e PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 13.0 dB Typ - Drain Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% lot traceability Typical Output Power & Efficiency vs. Input Power 60 Efficiency 140 45 100 30 VDD = 28.0 V IDQ = 1.8 A Total f = 880 MHz 60 Efficiency (%) Output Power (Watts) 180 1010 0 A-12 3456 9917 15 Output Power 20 0 0 1 2 3 4 5 6 7 8 Input Power (Watts) Package 20250 Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage (1) VDSS 65 Vdc Gate-Source Voltage (1) VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 500 Watts 2.85 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RqJC 0.35 °C/W (1) per side 1 e PTF 10100 Electrical Characteristics (per side) (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) — 4.3 — Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 2.5 — Siemens Symbol Min Typ Max Units Gps 12.0 13.0 — dB P-1dB 165 180 — Watts h 45 50 — % Y — — 10:1 — RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 165 W, IDQ = 1.8 A Total, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.8 A Total, f = 880 MHz) Drain Efficiency (VDD = 28 V, POUT = 165 W, IDQ = 1.8 A Total, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 165 W(PEP), IDQ = 1.8 A Total, f = 893.9, 894 MHz—all phase angles at frequency of test) Typical Performance Broadband Test Fixture Performance Typical POUT (at P-1dB), Gain vs. Frequency 175 VDD = 28 V IDQ = 1.8 A Total 14 125 Gain (dB) 12 75 Efficiency (%) 10 865 870 875 880 885 890 25 895 Gain 12 VDD = 28 V 10 POUT = 165 W 30 IDQ = 1.8 A Total 8 865 Frequency (MHz) 40 870 875 880 Return Loss (dB) 885 Frequency (MHz) 2 Efficiency Gain 16 50 14 890 -205 -10 10 -15 -20 0 -25 895 Return Loss Output Power (W ) 60 Efficiency (%) Gain (dB) 225 Output Power & Efficiency 18 16 e PTF 10100 Typical Performance Output Power vs. Supply Voltage Intermodulation Distortion vs. Output Power -10 VDD = 28 V 180 -20 160 IMD (dBc) 140 120 100 IDQ =1.8 A Total f = 894 MHz 80 ICQ = 1.8 A Total 3rd order f1 = 880.0 MHz -30 f2 = 880.1 MHz -40 -50 60 40 -60 20 22 24 26 28 30 30 50 70 Capacitance vs. Supply Voltage (per side) * 600 95 85 500 75 Cgs 400 65 VGS = 0 V f = 1 MHz 300 Cds 200 55 45 35 25 100 Crss 15 0 5 0 90 110 130 Output Power (Watts-PEP) Supply Voltage (Volts) Crss (pF) 18 Cds & Cgs (pF) Output Power (Watts) 200 10 20 30 40 Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures. 3 150 170 e PTF 10100 Impedance Data --- > VDD = 28 V, IDQ = 1.8 A Total, POUT = 165 W TO W A R jX R jX 860 2.3 1.6 1.60 -1.1 870 1.9 0.8 1.70 -1.7 880 1.8 0.3 1.90 -2.1 890 1.7 0.1 1.95 -1.8 900 1.6 -0.2 1.80 -1.5 900 MHz 860 MHz 900 MHz Z Load 0.1 W MHz 0.1 Z Load W 860 MHz EN AVE L Z Source W Frequency Z Source 0.0 D DTOW ARD LOA G TH S - W AVELENGTHS S G G Z0 = 50 W RD G Z Load 0.1 D EN E R AT OR 0.2 Z Source Typical Scattering Parameters (VDS = 28 V, ID = 2 A per side) f (MHz) Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag Ang 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.980 0.982 0.983 0.989 0.989 0.987 0.983 0.982 0.980 0.972 0.958 0.929 0.858 0.693 0.783 0.918 0.951 0.974 0.988 0.984 0.979 0.980 0.992 0.991 0.986 -178 -179 -180 179 179 179 178 177 176 175 174 171 168 173 -170 -172 -175 -177 -178 -179 -180 180 180 179 178 0.996 0.773 0.641 0.545 0.489 0.449 0.425 0.414 0.405 0.419 0.442 0.509 0.662 0.882 0.714 0.423 0.261 0.184 0.124 0.060 0.048 0.070 0.058 0.049 0.042 15.6 12.8 9.48 7.19 5.48 2.11 -0.90 -4.52 -10.2 -14.3 -19.9 -27.5 -42.4 -75.9 -125 -153 -167 -179 165 158 -154 179 166 156 149 0.010 0.008 0.006 0.005 0.003 0.002 0.002 0.001 0.001 0.001 0.001 0.005 0.013 0.030 0.028 0.022 0.020 0.019 0.018 0.017 0.018 0.018 0.018 0.019 0.021 -85.2 -85.3 -85.7 -85.3 -93.7 -74.5 -64.9 -68.5 -55.1 -88.5 -87.2 -105 -133 174 120 101 89.2 81.8 77.9 76.7 77.4 73.9 74.5 78.7 79.7 0.994 0.993 0.992 0.996 0.999 0.995 0.996 0.998 0.997 0.997 0.993 0.991 0.989 0.987 0.993 0.989 0.982 0.982 0.990 0.990 0.986 0.983 0.990 0.992 0.984 -177 -177 -178 -179 -179 -179 -179 -180 -180 180 180 179 179 179 179 179 179 178 178 178 178 178 177 178 178 4 S22 e PTF 10100 Test Circuit Schematic for f = 894 MHz DUT C1-2 C3 C4 C5 C6-7, C10, C13-14, C18 C8, C11 C9, C12, C15, C19 C16, C17, C20, C21 C22 L1. L2 R1, R2, R4, R5 R3, R6 l1, l20 l2, l17 l3, l16 l4, l15 l5, l6 l7, l8 l9, l10 l11, l12 l13, l14 10100 15 pF, Capacitor ATC 100 B 0.6–6.0 pF, Variable Capacitor 0.35–3.5 pF, Variable Capacitor 1–9 pF, Variable Capacitor 33 pF, Capacitor ATC 100 B 10 mF, +10 V Tantalum 0.01 mF, Capacitor ATC 100 B 10 mF, +30 V Tantalum 11 pF, Capacitor ATC 100 B 4 Turn, #20 AWG, .120” I.D. 510 W Resistor 510 W Resistor Circuit Board 5 50 W, .030 l 20 W, .089 l 9.6 W, .055 l 25 W, .500 l 25 W, .373 l 12.2 W, .062 l 13.0 W, .017 l 6.6 W, .059 l 9.6 W, .055 l .028” G200, er = 4.55 @ 1 MHz, AlliedSignal e PTF 10100 Components Layout (not to scale) Artwork (1 inch Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 ) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L2 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10100 Uen Rev. A 05-03-99