Freescale Semiconductor, Inc. Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc... N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts, IDQ = 2.0 A, 8K Mode, 64 QAM Output Power — 45 Watts Avg. Power Gain ≥ 16.7 dB Efficiency ≥ 21% ACPR ≤ –58 dBc • Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts, IDQ = 2.0 A Output Power — 80 Watts Avg. Power Gain ≥ 16.5 dB Efficiency ≥ 27.5% IMD ≤ –31.3 dBc • Internally Input and Output Matched for Ease of Use • Integrated ESD Protection • Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT OFDM Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. 470 – 860 MHz, 240 W, 32 V LATERAL N–CHANNEL RF POWER MOSFET CASE 375G–04, STYLE 1 NI–860C3 MAXIMUM RATINGS (1) Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS – 0.5, +15 Vdc Drain Current – Continuous ID 17 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 486 2.78 W W/°C Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Max Unit RθJC 0.36 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model 7 (Minimum) (1) Each side of device measured separately. NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µA) VGS(th) — 2.8 — Vdc Gate Quiescent Voltage (VDS = 32 Vdc, ID = 225 mA) VGS(Q) — 3.5 — Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 3 A) VDS(on) — 0.27 — Vdc Crss — 3.2 — pF OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID =10 µA) Freescale Semiconductor, Inc... ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL CHARACTERISTICS (In DVBT OFDM Single–Channel, Narrowband Fixture, 50 ohm system)(2) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA, f = 860 MHz) Gps 16.5 18.2 — dB Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA, f = 860 MHz) η 21 22.9 — % Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA, f = 860 MHz) ACPR — –59.2 –57 dBc TYPICAL CHARACTERISTICS (In DVBT OFDM Single–Channel, Broadband Fixture, 50 ohm system)(2) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Gps Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz η Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz ACPR dB — — — — — 17.6 17.6 17.4 17.4 16.8 — — — — — % — — — — — 23.5 25.8 23.0 22.7 21.3 — — — — — dBc — — — — — –59.3 –59.3 –58.7 –58.7 –58.1 — — — — — (1) Each side of device measured separately. (2) Measured in push–pull configuration. MRF377 MRF377R3 MRF377R5 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS (In ATSC 8VSB Single–Channel, Broadband Fixture, 50 ohm system)(2) Freescale Semiconductor, Inc... Characteristic Symbol Common Source Power Gain (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Gps Drain Efficiency (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz η Intermodulation Distortion (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz IMD Min Typ Max Unit dB — — — — — 17.5 17.5 17.2 17.2 16.6 — — — — — % — — — — — 31.0 34.3 30.1 29.6 27.8 — — — — — dBc — — — — — 31.7 32.7 32.9 34.2 35.4 — — — — — (2) Measured in push–pull configuration. MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 3 Freescale Semiconductor, Inc. Table 1. 845–875 MHz Narrowband Test Circuit Component Designations and Values Description Value, P/N or DWG Manufacturer Ferrite Beads, Surface Mount, 11 Ω (0805) 2508051107Y0 Fair–Rite Balun 1, Balun 2 0.8–1GHz Xinger Balun 3A412 Anaran C1 33 pF Chip Capacitor (0805) 08055J330JBT AVX / Kyocera C2 2.7 pF Chip Capacitor (0603) 06035J2R7BBT AVX / Kyocera C3 12 pF Chip Capacitor (0805) 08051J120GBT AVX / Kyocera C4, C5 6.8 pF Chip Capacitors (0805) 08051J6R8BBT AVX / Kyocera C6 2.7 pF Chip Capacitor (0805) 0805J2R7BBT AVX / Kyocera C7, C8, C9, C10 3.3 pF Chip Capacitors (0805) 08051J3R3BBT AVX / Kyocera C11, C12 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC3810 Kemet C13, C14, C15, C16 0.01 µF, 100 V Chip Capacitors C1825C103J1GAC Kemet C17, C18 0.56 µF, 50 V Chip Capacitors C1825C564J5RAC Kemet C19, C20 10 µF, 50 V Tantalum Chip Capacitors 522Z050/100MTRE Tecate C21, C22, C23, C24 47 µF, 16 V Tantalum Chip Capacitors TPSD476K016R0150 AVX / Kyocera C25, C26 470 µF, 63 V Electrolytic Capacitors NACZF471M63V (18x22) Nippon L1 12 nH Inductor (0603) 0603HC–12NXJB CoilCraft L2 7.15 nH Inductor 1606–7 CoilCraft L3, L4 10 nH Inductor (0603) 0603HC–10NXJB CoilCraft R1, R2 24 Ω, 1/8 W, 5% Chip Resistors (1206) WB1, WB2, WB3, WB4 Brass Wear Shims PCB Arlon 30 mil, εr = 2.56 DS1152 DS Electronics Freescale Semiconductor, Inc... Part B1, B2 !" " Figure 1. 