APT20GF120BR
APT20GF120BR
1200V
32A
Fast IGBT
TO-247
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated
G
C
C
E
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20GF120BR
VCES
Collector-Emitter Voltage
1200
VCGR
Collector-Gate Voltage (RGE = 20KW)
1200
UNIT
Volts
±20
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current @ TC = 25°C
32
I C2
Continuous Collector Current @ TC = 90°C
20
1
Amps
64
I CM
Pulsed Collector Current
I LM
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
40
EAS
Single Pulse Avalanche Energy
2
22
mJ
PD
Total Power Dissipation
200
Watts
TJ,TSTG
TL
@ TC = 25°C
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
MIN
TYP
MAX
5.5
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C)
2.7
3.2
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C)
3.3
3.9
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA)
Gate Threshold Voltage
UNIT
1200
(VCE = VGE, I C = 350µA, Tj = 25°C)
4.5
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
0.8
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
5.0
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
±100
Volts
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
052-6214 Rev B 11-2000
Symbol
APT20GF120BR
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
TYP
MAX
1050
1210
100
150
f = 1 MHz
63
110
Gate Charge
VGE = 15V
95
140
13
20
I C = I C2
62
90
Resistive Switching (25°C)
15
30
VGE = 15V
67
130
92
140
93
190
17
34
30
60
105
160
I C = I C2
71
140
Turn-on Switching Energy
R G = 10W
1.3
3.0
Eoff
Turn-off Switching Energy
TJ = +150°C
1.5
3.0
Ets
Total Switching Losses
2.7
5.0
17
30
35
70
I C = I C2
93
140
Fall Time
R G = 10W
70
140
Ets
Total Switching Losses
TJ = +25°C
2.4
5.0
gfe
Forward Transconductance
VCE = 20V, I C = I C2
12
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
td(on)
tr
td(off)
tf
Capacitance
VGE = 0V
VCE = 25V
3
Qg
Turn-on Delay Time
MIN
VCC = 0.5VCES
Rise Time
VCC = 0.5VCES
Turn-off Delay Time
I C = I C2
Fall Time
RG = 10W
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
Fall Time
Turn-on Delay Time
Rise Time
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
Turn-off Delay Time
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RQJC
Junction to Case
RQJA
Junction to Ambient
WT
Torque
052-6214 Rev B 11-2000
Characteristic
MIN
TYP
MAX
UNIT
0.63
°C/W
Package Weight
40
0.22
oz
6.1
gm
10
lb•in
1.1
N•m
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, RGE = 25W, L = 110µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT20GF120BR
50
VGE=17 & 15V
13V
40
30
11V
20
10
9V
IC, COLLECTOR CURRENT (AMPERES)
IC, COLLECTOR CURRENT (AMPERES)
50
30
11V
20
10
9V
7V
0
4
8
12
16
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (TJ = 150°C)
60
100
0
250µSec. Pulse Test
VGE = 15V
40
IC, COLLECTOR CURRENT (AMPERES)
IC, COLLECTOR CURRENT (AMPERES)
13V
40
7V
0
4
8
12
16
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
0
TC=-55°C
TC=+25°C
30
TC=+150°C
20
10
OPERATION
LIMITED
BY
VCE (SAT)
50
100µS
10
5
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
0
2,000
1,000
Cies
500
f = 1MHz
Coes
100
Cres
50
10
0.01
0.1
1.0
10
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
10mS
1
5 10
50 100
1200
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
0
2
4
6
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V
C, CAPACITANCE (pF)
VGE=17 & 15V
20
IC = IC2
TJ = +25°C
16
VCE=240V
12
VCE=600V
8
4
0
0
40
80
120
160
Qg, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0.5
D=0.5
0.2
0.1
0.05
0.05
Note:
0.02
0.01
0.01
t2
0.005
SINGLE PULSE
0.001 -5
10
t1
10-4
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
052-6214 Rev B 11-2000
0.1
PDM
ZqJC, THERMAL IMPEDANCE (°C/W)
1.0
APT20GF120BR
40
IC, COLLECTOR CURRENT (AMPERES)
VCE(SAT), COLLECTOR-TO-EMITTER
SATURATION VOLTAGE (VOLTS)
5.0
4.0
IC1
2.0
IC2
1.5
0.5 IC2
10
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
1.2
25
5.0
1.1
1
0.9
0.8
0.7
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
VCC = 0.66 VCES
VGE = +15V
TJ = +25°C
IC = IC2
4.0
Eoff
3.0
2.0
Eon
1.0
0
20
40
60
80
100
RG, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
10
0
1.6
SWITCHING ENERGY LOSSES (mJ)
TOTAL SWITCHING ENERGY LOSSES (mJ)
20
0
SWITCHING ENERGY LOSSES (mJ)
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
1.0
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature
30
IC1
IC2
1
0.5 IC2
VCC = 0.66 VCES
VGE = +15V
RG = 10 W
0.1
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
VCC = 0.66 VCES
VGE = +15V
TJ = +125°C
RG = 10 W
1.2
Eoff
0.8
Eon
0.4
0
0
4
8
12
16
20
IC, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
IC, COLLECTOR CURRENT (AMPERES)
052-6214 Rev B 11-2000
100
For Both:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gate drive as specified
Power dissapation = 56W
ILOAD = IRMS of fundamental
10
1
0.1
1.0
10
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
100
1000
APT20GF120BR
VCHARGE
*DRIVER SAME TYPE AS D.U.T.
VCC = 0.66 VCES
Ets = E on + E off
A
A
90%
VC
B
10%
B
t d (on)
t d(off)
IC
VC
IC
100uH
90%
D.U.T.
VCE (SAT)
tr
VC
A
D.U.T.
DRIVER*
10%
IC
RG
V CLAMP
90%
10%
tf
E on
t=2uS
E off
Figure 15, Switching Loss Test Circuit and Waveforms
2
VCE(off)
VGE(on)
V CC
90%
.5 VCES
RL =
I C2
2
D.U.T.
10%
1
From
Gate Drive
Circuitry
VCE(on)
VGE(off)
t d (on)
tr
t d(off)
RG
1
tf
Figure 16, Resistive Switching Time Test Circuit and Waveforms
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Collector
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
Gate
Collector
Emitter
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
052-6214 Rev B 11-2000
0.40 (.016)
0.79 (.031)