MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET Freescale Semiconductor, Inc... Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact. • Typical Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency — 50% • Designed for Maximum Gain and Insertion Phase Flatness CASE 978 - 03 PLASTIC PFP - 16 • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. PIN CONNECTIONS N.C. N.C. 1 16 DRAIN 1−1 2 15 DRAIN 1−2 GATE1 3 14 DRAIN 2−1 N.C. 4 13 DRAIN 2−2 GATE2 5 12 N.C. N.C. 6 11 DRAIN 3−1 GATE3 N.C. 7 8 10 9 DRAIN 3−2 N.C. (Top View) NOTE: Exposed backside flag is source terminal for transistors. MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, + 15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 Watts Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 150 °C Symbol Value Unit RθJC 12 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case, Single Transistor NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF9002R2 1 Freescale Semiconductor, Inc. MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22 - A113 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 µAdc) VGS(th) 2.4 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) VGS(Q) 3 — 5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.1 Adc) VDS(on) — 0.3 — Vdc Gps 15 18 — dB Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) η 35 50 — % Input Return Loss @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) IRL — - 15 -9 dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) P1dB 34 37 — dBm ON CHARACTERISTICS Freescale Semiconductor, Inc... FUNCTIONAL TESTS (Per Transistor in Motorola Test Fixture, 50 ohm system) Common - Source Amplifier Power Gain @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 2 W CW, IDQ = 25 mA, f = 960.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) MRF9002R2 2 Ψ No Degradation In Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. VGS1 + C7 Z1 RF1 INPUT Z2 R1 DUT Z4 Z5 Z3 C16 C1 + C9 Z6 RF2 INPUT R2 VDS2 + C10 L5 L2 Z7 Z9 Z10 Z8 C18 C4 RF2 OUTPUT C13 C3 VGS3 + C11 Z11 RF3 INPUT C2 RF1 OUTPUT C14 VGS2 Freescale Semiconductor, Inc... L1 VDS1 + C8 L4 Z12 L3 R3 VDS3 + C12 L6 Z14 Z15 Z13 C17 C6 RF3 OUTPUT C15 C5 Figure 1. MRF9002R2 Broadband Test Circuit Schematic Table 1. MRF9002R2 Broadband Test Circuit Component Designations and Values Designators Description C1 - C6 33 pF Chip Capacitors (0805) C7 - C12 1.0 µF, 35 V Tantalum Capacitors, B Case, Kemet C13 8.2 pF Chip Capacitor (0805) C14, C15 10 pF Chip Capacitors (0805) C16, C17 2.7 pF Chip Capacitors (0805) C18 3.3 pF Chip Capacitor (0805) L1 - L6 12 nH Chip Inductors (0805) R1 - R3 0 W Chip Resistors (0805) Z1, Z11 1.16 x 28.5 mm Microstrip Z2, Z7, Z12 0.65 x 5.6 mm Microstrip Z3, Z8, Z13 0.65 x 2.6 mm Microstrip Z4, Z14 1.16 x 19.5 mm Microstrip Z5, Z15 1.16 x 17.5 mm Microstrip Z6 1.16 x 12.9 mm Microstrip Z9 1.16 x 27.2 mm Microstrip Z10 1.16 x 4.3 mm Microstrip PCB Etched Circuit Board Raw PCB Material Rogers RO4350, 0.020″, 2.5″, x 2.5″, er = 3.5 Bedstead Copper Heatsink MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9002R2 3 Freescale Semiconductor, Inc. RF1 OUTPUT RF1 INPUT C1 C2 VGS1 VDS1 C16 VGS2 VDS2 C8 C7 C10 C9 L4 C14 L1 R1 L2 RF2 INPUT C3 Pin 1 RF2 OUTPUT L5 R2 C18 Freescale Semiconductor, Inc... C13 C4 R3 L3 L6 C15 MRF9002 960 MHz Rev. B C11 C12 C17 VGS3 VDS3 C5 C6 RF3 INPUT RF3 OUTPUT Figure 2. MRF9002R2 Broadband Test Circuit Component Layout MRF9002R2 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS Pout 31 Gps 19.25 22 18.75 