BUL903ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED APPLICATIONS ■ LAMP ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING USING 277V HALF BRIDGE CURRENT-FED CONFIGURATION DESCRIPTION The BUL903ED is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed in order to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 900 V V CEO Collector-Emitter Voltage (IB = 0) 400 V V EBO Emitter-Base Voltage (IC = 0) 7 V Collector Current 5 A IC I CM IB Collector Peak Current (tp <5 ms) 8 A Base Current 2 A 4 A I BM Base Peak Current (tp <5 ms) P t ot o Total Dissipation at T c = 25 C T stg Storage Temperature Tj June 1998 Max. O perating Junction Temperature 70 W -65 to 150 o C 150 o C 1/6 BUL903ED THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.8 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it 1 mA 100 µA I CES Collector Cut-off Current (V BE = 0) V CE = 900 V I EBO Base-Emitter Leakage Current V EB = 7 V V CEO(sus) Collector-Emitter Sustaining Voltage (IB = 0) I C = 10 mA L = 25 mH V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 1 A I B = 0.15 A 1.0 V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 0.1 A I C = 0.5 A I C = 2.0 A IB = 0.05 A IB = 0.1 A IB = 0.4 A 1.0 1.1 1.2 V V V DC Current G ain I C = 5 mA I C = 0.5 A V CE = 10 V V CE = 3 V Parallel Diode Forward Voltage IF = 3 A 1.2 V td tr ts tf RESISTIVE LO AD Delay Time Rise Time Storage Time Fall T ime V CC = 125 V I B1 = 0.05 A t p = 300 µs I C = 0.7 A I B2 = 0.4 A 0.2 1.0 0.8 0.25 µs µs µs µs td tr ts tf RESISTIVE LO AD Delay Time Rise Time Storage Time Fall T ime V CC = 125 V I B1 = 0.045 A t p = 300 µs I C = 0.5 A I B2 = 0.5 A 0.2 0.5 0.8 0.5 µs µs µs µs T RR Diode Reverse Recovery Time IF = 1 A V DD = 30 V di/dt = 100 A/µs E sb Avalanche Energy L = 2 mH h FE∗ VF ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 400 V 8 20 300 6 ns mJ BUL903ED Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/6 BUL903ED Reverse Biased SOA Resistive Load Switching Test Circuit Energy Rating Test Circuit Vcc C L=2mH Rg T1 Vin TUT Vbb + Tp SC12620 4/6 BUL903ED TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/6 BUL903ED Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 6/6