845–875 MHz Narrowband Test Circuit Component Layout MRF377 MRF377R3 MRF377R5 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL NARROWBAND CHARACTERISTICS $% 6 2 13 /4 2 #! 5 2 6 78( 5 2 6 78 6 /4 2 #! #! #! Figure 3. Third Order Intermodulation Distortion versus Output Power η(!/0,//,0:-;. 1 )1 9 )1 9 )1 2 13 /4 2 #! 5 2 6 78( 5 2 6 78 2 13 /4 2 #! 5 2 6 78( 5 2 6 78 #! &'( )*+&*+ &), -!++. &,& Figure 2. Two–Tone Power Gain versus Output Power #! 2 13 5 2 6 78( 5 2 6 78 &'( )*+&*+ &), -!++. &,& /( /0+,)*!+/)0/+)+/)0-13. η &'( )*+&*+ &), -!++. &,& &'( )*+&*+ &), -!++. &,& Figure 4. Intermodulation Distortion Products versus Output Power Figure 5. Two–Tone Drain Efficiency versus Output Power $% $% (&),!/0-1. Freescale Semiconductor, Inc... η 2 13 /4 2 #! 5 2 6 78( 5 2 6 78 / η(!/0,//,0:-;. /( /0+,)*!+/)0/+)+/)0-13. $% (&),!/0-1. 6 /( /0+,)*!+/)0/+)+/)0-13. &'( )*+&*+ &), -!++. &,& Figure 6. Power Gain, Efficiency and IMD versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 5 Freescale Semiconductor, Inc. 5 2 78 A' 1 5 2 78 A%'3 5 2 78 Freescale Semiconductor, Inc... 5 2 78 A' 2 Ω 2 ( /4 2 < #!( &' 2 !"=6( + ) f MHz Zload Ω Zsource Ω 845 4.66 – j5.90 8.59 – j4.22 860 4.38 – j5.64 9.36 – j4.95 875 3.93 – j5.33 9.39 – j6.06 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. /$ 39= 0>'? @ "3 *1 +% Z source )$ 39= 0>'? @ Z load Figure 7. 845–875 MHz Narrowband Series Equivalent Input and Output Impedance MRF377 MRF377R3 MRF377R5 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Table 2. 470—860 MHz Broadband Test Circuit Component Designations and Values Freescale Semiconductor, Inc... Part Description Value, P/N or DWG Manufacturer B1, B2 Ferrite Beads, Surface Mount, 30 Ω (0603) 2506033007Y0 Fair–Rite Balun 1, Balun 2 Rogers 3.006, εr = 6.06, 1 oz Cu DS1046 DS Electronics C1 12 pF Chip Capacitor (0603) 06035J120GBT AVX / Kyocera C2, C5 12 pF Chip Capacitors (0805) 08051J120GBT AVX / Kyocera C3 3.9 pF Chip Capacitor (0805) 08051J3R9BBT AVX / Kyocera C4, C7, C12, C15, C17 8.2 pF Chip Capacitors (0805) 08051J8R2BBT AVX / Kyocera C6 3.3 pF Chip Capacitor (0805) 08051J3R3BBT AVX / Kyocera C8 0.4–2.5 pF Variable Capacitor 27283PC Gigatronics C9, C10 3.3 pF Chip Capacitors (0603) 06035J3R3BBT AVX / Kyocera C11, C14 10 pF Chip Capacitor (0805) 08051J100GBT AVX / Kyocera C13 4.7 pF Chip Capacitor (0805) 08051J4R7BBT AVX / Kyocera C16 2.2 pF Chip Capacitor (0603) 06035J2R2BBT AVX / Kyocera C18 2.2 pF Chip Capacitor (0805) 08051J2R2BBT AVX / Kyocera C19, C20, C21, C22 47 µF, 16 V Tantalum Chip Capacitors TPSD476K016R0150 AVX C23, C26 2.2 µF, 50 V Ceramic Chip Capacitors C1825C225J5RAC3810 Kemet C24, C25, C27, C29 0.01 µF, 100 V Ceramic Chip Capacitors C1825C103J1GAC Kemet C28, C30 0.56 µF, 50 V Ceramic Chip Capacitors C1825C564J5GAC Kemet C31, C32 10 µF, 50 V Chip Capacitors 522Z–050/100MTRE Tecate C33, C34 470 µF, 63 V Electrolytic Capacitors SME63VB471M12X25LL United Chemi–Con L1, L2 15 nH Inductors (0603) L0603150GGW003 AVX L3, L4 12 nH Inductors (0603) 0603HC–12NHJBU CoilCraft L5, L6 8 nH Coil Inductors A03T–5 CoilCraft L7 22 nH Coil Inductor B07T–5 CoilCraft L8 18.5 nH Coil Inductor A05T–5 CoilCraft R1, R2 12.1 Ω, 1/16 W, 1% Chip Resistors (0603) PCB Gate, PCB Drain PCB Motherboard w/Integrated Daughterboard, Rogers 3003, εr = 3.03, 0.5 oz Cu DS1047 DS Electronics MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... " " Multilayer Balun Mounting Detail +'$%1 > *$%1 '> > Figure 8. 