MOTOROLA MRF377R3

Freescale Semiconductor, Inc.
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by MRF377/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Freescale Semiconductor, Inc...
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in 32
volt digital television transmitter equipment.
• Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts,
IDQ = 2.0 A, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Efficiency ≥ 21%
ACPR ≤ –58 dBc
• Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts,
IDQ = 2.0 A
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Efficiency ≥ 27.5%
IMD ≤ –31.3 dBc
• Internally Input and Output Matched for Ease of Use
• Integrated ESD Protection
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
470 – 860 MHz, 240 W, 32 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375G–04, STYLE 1
NI–860C3
MAXIMUM RATINGS (1)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
– 0.5, +15
Vdc
Drain Current – Continuous
ID
17
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
486
2.78
W
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
0.36
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Class
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
7 (Minimum)
(1) Each side of device measured separately.
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2003
For More Information On This Product,
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MRF377 MRF377R3 MRF377R5
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µA)
VGS(th)
—
2.8
—
Vdc
Gate Quiescent Voltage
(VDS = 32 Vdc, ID = 225 mA)
VGS(Q)
—
3.5
—
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 A)
VDS(on)
—
0.27
—
Vdc
Crss
—
3.2
—
pF
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 µA)
Freescale Semiconductor, Inc...
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS (In DVBT OFDM Single–Channel, Narrowband Fixture, 50 ohm system)(2)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
Gps
16.5
18.2
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
η
21
22.9
—
%
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
ACPR
—
–59.2
–57
dBc
TYPICAL CHARACTERISTICS (In DVBT OFDM Single–Channel, Broadband Fixture, 50 ohm system)(2)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
η
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ACPR
dB
—
—
—
—
—
17.6
17.6
17.4
17.4
16.8
—
—
—
—
—
%
—
—
—
—
—
23.5
25.8
23.0
22.7
21.3
—
—
—
—
—
dBc
—
—
—
—
—
–59.3
–59.3
–58.7
–58.7
–58.1
—
—
—
—
—
(1) Each side of device measured separately.
(2) Measured in push–pull configuration.
MRF377 MRF377R3 MRF377R5
2
MOTOROLA RF DEVICE DATA
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TYPICAL CHARACTERISTICS (In ATSC 8VSB Single–Channel, Broadband Fixture, 50 ohm system)(2)
Freescale Semiconductor, Inc...
Characteristic
Symbol
Common Source Power Gain
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
Drain Efficiency
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
η
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
IMD
Min
Typ
Max
Unit
dB
—
—
—
—
—
17.5
17.5
17.2
17.2
16.6
—
—
—
—
—
%
—
—
—
—
—
31.0
34.3
30.1
29.6
27.8
—
—
—
—
—
dBc
—
—
—
—
—
31.7
32.7
32.9
34.2
35.4
—
—
—
—
—
(2) Measured in push–pull configuration.
MOTOROLA RF DEVICE DATA
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MRF377 MRF377R3 MRF377R5
3
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Table 1. 845–875 MHz Narrowband Test Circuit Component Designations and Values
Description
Value, P/N or DWG
Manufacturer
Ferrite Beads, Surface Mount, 11 Ω (0805)
2508051107Y0
Fair–Rite
Balun 1, Balun 2
0.8–1GHz Xinger Balun
3A412
Anaran
C1
33 pF Chip Capacitor (0805)
08055J330JBT
AVX / Kyocera
C2
2.7 pF Chip Capacitor (0603)
06035J2R7BBT
AVX / Kyocera
C3
12 pF Chip Capacitor (0805)
08051J120GBT
AVX / Kyocera
C4, C5
6.8 pF Chip Capacitors (0805)
08051J6R8BBT
AVX / Kyocera
C6
2.7 pF Chip Capacitor (0805)
0805J2R7BBT
AVX / Kyocera
C7, C8, C9, C10
3.3 pF Chip Capacitors (0805)
08051J3R3BBT
AVX / Kyocera
C11, C12
2.2 µF, 50 V Chip Capacitors
C1825C225J5RAC3810
Kemet
C13, C14, C15, C16
0.01 µF, 100 V Chip Capacitors
C1825C103J1GAC
Kemet
C17, C18
0.56 µF, 50 V Chip Capacitors
C1825C564J5RAC
Kemet
C19, C20
10 µF, 50 V Tantalum Chip Capacitors
522Z050/100MTRE
Tecate
C21, C22, C23, C24
47 µF, 16 V Tantalum Chip Capacitors
TPSD476K016R0150
AVX / Kyocera
C25, C26
470 µF, 63 V Electrolytic Capacitors
NACZF471M63V (18x22)
Nippon
L1
12 nH Inductor (0603)
0603HC–12NXJB
CoilCraft
L2
7.15 nH Inductor
1606–7
CoilCraft
L3, L4
10 nH Inductor (0603)
0603HC–10NXJB
CoilCraft
R1, R2
24 Ω, 1/8 W, 5% Chip Resistors (1206)
WB1, WB2, WB3, WB4
Brass Wear Shims
PCB
Arlon 30 mil, εr = 2.56
DS1152
DS Electronics
Freescale Semiconductor, Inc...
