Transmissive Photosensors (Photo lnterrupters) CNZ1105 (ON1105) Unit: mm Photo Interrupter 14.3±0.3 Mark for Indicating LED side 2.5±0.2 7.0 min. CNZ1105 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 3.0±0.3 10.0±0.2 ■ Overview 4-0.45±0.2 (3) Rating Unit VR 3 V emitting diode) Forward current IF 50 mA PD 75 mW Output (Photo Collector-emitter voltage (Base open) transistor) VCEO 30 V Emitter-collector voltage (Base open) VECO 5 V Input (Light Power dissipation *1 Temperature Collector current IC 20 mA Collector power dissipation *2 PC 100 mW Operating ambient temperature T opr −25 to +85 °C Storage temperature Tstg −30 to +100 °C (4) 19.0±0.2 (1) 25.0±0.35 1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-007 Package ■ Absolute Maximum Ratings Ta = 25°C Symbol 2-φ3.2±0.2 6.2±0.2 • Highly precise position detection: 0.3 mm • Fast response tr , tf = 6 µs (typ.) • Small output current variation against change in temperature Reverse voltage (2.54) (10.0) (2) ■ Features Parameter 0.5±0.1 3.0±0.2 3.0±0.2 For contactless SW, object detection Internal Connection 2 3 1 4 Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.34 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Forward voltage VF IF = 50 mA characteristics Reverse current IR VR = 3 V Ct VR = 0 V, f = 1 MHz Input Terminal capacitance Output Collector-emitter cutoff current characteristics (Base open) Transfer ICEO CC VCE = 0 V, f = 1 MHz Collector current IC VCE = 10 V, IF = 20 mA Rise time * Fall time * Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. tr Typ Max 1.2 1.5 V 10 µA 200 nA 50 5 pF 0.3 mA IF = 50 mA, IC = 0.1 mA 0.3 VCC = 10 V, IC = 1 mA, RL = 100 Ω tf Unit pF VCE = 10 V Collector-emitter capacitance characteristics Collector-emitter saturation voltage VCE(sat) Min V 6.0 µs 6.0 µs 3. *: Switching time measurement circuit Sig. in VCC (Input pulse) Sig. out 50 Ω RL (Output pulse) 90% 10% td tr td: Delay time tr: Rise time tf: Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00028BED 1 CNZ1105 IF , I C T a IF V F 60 IF 30 IC 40 30 20 20 40 60 80 0 100 0 0.4 VF T a 1.6 0.4 0 40 2.0 10−2 ∆IC Ta 1 10−1 1 120 80 40 Collector-emitter voltage VCE (V) 0 tr IC Rise time tr (µs) RL = 1 kΩ 500 Ω 100 Ω 1 10−3 80 Ambient temperature Ta (°C ) 10−1 10−2 100 VCC = 10V Ta = 25°C 10 10−1 1 Collector current IC (mA) SHG00028BED 80 ∆IC d 10 2 10 V 40 Ambient temperature Ta (°C ) 1 40 VCE = 10 V IF = 20 mA 0 −40 10 2 10 10 3 10−1 10 2 10 160 10 ICEO Ta 0 1 Forward current IF (mA) VCC = 5 V Ta = 25°C 10−2 10−1 80 10 VCE = 24 V 10−3 10−1 2.4 Relative collector current ∆IC (%) 10 mA Collector current IC (mA) Forward voltage VF (V) IF = 50 mA 0.8 10−4 −40 10−1 IC VCE Ambient temperature Ta (°C ) Collector-emitter cutoff current (Base open) ICEO (µA) 1.2 10 2 1.2 10−2 1 Forward voltage VF (V) 1.6 2 0.8 Relative collector current ∆IC (%) 0 Ambient temperature Ta (°C ) 0 −40 VCE = 10 V Ta = 25°C 10 10 0 −25 Ta = 25°C 50 40 20 IC I F 10 Collector current IC (mA) 50 Forward current IF (mA) Forward current IF , Collector current IC (mA) 60 10 Criterion 0 d 80 60 40 20 0 0 1 2 3 4 Distance d (mm) 5 6 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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