470–860 MHz Broadband Test Circuit Component Layout MRF377 MRF377R3 MRF377R5 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. $% (&),!/0-1. $% η 2 13( &' 2 -!"=6.( /4 2 #! C '1 + ) 4! '1 ' D#E'% !& !&(!B!,0+7!00,&),!+/) η(!/0,//,0:-;. TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS Figure 9. Single–Channel DVBT OFDM Broadband Performance 78 2 13( /4 2 #! C '1 ) 4! '1 ' D#E'% 78 78 6 78 78 78 78 78 &'( )*+&*+ &), -!++. !6 Figure 11. Single–Channel DVBT OFDM Broadband Performance Drain Efficiency versus Output Power 6 78 78 78 78 78 -1. &'( )*+&*+ &), -!++. !6 Figure 10. Single–Channel DVBT OFDM Broadband Performance Power Gain versus Output Power !&(!B!,0+7!00,&),!+/)-13. 78 78 6 2 13 /4 2 #! C '1 ) 4! '1 ' D#E'% η(!/0,//,0:-;. 6 $% (&),!/0-13. Freescale Semiconductor, Inc... 5( ,4*,0: -78. 2 13 /4 2 #! C '1 + ) 4! '1 ' D#E'% 78 ?78 ?78 &'( )*+&*+ &), -!++. !6 Figure 12. Single–Channel DVBT OFDM Broadband Performance Adjacent Channel Power Ratio versus Output Power MOTOROLA RF DEVICE DATA 5( ,4*,0: -78. Figure 13. 8K Mode DVBT OFDM Spectrum For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 9 Freescale Semiconductor, Inc. TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS $% $% (&),!/0-1. η 2 13 &' 2 -!"=6. /4 2 #! !+ !& !&(!B!,0+7!00,&),!+/) η(!/0,//,0:-;. Figure 14. Single–Channel ATSC 8VSB Broadband Performance 78 78 2 13 /4 2 #! !+ 78 6 78 2 13 /4 2 #! !+ η(!/0,//,0:-;. 6 $% (&),!/0-13. 78 6 78 78 78 78 78 &'( )*+&*+ &), -!++. !6 &'( )*+&*+ &), -!++. !6 Figure 15. Single–Channel ATSC 8VSB Broadband Performance Power Gain versus Output Power Figure 16. Single–Channel ATSC 8VSB Broadband Performance Drain Efficiency versus Output Power 78 78 78 78 / /* 78 2 13 /4 2 #! !+ 53 &' -1. !&(!B!,0+7!00,&),!+/)-13. Freescale Semiconductor, Inc... 5( ,4*,0: -78. 6 6 6 78 )55% 6 6 6 78 )55% 6 6 6 6 &'( )*+&*+ &), -!++. !6 5( ,4*,0: -78. Figure 17. Single–Channel ATSC 8VSB Broadband Performance Adjacent Channel Power Ratio versus Output Power Figure 18. ATSC 8VSB Spectrum MRF377 MRF377R3 MRF377R5 10 6 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 5 2 78 5 2 78 A' 1 A%'3 5 2 78 A' 2 Ω A' 2 Ω Freescale Semiconductor, Inc... 5 2 78 )$#81 5' 2 ( /4 2 < #!( &' 2 !"=6( + ) f MHz Zload Ω Zsource Ω 470 5.79 – j2.40 6.21 – j1.69 560 6.63 – j2.63 5.66 – j1.12 660 6.57 – j4.03 6.76 – j1.00 760 6.67 – j4.55 6.57 – j1.91 860 5.34 – j6.28 7.37 – j5.45 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. /$ 39= 0>'? @ "3 *1 +% Z source )$ 39= 0>'? @ Z load Figure 19. 470—860 MHz Broadband Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF377 MRF377R3 MRF377R5 11 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 4 G R + ! Q EEE 2X L 333 J + ! (LID) 2 1 B 0)+,F 6 )0+)/0 /,0/)0F /076 6 /0+,&,+ /,0/)0 !0 +),!0, &, !, :66 6 /,0/)0 7 +) , ,!*, 6 -6. !!: ) &!C!, ):6 6 ,),0, )+ ,0+, /,0/)0 ) 6 -6. !, )0 ,6 (FLANGE) 5 4X S K (INSULATOR) EEE Freescale Semiconductor, Inc... + ! 3 4X 4 B D EEE 333 + ! + ! DIM A B C D E F G H J K L M N Q R S bbb ccc F N (LID) E M H EEE A C (INSULATOR) + ! T SEATING PLANE INCHES MIN MAX 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6, 6, +:, F &/0 6 6 6 6 6 A MILLIMETERS MIN MAX 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6, 6, !/0 !/0 !+, !+, )*, CASE 375G–04 ISSUE E NI–860C3 Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1–800–521–6274 or 480–768–2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu, Minato–ku, Tokyo 106–8573, Japan 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852–26668334 HOME PAGE: http://motorola.com/semiconductors MRF377 MRF377R3 MRF377R5 12 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, Go to: www.freescale.com MRF377/D