Part
B1, B2
!"
"
Figure 1. 845–875 MHz Narrowband Test Circuit Component Layout
MRF377 MRF377R3 MRF377R5
4
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TYPICAL NARROWBAND CHARACTERISTICS
$%
6
2 13
/4 2 #!
5 2 6 78( 5 2 6 78
6
/4 2 #!
#!
#!
Figure 3. Third Order Intermodulation Distortion
versus Output Power
η(!/0,//,0:-;.
1 )1
9 )1
9 )1
2 13
/4 2 #!
5 2 6 78( 5 2 6 78
2 13
/4 2 #!
5 2 6 78( 5 2 6 78
#!
&'( )*+&*+ &), -!++. &,&
Figure 2. Two–Tone Power Gain versus
Output Power
#!
2 13
5 2 6 78( 5 2 6 78
&'( )*+&*+ &), -!++. &,&
/( /0+,)*!+/)0/+)+/)0-13.
η
&'( )*+&*+ &), -!++. &,&
&'( )*+&*+ &), -!++. &,&
Figure 4. Intermodulation Distortion Products
versus Output Power
Figure 5. Two–Tone Drain Efficiency versus
Output Power
$%
$% (&),!/0-1.
Freescale Semiconductor, Inc...
η
2 13
/4 2 #!
5 2 6 78( 5 2 6 78
/
η(!/0,//,0:-;.
/( /0+,)*!+/)0/+)+/)0-13.
$% (&),!/0-1.
6
/( /0+,)*!+/)0/+)+/)0-13.
&'( )*+&*+ &), -!++. &,&
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
MOTOROLA RF DEVICE DATA
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MRF377 MRF377R3 MRF377R5
5
Freescale Semiconductor, Inc.
5 2 78
A'
1
5 2 78
A%'3
5 2 78
Freescale Semiconductor, Inc...
5 2 78
A' 2 Ω
2 ( /4 2 < #!( &' 2 !"=6( + )
f
MHz
Zload
Ω
Zsource
Ω
845
4.66 – j5.90
8.59 – j4.22
860
4.38 – j5.64
9.36 – j4.95
875
3.93 – j5.33
9.39 – j6.06
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
/$
39=
0>'?
@
"3
*1
+%
Z
source
)$
39=
0>'?
@
Z
load
Figure 7. 845–875 MHz Narrowband Series Equivalent Input and Output Impedance
MRF377 MRF377R3 MRF377R5
6
MOTOROLA RF DEVICE DATA
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Table 2. 470—860 MHz Broadband Test Circuit Component Designations and Values
Freescale Semiconductor, Inc...
