Feb 2003 AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. VDS (V) = 20V ID = 5A RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 65mΩ (VGS = 2.5V) RDS(ON) < 90mΩ (VGS = 1.8V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D2 G2 S1 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS ±8 V ID 4.2 IDM 20 5 TA=70°C B TA=25°C Power Dissipation Units V TA=25°C Continuous Drain Current A Pulsed Drain Current Maximum 20 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. 2 PD TA=70°C W 1.28 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 56 81 40 °C Max 62.5 110 48 Units °C/W °C/W °C/W AO9926 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=10V, VDS=5V 15 TJ=55°C 0.6 1 V 40 50 56 70 VGS=2.5V, ID=4A 54 65 mΩ VGS=1.8V, ID=2A 72 90 mΩ VDS=5V, ID=5A 11 TJ=125°C Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA nA gFS Coss 5 100 VGS=4.5V, ID=5A IS Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=5A A 0.76 mΩ S 1 V 2 A 436 pF 66 pF 44 pF 3 Ω 5.54 nC 1.26 nC Qgd Gate Drain Charge 0.52 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=5V, VDS=10V, RL=2Ω, RGEN=6Ω 7 ns 29 ns 6.2 ns IF=5A, dI/dt=100A/µs 13.7 Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 3.8 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO9926 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 3.5V 4.5V BVDSS Drain-Source BreakdowID=250µA, VGS=0V 3V IGSS 1 2V TJ=55°C 8 ID (A) Gate Threshold Voltag VDS=VGS ID=250µA ID(ON) On state drain current VGS=4.5V, VDS=5V 100 nA 0.6 1 V 4 41 50 TJ=125°C 58 70 2 52 63 mΩ 67 87 mΩ V =1.5V GS VGS =4.5V, ID=5A gFS 5 Static Drain-Source On-Resistance 0 VSD VGS=2.5V, ID=4A 0.4 6 15 A VGS=1.8V, ID=3A 0 Forward Transconduct VDS=5V, ID=5A 1 2 3 4 0 5 0.4 0.8 Diode Forward VoltageIS=1A,VGS=0V VDS (Volts) Maximum Continuous Current IS Fig 1:Body-Diode On-Region Characteristics DYNAMIC PARAMETERS Ciss 100 Input Capacitance 1.8 Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz Crss Normalized On-Resistance Reverse Transfer Capa RDS(ON) (mΩ) Gate Drain Charge tD(on) Turn-On DelayTime 40 tr Turn-Off DelayTime 20 Qrr Turn-Off Fall Time 1.6 50 100 A pF pF 44 pF 3 Ω 6.2 nC 1.6 nC 0.5 VGS=4.5V, 5A nC ns VGS=1.8V, 2A ns 40 ns 12.7 ns 12.3 100 75 125 150 3.5 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature D V 66 6.3 25 S 2.8 436 5.5 0 2.4 VGS=2.5V, 4A 1.2 0.8 I =5A, dI/dt=100A/µs 0 Body 2Diode Reverse 4 6R F 8 10 12 Body Diode Reverse RIF=5A, dI/dt=100A/µs I (A) 2 mΩ 1 V0.76 GS(Volts) Figure 2: Transfer Characteristics 2 Figure 3: On-Resistance vs. Drain Current and Gate Voltage ns 175 nC 1.0E+01 90 1.0E+00 125°C ID=5A 80 1.0E-01 70 IS (A) RDS(ON) (mΩ) 1.6 VGS=5V, VDS=10V, RL=2Ω, 1 RGEN=6Ω Turn-On Rise Time tD(off) tf trr VGS=4.5V 11 1.2 80 Gate resistance VGS=1.8V Rg VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS 1.4 Qg Total Gate Charge VGS=2.5V 60 Gate Source Charge VGS=4.5V, VDS=10V, ID=5A Qgs Qgd 125°C 25°C VGS(th) 10 µA 5 Gate-Body leakage curVDS=0V, VGS=±8V RDS(ON) V VDS=5V VDS=16V, VGS=0V Zero Gate Voltage 2.5V Drain Current 15 20 10 ID(A) IDSS 12 8V 125°C 60 25°C 1.0E-02 1.0E-03 50 25°C 1.0E-04 40 1.0E-05 30 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO9926 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1800 5 VGS (Volts) 3 VGS(th) Gate Threshold Voltag VDS=VGS ID=250µA ID(ON) 2 On state drain current VGS=4.5V, VDS=5V VGS=4.5V, ID=5A Static Drain-Source On-Resistance µA 5 Ciss 100 nA 0.6 1 V C 41 rss 50 TJ=125°C 400 58 70 200 52 63 mΩ 67 87 mΩ VGS=2.5V, ID=4A 0.4 800 15 A Coss 600 Transconduct 0 Forward 1 2 3 4VDS=5V, 5 ID=5A 6 7 VSD Diode Forward VoltageI Qg (nC) S=1A,VGS=0V Figure 7:Body-Diode Gate-Charge Continuous Characteristics Maximum Current IS DYNAMIC PARAMETERS Ciss Input Capacitance 100.0 Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz 20 Crss 1 1000 VGS=1.8V, ID=3A 0 gFS V 1200 TJ=55°C Gate-Body leakage curVDS=0V, VGS=±8V RDS(ON)1 20 1400 VDS=16V, VGS=0V Zero Gate Voltage Drain Current IDSS IGSS 1600 Drain-Source BreakdowID=250µA, VGS=0V 4 Capacitance (pF) BVDSS VDS=10V ID=5A 0 0 5 11 10 0.76 VDS (Volts) mΩ S20 15 1 V Figure 8: Capacitance Characteristics 2 436 66 Reverse Transfer Capa 44 A pF T J(Max)=150°C T A=25°C pF pF Ω 6.2 nC 1.6 nC Qgd Gate Drain Charge 0.5 nC tD(on) 1.0 Turn-On DelayTime 1s 5.5 ns tr T J(Max)=150°C Turn-On Rise Time tD(off) A Turn-Off DelayTime tf trr T =25°C 0.1 Qrr Turn-Off Fall Time 0.1s VGS=5V, 10s VDS=10V, RL=2Ω, RGEN=6Ω 0 0.001 D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 6.3 ns 40 ns 12.7 ns 0.1 12.31 10 Pulse 3.5Width (s) 0.01 100 ns 1000 nC Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 5 DC dI/dt=100A/µs RIF=5A, 0.1Body Diode Reverse 1 10 100 I =5A, dI/dt=100A/µs V (Volts) DS Body Diode Reverse RF 10 3 Power (W) ID (Amps) Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 15 RDS(ON) 100µs 10µs SWITCHING PARAMETERS 10.0 limited 1ms Qg Total Gate Charge10ms Qgs Gate Source Charge VGS=4.5V, VDS=10V, ID=5A 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA SO-8 Package Data SEMICONDUCTOR, INC. DIMENSIONS IN MILLIMETERS SYMBOLS A A1 A2 b c D E1 e E h L aaa θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− DIMENSIONS IN INCHES MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 6.20 0.50 1.27 0.10 8° 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° θ NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION LOGO 9 9 2 6 FAYWLC NOTE: LOGO 9926 F A Y W LC RECOMMENDED LAND PATTERN - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SO-8 PART NO. CODE PART NO. CODE AO9926 9926 UNIT: mm Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data