PROCESS CP645 Central Power Transistor TM Semiconductor Corp. PNP, 8.0A Power Transistor Chip PROCESS DETAILS Process MULTIEPITAXIAL MESA Die Size 120 x 145 MILS Die Thickness 13 MILS Base Bonding Pad Area 20 x 45 MILS Emitter Bonding Pad Area 14 x 70 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Cr / Ni / Ag - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 640 PRINCIPAL DEVICE TYPES MJE15031 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (4- April 2005)