Part
Description
Value, P/N or DWG
Manufacturer
B1, B2
Ferrite Beads, Surface Mount, 30 Ω (0603)
2506033007Y0
Fair–Rite
Balun 1, Balun 2
Rogers 3.006, εr = 6.06, 1 oz Cu
DS1046
DS Electronics
C1
12 pF Chip Capacitor (0603)
06035J120GBT
AVX / Kyocera
C2, C5
12 pF Chip Capacitors (0805)
08051J120GBT
AVX / Kyocera
C3
3.9 pF Chip Capacitor (0805)
08051J3R9BBT
AVX / Kyocera
C4, C7, C12, C15, C17
8.2 pF Chip Capacitors (0805)
08051J8R2BBT
AVX / Kyocera
C6
3.3 pF Chip Capacitor (0805)
08051J3R3BBT
AVX / Kyocera
C8
0.4–2.5 pF Variable Capacitor
27283PC
Gigatronics
C9, C10
3.3 pF Chip Capacitors (0603)
06035J3R3BBT
AVX / Kyocera
C11, C14
10 pF Chip Capacitor (0805)
08051J100GBT
AVX / Kyocera
C13
4.7 pF Chip Capacitor (0805)
08051J4R7BBT
AVX / Kyocera
C16
2.2 pF Chip Capacitor (0603)
06035J2R2BBT
AVX / Kyocera
C18
2.2 pF Chip Capacitor (0805)
08051J2R2BBT
AVX / Kyocera
C19, C20, C21, C22
47 µF, 16 V Tantalum Chip Capacitors
TPSD476K016R0150
AVX
C23, C26
2.2 µF, 50 V Ceramic Chip Capacitors
C1825C225J5RAC3810
Kemet
C24, C25, C27, C29
0.01 µF, 100 V Ceramic Chip Capacitors
C1825C103J1GAC
Kemet
C28, C30
0.56 µF, 50 V Ceramic Chip Capacitors
C1825C564J5GAC
Kemet
C31, C32
10 µF, 50 V Chip Capacitors
522Z–050/100MTRE
Tecate
C33, C34
470 µF, 63 V Electrolytic Capacitors
SME63VB471M12X25LL
United Chemi–Con
L1, L2
15 nH Inductors (0603)
L0603150GGW003
AVX
L3, L4
12 nH Inductors (0603)
0603HC–12NHJBU
CoilCraft
L5, L6
8 nH Coil Inductors
A03T–5
CoilCraft
L7
22 nH Coil Inductor
B07T–5
CoilCraft
L8
18.5 nH Coil Inductor
A05T–5
CoilCraft
R1, R2
12.1 Ω, 1/16 W, 1% Chip Resistors (0603)
PCB Gate, PCB Drain
PCB Motherboard w/Integrated Daughterboard,
Rogers 3003, εr = 3.03, 0.5 oz Cu
DS1047
DS Electronics
MOTOROLA RF DEVICE DATA
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MRF377 MRF377R3 MRF377R5
7
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Freescale Semiconductor, Inc...
"
"
Multilayer Balun Mounting Detail
+'$%1 >
*$%1 '> >
Figure 8. 470–860 MHz Broadband Test Circuit Component Layout
MRF377 MRF377R3 MRF377R5
8
MOTOROLA RF DEVICE DATA
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$% (&),!/0-1.
$%
η
2 13( &' 2 -!"=6.( /4 2 #!
C '1 + )
4! '1
'
D#E'%
!&
!&(!B!,0+7!00,&),!+/)
η(!/0,//,0:-;.
TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS
Figure 9. Single–Channel DVBT OFDM
Broadband Performance
78
2 13( /4 2 #!
C '1 )
4! '1
'
D#E'%
78
78
6
78
78
78
78
78
&'( )*+&*+ &), -!++. !6
Figure 11. Single–Channel DVBT OFDM
Broadband Performance Drain Efficiency versus
Output Power
6 78
78
78
78
78
-1.
&'( )*+&*+ &), -!++. !6
Figure 10. Single–Channel DVBT OFDM Broadband
Performance Power Gain versus Output Power
!&(!B!,0+7!00,&),!+/)-13.
78
78
6
2 13
/4 2 #!
C '1 )
4! '1
'
D#E'%
η(!/0,//,0:-;.
6
$% (&),!/0-13.
Freescale Semiconductor, Inc...
