PTF 10020 125 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Typical Output Power vs. Input Power 150 Output Power (Watts) 960 MHz 125 100 900 MHz 100 20 A-1 75 234 569 813 860 MHz 50 VDD = 28 V 25 IDQ = 1.4 A Total 0 0 1 2 3 4 5 6 7 Input Power (Watts) Package 20240 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 125 W, IDQ = 1.4 A Total, f = 960 MHz) Symbol Min Typ Max Units Gps 11.0 12.5 — dB P-1dB 125 130 — Watts h 50 55 — % Y — — 10:1 — Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.4 A Total, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1.4 A Total, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W(PEP), IDQ = 1.4 A Total, f = 959.9, 960 MHz—all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10020 Electrical Characteristics Characteristic (100% Tested—characteristics, conditions and limits shown per side) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 4.3 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 2.5 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage (1) VDSS 65 Vdc Gate-Source Voltage (1) VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at PD Above 25°C derate by 290 Watts 1.67 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.6 °C/W (1)per side Typical Performance 50 - 30 5 IDQ = 1.4 A Total -15 20 POUT = 125 W 8 -25 10 Return Loss 870 880 890 -35 0 900 Gain (dB) VDD = 28 V 12 Efficiency % 50 16 40 Gain 4 860 18 Return Loss (dB) Gain (dB) 16 60 40 14 12 Gain VDD = 28 V Return Loss 6 930 935 940 945 950 Frequency (MHz) 2 -15 20 POUT = 125 W 8 Frequency (MHz) - 30 5 IDQ = 1.4 A Total 10 4 925 Efficiency Efficiency % Broadband Test Fixture Performance 20 955 -25 10 -35 0 960 Return Loss (dB) 60 Efficiency Broadband Test Fixture Performance 20 e PTF 10020 Typical Performance Efficiency vs. Output Power Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency 14 130 13 110 Gain (dB) VDD = 28 V 12 90 IDQ = 1.4 A Total 11 70 Efficiency (%) 10 860 880 900 920 940 70 60 Efficiency (%) 150 Output Power (W ) Output Power & Efficiency Gain 15 80 50 40 30 VDD = 28 V 20 IDQ = 1.4 A Total f = 960 MHz 10 50 960 0 30 50 70 90 110 130 Output Power (Watts) Frequency (MHz) Intermodulation Distortion vs. Output Power Output Power vs. Supply Voltage -10 150 -20 130 IDQ = 1.4 A Total f1 = 941.9 MHz IMD (dBc) Output Power (Watts) VDD = 28 V -30 110 90 3rd order -40 IDQ = 1.4 A Total f = 960 MHz Pin = 5.4 W 70 f2 = 942.0 MHz 5th -50 7th -60 50 22 24 26 28 30 32 20 34 30 VDS, Supply Voltage 50 60 70 180 Cds and Cgs (pF) VDD = 28 V f = 960 MHz 14 IDQ = 700 mA 13 IDQ = 350 mA 12 90 100 110 120 Capacitance vs. Voltage (one side)* 160 15 IDQ = 1.4 A 80 Output Power (Watts-PEP) Power Gain vs. Output Power Gain (dB) 40 140 24 VGS = 0 V f = 1 MHz Cgs 120 21 18 100 15 80 12 Cds 60 9 40 6 Crss 20 3 0 11 1 10 100 0 0 1000 27 Crss (pF) 20 10 20 30 40 Supply Voltage (Volts) Output Power (W) *This part is internally matched. Measurements of the finished product will not yield these figures. 3 e PTF 10020 Typical Performance Bias Voltage vs. Temperature Bias Voltage (V) 1.04 Voltage normalized to 1.0 V Series show current (A) 1.02 0.40 1.32 1.00 2.25 3.17 0.98 4.09 5.02 0.96 0.94 -20 30 80 130 Temp. (°C) Impedance Data (VDD = 28 V, IDQ = 1.4 A, POUT = 125 W) Z Source D Z Load Z0 = 50 W S G G D Z Source W Frequency Z Load W MHz R jX R jX 835 1.7 -8.9 2.3 -1.3 860 1.9 -9.3 2.3 -0.9 885 1.9 -9.8 2.3 -1.0 910 1.9 -11.8 2.2 -1.2 935 2.5 -12.9 2.2 -1.3 960 2.2 -12.8 2.2 -2.1 985 1.8 -11.0 2.2 -2.2 4 e PTF 10020 Typical Scattering Parameters (one side only) (VDS = 28 V, ID = 4 A) f (MHz) S11 S21 S12 S22 Mag Ang Mag Ang Mag Ang Mag Ang 800 810 820 830 840 850 860 870 880 890 900 910 920 930 940 950 960 970 980 990 1000 0.974 0.974 0.974 0.974 0.972 0.972 0.971 0.969 0.968 0.966 0.964 0.963 0.961 0.958 0.956 0.953 0.95 0.946 0.942 0.937 0.933 176 175.9 175.7 175.6 175.4 175.4 175.2 175 174.9 174.8 174.7 174.6 174.3 174.2 174.1 174 173.8 173.8 173.7 173.6 173.6 0.657 0.66 0.662 0.666 0.669 0.672 0.674 0.679 0.686 0.695 0.705 0.716 0.729 0.743 0.757 0.774 0.791 0.807 0.821 0.838 0.853 -10.6 -11.5 -12.7 -13.6 -14.8 -16 -16.9 -18 -19.1 -20.2 -21.4 -23 -24.6 -26.3 -28.2 -30.3 -32.7 -35.4 -38.1 -41 -44 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 50.9 49 52.9 53.4 52.6 54.9 56.1 52.5 53.4 56.2 58.1 55.5 57.7 57 56.7 58.7 60.2 60 59.5 62 62.2 0.97 0.971 0.971 0.972 0.972 0.972 0.972 0.972 0.973 0.975 0.977 0.977 0.976 0.977 0.978 0.979 0.979 0.981 0.982 0.983 0.983 -172 -172.1 -172.3 -172.4 -172.5 -172.7 -172.8 -172.8 -173 -173.1 -173.2 -173.4 -173.6 -173.6 -173.8 -174 -173.9 -174.1 -174.2 -174.3 -174.4 Test Circuit Schematic for f = 960 MHz DUT C1-2 C3 C4 C5 C6-7, C10, C13-14, C18 C8, C11 C9, C12, C15, C19 C16, C17, C20, C21 L1. L2 R1, R2, R4, R5 R3, R6 PTF 10020 15 pF, Capacitor ATC 100 B 0.35–3.5 pF, Variable Capacitor 7.5 pF, Capacitor ATC 100 A 1–9 pF, Variable Capacitor 33 pF, Capacitor ATC 100 B 10 mF, +10 V Electrolytic Capacitor 0.01 mF, Capacitor ATC 100 B 10 mF, +30 V Electrolytic Capacitor 4 Turn, #20 AWG, .120” I.D. 1.0 K, W Resistor 5.1 K, 1/4 W Resistor 5 l1, l20 l2, l19 l3, l18 l4, l17 l5, l6 l7, l10 l8, l9 l11, l12 l13, l14 l15, l16 Circuit Board 50 W, .030 l 20 W, .080 l 32 W, .191 l 25 W, .500 l 25 W, .091 l 7 W, .056 l 13.0 W, .017 l 13.0 W, .017 l 7.0 W, .093 l 10.2 W, .030 l .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e PTF 10020 Components Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10020 Uen Rev. A 01-15-00