MOTOROLA Order this document by BUL146/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE BUL146* BUL146F* NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The BUL146/BUL146F have an applications specific state–of–the–art die designed for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power supplies for all types of electronic equipment. These high voltage/high speed transistors offer the following: • Improved Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail) • Full Characterization at 125°C • Parametric Distributions are Tight and Consistent Lot–to–Lot • Two Package Choices: Standard TO–220 or Isolated TO–220 • BUL146F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369 POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS MAXIMUM RATINGS Rating Symbol Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage Collector Current — Continuous — Peak(1) Base Current — Continuous — Peak(1) RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c Total Device Dissipation Derate above 25°C (TC = 25°C) Operating and Storage Temperature BUL146 BUL146F Unit VCEO VCES 400 Vdc 700 Vdc VEBO IC ICM IB IBM VISOL 9.0 Vdc 6.0 15 Adc 4.0 8.0 Adc PD TJ, Tstg — — — 4500 3500 1500 V 100 0.8 40 0.32 Watts W/°C – 65 to 150 BUL146 CASE 221A–06 TO–220AB °C THERMAL CHARACTERISTICS Rating Symbol BUL44 BUL44F Unit Thermal Resistance — Junction to Case — Junction to Ambient RθJC RθJA 1.25 62.5 3.125 62.5 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 BUL146F CASE 221D–02 ISOLATED TO–220 TYPE UL RECOGNIZED °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) ICEO 400 — — Vdc — — 100 µAdc ICES — — — — — — 100 500 100 µAdc IEBO — — 100 µAdc (continued) OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (2) Proper strike and creepage distance must be provided. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Base–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) Base–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) VBE(sat) — — 0.82 0.93 1.1 1.25 Vdc Collector–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) (TC = 125°C) Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) (TC = 125°C) VCE(sat) — — — — 0.22 0.20 0.30 0.30 0.5 0.5 0.7 0.7 Vdc hFE 14 — 12 12 8.0 7.0 10 — 30 20 20 13 12 20 34 — — — — — — — — 14 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT COB — 95 150 pF Input Capacitance (VEB = 8.0 V) CIB — 1000 1500 pF (TC = 125°C) — — 2.5 6.5 — — (TC = 125°C) — — 0.6 2.5 — — (TC = 125°C) — — 3.0 7.0 — — (TC = 125°C) — — 0.75 1.4 — — ton — — 100 90 200 — ns toff — — 1.35 1.90 2.5 — µs ton — — 90 100 150 — ns toff — — 1.7 2.1 2.5 — µs tfi — — 115 120 200 — ns tsi — — 1.35 1.75 2.5 — µs tc — — 200 210 350 — ns tfi — — 85 100 150 — ns tsi — — 1.75 2.25 2.5 — µs tc — — 175 200 300 — ns tfi 80 — — 210 180 — ns tsi 2.6 — — 4.5 3.8 — µs tc — — 230 400 350 — ns ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) (TC = 125°C) DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc) (TC = 125°C) DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc) (TC = 125°C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Dynamic Saturation Voltage: Determined 1.0 µs and 3.0 µs respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.3 Adc IB1 = 300 mAdc VCC = 300 V) (IC = 3.0 Adc IB1 = 0.6 Adc VCC = 300 V) 1.0 µs 3.0 µs 1.0 µs 3.0 µs VCE(dsat) V SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs) Turn–On Time (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc, VCC = 300 V) (TC = 125°C) Turn–Off Time (TC = 125°C) Turn–On Time (IC = 3.0 Adc, IB1 = 0.6 Adc IB1 = 1.5 Adc, VCC = 300 V) (TC = 125°C) Turn–Off Time (TC = 125°C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) Fall Time (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 1.5 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 0.6 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) 2 Motorola Bipolar Power Transistor Device Data TYPICAL STATIC CHARACTERISTICS 100 100 TJ = 25°C TJ = – 20°C 10 1 0.01 1 0.1 VCE = 5 V TJ = 125°C VCE = 1 V h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN TJ = 125°C TJ = 25°C TJ = – 20°C 10 1 0.01 10 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2 10 IC = 1 A 1 2A 3A 5A V CE , VOLTAGE (V) V CE , VOLTAGE (V) TJ = 25°C 6A 1 IC/IB = 10 0.1 TJ = 25°C TJ = 125°C IC/IB = 5 0 0.01 0.1 1 0.01 0.01 10 10 Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage 10000 1.1 TJ = 25°C f = 1 MHz Cib 1000 C, CAPACITANCE (pF) 1 V BE , VOLTAGE (V) 1 IC COLLECTOR CURRENT (AMPS) 1.2 0.9 0.8 TJ = 25°C 0.7 0.6 0.5 0.1 IB, BASE CURRENT (mA) TJ = 125°C 0.4 0.01 100 Cob 10 IC/IB = 5 IC/IB = 10 0.1 1 10 1 1 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 1000 3 