5( ,4*,0: -78.
2 13
/4 2 #!
C '1 + )
4!
'1
'
D#E'%
78
?78 ?78 &'( )*+&*+ &), -!++. !6
Figure 12. Single–Channel DVBT OFDM Broadband Performance
Adjacent Channel Power Ratio versus Output Power
MOTOROLA RF DEVICE DATA
5( ,4*,0: -78.
Figure 13. 8K Mode DVBT OFDM Spectrum
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MRF377 MRF377R3 MRF377R5
9
Freescale Semiconductor, Inc.
TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS
$%
$% (&),!/0-1.
η
2 13
&' 2 -!"=6.
/4 2 #!
!+ !&
!&(!B!,0+7!00,&),!+/)
η(!/0,//,0:-;.
Figure 14. Single–Channel ATSC 8VSB
Broadband Performance
78
78
2 13
/4 2 #!
!+ 78
6
78
2 13
/4 2 #!
!+ η(!/0,//,0:-;.
6
$% (&),!/0-13.
78
6
78
78
78
78
78
&'( )*+&*+ &), -!++. !6
&'( )*+&*+ &), -!++. !6
Figure 15. Single–Channel ATSC 8VSB Broadband
Performance Power Gain versus Output Power
Figure 16. Single–Channel ATSC 8VSB Broadband
Performance Drain Efficiency versus Output Power
78
78
78
78
/
/*
78
2 13
/4 2 #!
!+ 53
&'
-1.
!&(!B!,0+7!00,&),!+/)-13.
Freescale Semiconductor, Inc...
5( ,4*,0: -78.
6 6
6 78
)55%
6 6
6 78
)55%
6
6
6
6
&'( )*+&*+ &), -!++. !6
5( ,4*,0: -78.
Figure 17. Single–Channel ATSC 8VSB Broadband Performance
Adjacent Channel Power Ratio versus Output Power
Figure 18. ATSC 8VSB Spectrum
MRF377 MRF377R3 MRF377R5
10
6
6
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
5 2 78
5 2 78
A'
1
A%'3
5 2 78
A' 2 Ω
A' 2 Ω
Freescale Semiconductor, Inc...
5 2 78
)$#81 5' 2 ( /4 2 < #!( &' 2 !"=6( + )
f
MHz
Zload
Ω
Zsource
Ω
470
5.79 – j2.40
6.21 – j1.69
560
6.63 – j2.63
5.66 – j1.12
660
6.57 – j4.03
6.76 – j1.00
760
6.67 – j4.55
6.57 – j1.91
860
5.34 – j6.28
7.37 – j5.45
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
/$
39=
0>'?
@
"3
*1
+%
Z
source
)$
39=
0>'?
@
Z
load
Figure 19. 470—860 MHz Broadband Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
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MRF377 MRF377R3 MRF377R5
11
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
4
G
R
+ !
Q
EEE
2X
L
333
J
+ !
(LID)
2
1
B
0)+,F
6 )0+)/0 /,0/)0F /076
6 /0+,&,+ /,0/)0 !0 +),!0,
&, !, :66
6 /,0/)0 7 +) , ,!*, 6 -6.
!!: ) &!C!, ):6
6 ,),0, )+ ,0+, /,0/)0
) 6 -6. !, )0 ,6
(FLANGE)
5
4X
S
K
(INSULATOR)
EEE
Freescale Semiconductor, Inc...
+ !
3
4X
4
B
D
EEE
333
+ !
+ !
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
R
S
bbb
ccc
F
N
(LID)
E
M
H
EEE
A
C
(INSULATOR)
+ !
T
SEATING
PLANE
INCHES
MIN
MAX
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6,
6,
+:, F
&/0 6
6
6
6
6
A
MILLIMETERS
MIN
MAX
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6,
6,
!/0
!/0
!+,
!+,
)*,
CASE 375G–04
ISSUE E
NI–860C3
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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E Motorola Inc. 2003
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MRF377 MRF377R3 MRF377R5
12
MOTOROLA RF DEVICE DATA
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MRF377/D