2= = (4 , , (4 2 ( “GF := = (44 “F , “(F ( 4= ,,( 4 4 = ( 4(= (44 “F , “(F ( 4,2 , ,( ((6 ( , , ,( = ZONE J A A1 INCHES MIN MAX = = = = = = = = = = = = = = = = = = = = = = = = = = =;4 = = = = = MILLIMETERS MIN MAX = = = = = = = = = = = = = = = = = = = = = = = = = = =;4 = = = = = 4:( @ = , = ,( = 4( 2X A2 NOTE 7 E2 E5 D CASE 1265-08 ISSUE G TO-270-2 PLASTIC MRF9030MR1 MRF9030MR1 MRF9030MBR1 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 2X 555 A E1 B r1 , GATE LEAD Freescale Semiconductor, Inc... D1 2X b1 555 ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ DRAIN LEAD D , 2 E DRAIN ID PIN 3 1 NOTE 8 E2 VIEW Y-Y c1 H F ZONE "J" DATUM PLANE A A1 A2 7 E2 Y Y C SEATING PLANE 4:( @ = , = ,( = 4( CASE 1337-03 ISSUE B TO-272-2 PLASTIC MRF9030MBR1 MOTOROLA RF DEVICE DATA (4@ = (4@ 2= = ( ( (44 , (,(4 ( ,4( :=0 = = , ,( 2 4 ,( , 2( (, , 4 ( 2 2( (, 2(( 2( (, (E4 2( ,4 : , 2( 2( , (= = (44 FF , F(F ( 4= ,,( 4 4 = ( 4(= (44 FF , F(F ( 4,2 , ,( ((( , , ,( 2= = (4 FBF (4 ( ,, 4= ,,( ,, 4 42, ( = , (E(44 2( FBF (4 , ,E ,(, = = ,4 , , ( ((( , , ,( 2= = (4 , , (4 2 ( FGF := = 442,2 ( (4(4 2( (E 4( ,(, 2( 2(, 4= DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa For More Information On This Product, Go to: www.freescale.com INCHES MIN MAX = = = = = = = = =;4 = = = = = = =;4 = = = = = = = MILLIMETERS MIN MAX = = = = = = = = =;4 = = = = = = =;4 = = = = = = = MRF9030MR1 MRF9030MBR1 11 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. 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Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF9030MR1 MRF9030MBR1 12 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, Go to: www.freescale.com MRF9030M/D