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1000 4000 600 TJ = 125°C TJ = 25°C 2500 IC/IB = 10 2000 1500 500 0 0 0 6 4 2 8 0 2 4 6 IC, COLLECTOR CURRENT (AMPS) Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff 4000 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 1500 1000 500 TJ = 25°C TJ = 125°C 0 1 TJ = 25°C TJ = 125°C 3500 t si , STORAGE TIME (ns) IC/IB = 5 2000 3000 2500 2000 1500 1000 IC = 1.3 A 500 IC/IB = 10 3 4 6 2 5 IC COLLECTOR CURRENT (AMPS) 7 0 8 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 3 A 3 Figure 9. Inductive Storage Time, tsi 4 5 hFE, FORCED GAIN 6 7 Figure 10. Inductive Storage Time, tsi(hFE) 250 250 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH tc 200 200 tfi 150 t, TIME (ns) t, TIME (ns) 8 IC, COLLECTOR CURRENT (AMPS) 2500 100 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 50 0 0 4 IB(off) = IC/2 VCC = 300 V PW = 20 µs 1000 200 t, TIME (ns) IC/IB = 5 3000 400 0 TJ = 25°C TJ = 125°C 3500 t, TIME (ns) 800 t, TIME (ns) IB(off) = IC/2 VCC = 300 V PW = 20 µs IC/IB = 5 IC/IB = 10 1 2 tc tfi 150 100 TJ = 25°C TJ = 125°C 3 4 5 6 7 8 50 TJ = 25°C TJ = 125°C 0 1 2 3 4 5 6 7 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 Motorola Bipolar Power Transistor Device Data 8 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 130 250 TC , CROSS–OVER TIME (ns) 120 Tfi , FALL TIME (ns) IC = 1.3 A IC = 1.3 A IC = 3 A 110 100 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 90 80 TJ = 25°C TJ = 125°C 70 60 4 3 6 5 7 200 150 IC = 3 A 100 TJ = 25°C TJ = 125°C 50 8 9 10 11 12 13 14 3 15 4 5 6 7 8 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 9 10 11 12 13 hFE, FORCED GAIN hFE, FORCED GAIN Figure 13. Inductive Fall Time Figure 14. Inductive Cross–Over Time 14 15 GUARANTEED SAFE OPERATING AREA INFORMATION 7 100 TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 5 ms 10 10 µs 1 ms 1 µs EXTENDED SOA 1 DC (BUL146F) 0.1 I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) DC (BUL146) 6 5 4 3 VBE(off) 2 –5V 1 0V 0.01 10 0 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 Figure 15. Forward Bias Safe Operating Area POWER DERATING FACTOR SECOND BREAKDOWN DERATING 0,6 0,4 THERMAL DERATING 0,2 0,0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 17. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data –1, 5 V 600 400 200 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 800 Figure 16. Reverse Bias Switching Safe Operating Area 1,0 0,8 0 160 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on T C = 25°C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse–biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 5 10 5 4 VCE dyn 1 µs 3 8 2 VOLTS 90% IC tfi IC 9 tsi 7 dyn 3 µs 1 6 0 5 tc VCLAMP 10% VCLAMP IB 90% IB1 10% IC 4 –1 90% IB –2 3 1 µs –3 –4 2 3 µs IB –5 0 1 0 1 2 3 4 TIME 5 6 7 0 8 Figure 18. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 6 7 8 Figure 19. Inductive Switching Measurements +15 V 1 µF 150 Ω 3W 100 Ω 3W IC PEAK 100 µF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 Iout MPF930 +10 V IB A IB2 50 Ω RB2 MJE210 COMMON 500 µF 150 Ω 3W MTP12N10 1 µF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA –Voff INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit 6 Motorola Bipolar Power Transistor Device Data TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 P(pk) 0.1 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 10 100 1000 t, TIME (ms) Figure 20. Typical Thermal Response (ZθJC(t)) for BUL146 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 P(pk) 0.1 0.1 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) SINGLE PULSE 0.1 1 10 100 1000 10000 100000 t, TIME (ms) Figure 21. Typical Thermal Response (ZθJC(t)) for BUL146F Motorola Bipolar Power Transistor Device Data 7 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK MOUNTED FULLY ISOLATED PACKAGE 0.107″ MIN MOUNTED FULLY ISOLATED PACKAGE LEADS LEADS HEATSINK HEATSINK 0.107″ MIN 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** 4–40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 8 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L STYLE 1: PIN 1. 2. 3. 4. R V J BASE COLLECTOR EMITTER COLLECTOR G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BUL44 CASE 221A–06 TO–220AB ISSUE Y –T– –B– F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S Q U A 1 2 3 H STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER –Y– K G N L D J R 3 PL 0.25 (0.010) M B M DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 Y BUL44F CASE 221D–02 (ISOLATED TO–220 TYPE) ISSUE D Motorola Bipolar Power Transistor Device Data 9 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 10 ◊ Motorola Bipolar Power Transistor Device Data *BUL146/D* BUL146/D