PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated at 135 watts minimum power outpt. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 1.5 GHz, 28 V - Output Power = 135 Watts Min - Power Gain = 12.5 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 200 Output Power (Watts) 180 160 140 120 101 3456 25 9 100 A-12 80 935 VDD = 28 V 60 IDQ = 1.3 A Total f = 1500 MHz 40 20 0 0 3 6 9 12 15 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.3 A Total, f = 1.50, 1.55 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.3 A Total, f = 1.50, 1.55 GHz) Drain Efficiency (VDD = 28 V, POUT = 135 W, IDQ = 1.3 A Total, f = 1.5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 67.5 W, IDQ = 1.3 A Total, f = 1.5 GHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gps 11.5 12.5 — dB P-1dB 135 150 — Watts hD 35 40 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10125 Electrical Characteristics Characteristic (100% Tested—characteristics, conditions and limits shown per side) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V Gate Threshold Voltage VDS = 10 V, ID = 150 mA Forward Transconductance VDS = 10 V, ID = 6 A Symbol Min Typ Max Units V(BR)DSS 65 — — Volts IDSS — — 5.0 mA VGS(th) 3.0 — 5.0 Volts gfs 2.0 4.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage (1) VDSS 65 Vdc Gate-Source Voltage (1) VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 440 Watts 2.51 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.39 °C/W (1)per side Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 150 VDD = 28 V 15 IDQ = 1.3 A Total Gain (dB) 120 14 90 13 60 Efficiency (%) 12 1400 1450 1500 1550 30 1600 14 12 40 Gain 30 VDD = 28 V 10 8 6 1450 Frequency (MHz) IDQ = 1.3 A Total Return Loss (dB) 1475 1500 POUT = 135 W 1525 Frequency (MHz) 2 Efficiency Gain (dB) 16 20 -10 -15 10 -20 0 1550 Return Loss Output Power (W) 50 Efficiency (%) Gain (dB) 180 Output Power & Efficiency 17 Broadband Test Fixture Performance 16 e PTF 10125 Power Gain vs. Output Power Output Power (P-1dB) vs. Supply Voltage 14 200 IDQ = 1300 mA 12 IDQ = 325 mA 11 10 180 160 IDQ = 1.3 A Total f = 1500 MHz 140 120 100 9 10 100 24 1000 26 Intermodulation Distortion vs. Output Power 250 Cds and Cgs (pF) -10 3rd Order IMD (dBc) f1 = 1500.0 MHz, f2 = 1500.1 MHz -30 5th -40 7th -50 10 VGS = 0 V f = 1 MHz 200 6 Cgs 100 4 Cds 50 0 100 150 2 Crss 0 -70 50 8 150 -60 0 32 Capacitance vs. Supply Voltage (per side) * (as measured in a broadband circuit) VDD = 28 V, IDQ = 1.3 A Total 30 Supply Voltage (Volts) Output Power (Watts) -20 28 200 10 20 Crss (pF) Power Gain (dB) IDQ = 650 mA Output Power (Watts) VDD = 28 V f = 1500 MHz 13 0 30 40 Supply Voltage (Volts) Output Power (Watts-PEP) * This part is internally matched. Measurements of the finished product will not yield these results. Bias Voltage vs. Temperature Peak Power Gain for DAB Applications @ 10% Pulsed Input Signal 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 12 10 Bias Voltage (V) Peak Power Gain (dB) 14 10% Pulse Conditions f = 20 KHz Pulse Width = 5 us 8 6 VDD = 28 V 4 IDQ = 1.3 A Total f = 1500 MHz 2 0 0 10 20 30 40 50 60 1.01 1.00 0.6 0.99 1.74 2.88 0.98 4.02 0.97 5.16 0.96 6.3 0.95 Average Output Power (Watts) 10 dB Peak to Average -20 30 80 Temp. (°C) 3 130 e PTF 10125 GE N E Z Source W Frequency GHz R jX Z Load W R jX Z Source 1.6 GHz 1.4 GHz Z Load -4.23 2.60 -2.46 1450 4.16 -4.36 2.36 -2.53 1500 4.58 -3.30 2.04 -2.48 1550 4.02 -0.83 1.63 -2.52 1600 3.41 0.37 1.27 -2.08 4 1.6 GHz 1.4 GHz E 2.85 W AV <--- 1400 0.1 0.1 D 0 .0 S W ARD L OA D T HS T O L E NG G G Z Load D - W AV E LE NGT H S T OW A RD Z Source Z0 = 50 W 0.1 (VDD = 28 V, POUT = 135 W, IDQ = 1.3 A Total) RAT O Impedance Data e PTF 10125 Test Circuit Test Circuit Block Diagram for f = 1.5 GHz Q1 PTF 10125 LDMOS RF Transistor l1, l2 Microstrip 50 W l3, l4 .25 l @ 1.5 GHz Microstrip 70 W .08 l @ 1.5 GHz Microstrip 80 W l5, l6 l7, l8 .138 l @ 1.5 GHz Microstrip 9.5 W l9, l10 .096 l @ 1.5 GHz Microstrip 7.7 W l11, l12 .045 l @ 1.5 GHz Microstrip 7.7 W C1, C2, C3, C4, C7, C8, C11, C12 13 pF Chip Cap ATC 100 B C5, C6, C15, C16 0.1 mF Chip Cap K1206 C9, C10, C13, C14 10 mF SMT Tantalum Cap C17, C19 2.0 pF Chip Cap ATC 100 B C18 0.3 pF Chip Cap ATC 100 B 5 L1, L2 L3, L4 R1, R2, R3, R4 R5, R6 R7, R8 R9, R10 T1, T2 Circuit Board 2.7 nh SMT Coil 4 mm SMT Ferrite Bead 220 W Chip Resistor 2K SMT Potentiometer 10 W Chip Resistor 1 W Chip Resistor 50 W Coaxial Balun K1206 K1206 K1206 .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e PTF 10125 Parts Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com\rfpower 6 Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10125 Uen Rev. A 12-01-99