BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G Mechanical Data · · · · · Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections (see Diagram) Marking: S17 Weight: 0.008 grams (approx.) B C S D E G H M K J L Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source Voltage Characteristic -VDSS 200 V Drain-Gate Voltage -VDGS 200 V VGS ±20 V Gate-Source Voltage (pulsed) (Note 2) Drain Current (continuous) -ID 100 mA Power Dissipation @ TC = 50°C (Note 1) Pd 310 mW Tj, TSTG -55 to +150 °C Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Symbol Value Unit Max Forward Current (continuous) Characteristic IF 0.3 A Forward Voltage Drop (typical) @ VGS = 0, IF = 0.3A, Tj = 25°C VF 0.85 V Notes: 1. Device mounted on Ceramic Substrate 0.7mm x 2.5cm2 area. 2. Pulse Test: Pulse width = 80µs, duty cycle = 1%. DS11401 Rev. D-3 1 of 2 BS817 Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition -V(BR)DSS 200 230 — V -ID = 100µA, VGS = 0 -IGSS — — 10 nA -VGS = 15V, VDS = 0 -IDSS -IDSX — — 30 1.0 nA µA -VDS = 130V, VGS = 0 -VDS = 70V, -VGS = 0.2V Gate-Source Threshold Voltage -VGS(th) — 2.8 3.5 V -VGS = VDS, -ID = 1.0mA Drain-Source ON Resistance rDS(ON) — 30 50 W -VGS = 2.8V, -ID = 20mA Thermal Resistance, Junction to Substrate Backside RqJSB — — 320 K/W Thermal Resistance, Junction to Ambient Air RqJA — — 400 K/W Input Capacitance Output Capacitance Feedback Capacitance Ciss Coss Crss — 58 8.0 1.5 — pF -VDS = 20V, VGS = 0, f = 1.0MHz Switching Times Turn-On Time Turn-Off Time tON tOFF — 5.0 15 — ns -VGS = 10V, -VDS = 10V, RD = 100W Drain-Source Breakdown Voltage Gate-Body Leakage Current Drain-Source Cutoff Current 1. Device mounted on ceramic substrate 0.7mm x 2.5 cm2 area. 2. Pulse test: Pulse width = 80µs, duty cycle = 1%. Pd, POWER DISSIPATION (mW) 500 See Note 1 400 300 200 100 0 0 100 100 -VDS(0N), DRAIN-SOURCE ON-RESISTANCE (W) Notes: Note 1 Note 1 200 TA = 25 C 10 1 0 10 20 -VGS, GATE-SOURCE VOLTAGE (VOLTS) Fig. 2, Drain-Source Resistance vs Gate-Source Voltage TSB, SUBSTRATE TEMPERATURE ( C) Fig. 1, Power Derating Curve DS11401 Rev. D-3 -VDS = 0.1V 2 of 2 BS817