BYW29G-200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) 8A VRRM trr 200 V 35 ns VF 0.85 V A K K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT SMD A NC D2PAK (Plastic) DESCRIPTION Single rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in a surface mount packageD2PAK, this device is intended for use in high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) RMS forward current 16 A IF(AV) Average forward current Tc=120°C δ = 0.5 8 A IFSM Surge non repetitive forward current (All pins connected) tp=10ms sinusoidal 80 A IFRM Repetitive peak forward current tp = 5 µs f = 5 kHz 75 A Tstg Tj Storage and junction temperature range - 40 to + 150 °C October 1999 - Ed: 2 1/5 BYW29G-200 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case thermal resistance Value Unit 2.8 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR * Reverse leakage current VF ** Pulse test : Test Conditions Forward voltage drop Max. Unit Tj = 25°C 10 µA Tj = 100°C 0.6 mA IF = 5 A Tj = 125°C 0.85 V IF = 10 A Tj = 125°C 1.05 IF = 10 A Tj = 25°C 1.15 VR = VRRM Min. Typ. * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.040 IF2(RMS) RECOVERY CHARACTERISTICS Symbol Parameter trr Reverse recovery time tfr VFP Test Conditions Typ. Max. Unit ns T j = 25°C Irr = 0.25 A IF = 0.5A I R = 1A 25 T j = 25°C dIF/dt = -50A/µs IF = 1A VR = 30V 35 Forward recovery time T j = 25°C IF = 1A dIF/dt = 100A/µs VFR = 1.1 x VF max Peak forward voltage T j = 25°C IF = 1A dIF/dt = 100A/µs PIN OUT configuration in D2PAK: 2/5 Min. ns 15 V 2 BYW29G-200 Fig.1 : Average forward power dissipation versus average forward current. 12 P F(av)(W) Fig.2 : Peak current versus form factor. 160 =0.05 =1 =0.5 =0.2 =0.1 IM(A) T 140 10 IM 120 8 100 =tp/T P=10W tp 80 6 T 60 4 P=5W 40 P=15W 2 IF(av)(A) 0 0 1 2 3 4 5 6 =tp/T 7 8 9 20 tp 10 11 Fig.3 : Forward voltage drop versus forward current (maximum values). 0 0 K Zth(j-c) (tp. ) K = Rth(j-c) 1.8 1.6 1 Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 VFM(V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Tj= 125 oC 1.4 =0.5 0.5 1.2 =0.2 1.0 = 0 .1 0.8 0.6 T 0.2 0.4 0.2 Single pulse IFM(A) 0.0 0.1 1 10 100 1.0E-03 Fig.5 : Non repetitive surge peak forward current versus overload duration. 80 60 50 Tc=25 oC 40 30 Tc=75 o C IM 10 0 0.001 1.0E-02 1.0E-01 tp 1. 0E+00 Fig.6 : Average current versus ambient temperature. (duty cycle : 0.5) IF(av)(A) IM(A) 70 20 =tp/T tp(s) 0.1 t Tc=120 o C t(s) =0.5 0.01 0.1 1 10 9 8 7 6 5 4 3 2 1 0 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15 o C/W =0.5 T =tp/T 20 tp 40 Tamb( o C) 60 80 100 120 140 160 3/5 BYW29G-200 Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) Fig.8 : Recovery charges versus dIF/dt. QRR(nC) F=1Mhz Tj=25o C VR(V) IF=IF(av) 90%CONFIDENCE Tj-10 0 O C dIF/dt(A/us) Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125oC] I RM(A) 90% CONFIDENCE Tj-100 O C IF=IF(av) IRM QRR dIF/dt(A/us) 4/5 Tj( oC) BYW29G-200 PACKAGE MECHANICAL DATA D2PAK (Plastic) REF. A E Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 A2 2.49 0.03 2.69 0.23 0.098 0.001 0.106 0.009 B 0.70 0.93 0.027 0.037 B2 C 1.14 0.45 1.70 0.60 0.045 0.017 0.067 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G L 4.88 15.00 5.28 15.85 0.192 0.590 0.208 0.624 L2 1.27 1.40 0.050 0.055 L3 M 1.40 2.40 1.75 3.20 0.055 0.094 0.069 0.126 C2 L2 D L L3 A1 B2 R C B G A2 M * V2 DIMENSIONS Millimeters Inches * FLAT ZONE NO LESSTHAN 2mm R V2 0.40 typ. 0° 8° 0.016 typ. 0° 8° FOOT PRINT (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of thirdparties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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