Order this document by MURH8100E/D SEMICONDUCTOR TECHNICAL DATA Plastic TO–220 Package ULTRAFAST RECTIFIER 8.0 AMPERES 1000 VOLTS Features mesa epitaxial construction with glass passivation. Ideally suited high frequency switching power supplies; free wheeling diodes; polarity protection diodes; and inverters. • • • • 20 mjoules Avalanche Energy Guaranteed Ultrafast 50 Nanoseconds Recovery Time Stable, High Temperature, Glass Passivated Junction Monolithic Dual Die Construction. May be Paralleled for High Current Output. 4 Mechanical Characteristics: • Case: Molded Epoxy • Epoxy meets UL94, VO at 1/8″ • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Maximum Temperature of 260°C / 10 Seconds for Soldering • Shipped in 50 Units per Plastic Tube • Marking: H8100E 1 4 1 3 3 CASE 221B–03 TO–220AC MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 150°C) Per Leg Per Package Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 150°C) Per Leg Symbol Value Unit VRRM VRWM VR 1000 V IO 4.0 A IFRM 8.0 A IFSM 100 A Tstg, TC – 55 to +175 °C TJ – 55 to +175 °C RθJC 2.0 °C/W Non–Repetitive Peak Surge Current Per Package (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Operating Junction Temperature THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Case Per Leg ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (1), see Figure 2 Per Leg VF (IF = 4.0 A) (IF = 8.0 A) Maximum Instantaneous Reverse Current, see Figure 4 (VR = 1000 V) (VR = 500 V) Per Leg IR Value Unit TJ = 25°C TJ = 100°C 2.2 2.6 1.8 2.1 TJ = 25°C TJ = 100°C 10 4.0 100 55 V A (1) Pulse Test: Pulse Width ≤ 250 s, Duty Cycle ≤ 2%. This document contains information on a new product. Specifications and information herein are subject to change without notice. SWITCHMODE is a trademark of Motorola, Inc. Device Rectifier Motorola, Inc. 1997 Data 1 MURH8100E ELECTRICAL CHARACTERISTICS (continued) Rating Symbol Maximum Reverse Recovery Time (2) Value trr Per Leg Typical Peak Reverse Recovery Current Per Leg ns TJ = 25°C TJ = 125°C 50 75 80 100 ta tb 38 16 41 23 ns Irm TJ = 25°C TJ = 125°C A 1.5 3.7 2.2 5.5 (VR = 30 V, IF = 1.0 A, di/dt = 50 A/ms) (VR = 30 V, IF = 8.0 A, di/dt = 100 A/ms) Typical ta @ 8.0 (A) Typical tb @ 8.0 (A) Unit (VR = 30 V, IF = 1.0 A, di/dt = 50 A/ms) (VR = 30 V, IF = 8.0 A, di/dt = 100 A/ms) Waval Controlled Avalanche Energy (See Test Circuit in Figure 9) mJ 20 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 100°C 25°C TJ = 175°C 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.6 1.8 2.0 2.2 2.4 2.6 2.8 100°C 25°C TJ = 175°C 10 1.0 0.1 0.6 1.0 1.4 1.8 2.2 3.0 2.6 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 3.4 1.E–03 IR , MAXIMUM REVERSE CURRENT (AMPS) TJ = 175°C 1.E–04 1.E–04 100°C 1.E–05 TJ = 100°C 1.E–05 1.E–06 25°C 25°C 1.E–06 1.E–07 1.E–08 1.E–07 0 2 100 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1.E–03 IR, REVERSE CURRENT (AMPS) 1.4 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) (2) trr measured projecting from 25% of IRM to ground. 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 900 1000 Rectifier Device Data 14 dc PFO , AVERAGE POWER DISSIPATION (WATTS) IO , AVERAGE FORWARD CURRENT (AMPS) MURH8100E FREQ = 20 kHz 12 10 SQUARE WAVE 8.0 Ipk/Io = p 6.0 Ipk/Io = 5.0 4.0 Ipk/Io = 10 2.0 Ipk/Io = 20 0 0 20 60 40 80 100 120 140 160 180 18 Ipk/Io = 20 16 Ipk/Io = 5.0 Ipk/Io = p Ipk/Io = 10 14 dc 12 SQUARE WAVE 10 8.0 6.0 4.0 2.0 0 0 2.0 1.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating, Per Leg Figure 6. Forward Power Dissipation, Per Leg 10 C, CAPACITANCE (pF) 1000 100 TJ = 25°C 10 1.0 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 7. Capacitance 1.0 RqJC 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 8. Thermal Response Rectifier Device Data 3 MURH8100E +VDD IL 40 mH COIL BVDUT VD ID MERCURY SWITCH ID IL DUT S1 VDD t0 t1 t2 t Figure 9. Test Circuit Figure 10. Current–Voltage Waveforms The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 11, shows the test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed is approximately 20 mjoules. Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. EQUATION (1): W AVAL [ 12 LI 2LPK ǒ BV DUT BV –V DUT DD Ǔ 500V 50mV CH1 CH2 A 20ms 953 V VERT CHANNEL 1: VDUT 500 VOLTS/DIV. EQUATION (2): W AVAL CHANNEL 2: IL 0.5 AMPS/DIV. [ 12 LI 2LPK TIME BASE: 20 ms/DIV. 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF Figure 11. Current–Voltage Waveforms 4 Rectifier Device Data MURH8100E PACKAGE DIMENSIONS C B Q F T S DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. J INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.190 0.210 0.110 0.130 0.018 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 0.89 3.61 3.73 4.83 5.33 2.79 3.30 0.46 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 CASE 221B–04 ISSUE C Rectifier Device Data 5 MURH8100E Motorola reserves the right to make changes without further notice to any products herein. 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