27 18.5 25 18.25 23 18 21 VDS = 26 Vdc IDQ = 25 mA f = 960 MHz Single−Tone 19 15 0 2 4 6 8 10 12 14 17.75 75 mA 20 50 mA 19 18 25 mA 17 VDS = 26 Vdc f = 960 MHz Single−Tone 16 17.25 17 16 15 10 15 30 35 40 Figure 3. Output Power and Power Gain versus Input Power Figure 4. Power Gain versus Output Power 20.2 −29 20.1 −30 IMD 20 −31 Pout = 2 W (PEP) IDQ = 25 mA f1 = 960.0 MHz, f2 = 960.1 MHz 19.9 23 24 25 26 −32 27 28 29 −20 −25 −30 −35 −40 −45 25 mA −50 50 mA −55 75 mA VDS = 26 Vdc f1 = 960.0 MHz, f2 = 960.1 MHz −60 100 mA −65 30 5 10 VDS, DRAIN SOURCE SUPPLY (VOLTS) −10 39 Pout , OUTPUT POWER (dBm) 41 −20 3rd Order −30 −40 5th Order −50 7th Order VDS = 26 Vdc f1 = 960.0 MHz, f2 = 960.1 MHz 20 25 30 25 30 35 35 Pin = 20 dBm 37 35 15 dBm 33 VDS = 26 Vdc IDQ = 25 mA Single−Tone 31 29 10 dBm 40 25 925 935 945 955 965 975 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Output Power versus Frequency MOTOROLA RF DEVICE DATA 40 27 −70 15 20 Figure 6. Intermodulation Distortion versus Output Power 0 −60 15 Pout, OUTPUT POWER (dBm) PEP Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage IMD, INTERMODULATION DISTORTION (dBc) 25 Pout, OUTPUT POWER (dBm) −28 10 20 Pin, INPUT POWER (dBm) Gps G ps , POWER GAIN (dB) 21 17.5 20.3 22 100 mA 19 29 17 Freescale Semiconductor, Inc... 23 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Pout , OUTPUT POWER (dBm) 33 19.5 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 35 For More Information On This Product, Go to: www.freescale.com 985 MRF9002R2 5 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 12 11 Ciss 10 C, CAPACITANCE (pF) 9 8 Coss 7 6 5 4 Crss 3 2 Freescale Semiconductor, Inc... 22 23 24 25 26 27 28 29 30 VDS, DRAIN SOURCE SUPPLY (VOLTS) Figure 9. Capacitance versus Drain Source Voltage MRF9002R2 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TRANSISTORS 1 and 2 TRANSISTOR 3 Zo = 50 Ω Zo = 50 Ω T3 T2 T1 T2 985 MHz f = 925 MHz 985 MHz f = 925 MHz 985 MHz Zsource Zload Zsource Zsource Freescale Semiconductor, Inc... 985 MHz f = 925 MHz f = 925 MHz T1 985 MHz 985 MHz Zload Zload T3 f = 925 MHz f = 925 MHz VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz Zsource Ω Zload Ω 925 4.5 + j13.3 23.4 + j9.2 960 4.3 + j15.3 23.2 + j10.4 985 4.1 + j15.8 23.0 + j11.1 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz Zsource Ω Zload Ω 925 6.0 + j12.3 19.7 + j27.8 960 5.9 + j14.3 22.0 + j23.9 985 5.8 + j16.5 22.5 + j25.4 Transistor 2 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz Zsource Ω Zload Ω 925 4.3 + j12.2 23.1 + j6.5 960 4.3 + j14.0 22.8 + j8.4 985 3.9 + j15.9 22.6 + j9.3 Z source Z load Transistor 3 Figure 10. Series Equivalent Source and Load Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9002R2 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF9002R2 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9002R2 9 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF9002R2 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 D e/2 D1 8 9 E1 8X M BOTTOM VIEW E C B S ÉÉ ÇÇÇ ÇÇÇ ÉÉ b1 Y c A A2 c1 b DATUM PLANE SEATING PLANE H C aaa M C A S SECT W - W L1 Freescale Semiconductor, Inc... bbb B ccc C q W GAUGE PLANE W L A1 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC −−− 0.600 0_ 7_ 0.200 0.200 0.100 1.000 0.039 DETAIL Y CASE 978 - 03 ISSUE B PLASTIC PFP- 16 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9002R2 11 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF9002R2 12 ◊ MRF9002R2/D MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com