Preliminary Datasheet CR12LM-12B R07DS0213EJ0100 Rev.1.00 Dec 03, 2010 Thyristor Medium Power Use Features The product guaranteed maximum junction temperature of 150°C Insulated Type Planar Passivation Type UL Recognized: Yellow Card No. E223904 IT (AV) : 12 A VDRM : 600 V IGT : 30 mA Viso : 1800 V Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1. Cathode 2. Anode 3. Gate 3 1 1 2 3 Applications Switching mode power supply, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage R07DS0213EJ0100 Rev.1.00 Dec 03, 2010 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Page 1 of 6 CR12LM-12B Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Isolation voltage Preliminary Symbol IT (RMS) IT (AV) Ratings 18.8 12 Unit A A ITSM 360 A I2 t 544 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 5 0.5 6 10 2 – 40 to +150 – 40 to +150 1.5 W W V V A °C °C g Viso 1800 V Conditions Commercial frequency, sine half wave 180° conduction, Tc = 81°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, each terminal to case Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM Min. — — — Typ. — — — Max. 2.0/5.0 2.0/5.0 1.6 Unit mA mA V Test conditions Tj = 125°C/150°C, VRRM applied Tj = 125°C/150°C, VDRM applied VGT — — 1.5 V Tc = 25°C, ITM = 40 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A VGD 0.2/0.1 — — V IGT IH Rth (j-c) — — — — 15 — 30 — 3.2 mA mA °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. R07DS0213EJ0100 Rev.1.00 Dec 03, 2010 Page 2 of 6 CR12LM-12B Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 103 400 Surge On-State Current (A) 102 101 1.2 1.6 2.0 2.4 2.8 Gate Voltage (V) 101 102 × 100 (%) Gate Trigger Current vs. Junction Temperature PGM = 5 W VFGM = 6 V PG(AV) = 0.5 W IFGM =2A IGT = 30 mA VGD = 0.1 V 10–2 101 Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) × 100 (%) 80 Gate Characteristics 10–1 102 103 104 103 Typical Example 102 101 100 –40 0 40 80 160 120 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 100 –40 160 Conduction Time (Cycles at 60 Hz) VGT = 1.5 V 100 240 On-State Voltage (V) 102 101 320 0 100 3.2 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 0.8 0 40 80 120 Junction Temperature (°C) R07DS0213EJ0100 Rev.1.00 Dec 03, 2010 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tc = 25°C 102 101 100 10-1 10-3 10-2 10-1 100 101 Time (s) Page 3 of 6 CR12LM-12B Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 360° 180° Resistive, inductive loads 30 120° 90° 60° θ = 30° 20 10 360° 100 80 60 60° 120° 40 θ = 30° 90° 180° 0 0 4 8 12 16 20 24 0 4 8 12 16 20 24 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 50 160 140 40 180° 120° 30 60° 90° θ = 30° 20 θ 10 θ Case Temperature (°C) Average Power Dissipation (W) θ 120 20 0 360° 4 8 12 16 20 θ 120 Resistive loads 100 80 60 60° 40 0 24 θ 360° 20 Resistive loads 0 0 0 120° θ = 30° 90° 4 12 8 180° 16 20 24 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 160 θ 40 360° Resistive, 30 inductive loads 120° 90° 180° 270° DC 60° θ = 30° 20 10 Case Temperature (°C) 50 Average Power Dissipation (W) Resistive, inductive loads 140 θ 40 Case Temperature (°C) Average Power Dissipation (W) 50 Resistive, inductive loads 140 120 360° 100 80 60 60° 120° 40 θ = 30° 20 0 0 4 8 12 16 20 Average On-State Current (A) R07DS0213EJ0100 Rev.1.00 Dec 03, 2010 24 θ 0 0 4 270° 90° 180° 8 12 DC 16 20 24 Average On-State Current (A) Page 4 of 6 CR12LM-12B Preliminary 101 –40 0 40 80 120 × 100 (%) 160 Holding Current (Tj = t°C) Holding Current (Tj = 25°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 125°C 140 120 100 80 60 40 20 0 101 102 103 104 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 120 80 40 0 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 150°C 140 120 100 80 60 40 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Holding Current vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 –40 0 40 80 120 Junction Temperature (°C) R07DS0213EJ0100 Rev.1.00 Dec 03, 2010 160 × 100 (%) × 100 (%) Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) × 100 (%) Junction Temperature (°C) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) 102 × 100 (%) Typical Example Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) 103 Gate Trigger Current (tw) Gate Trigger Current (DC) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature 103 Typical Example 102 101 10−1 100 101 102 Gate Current Pulse Width (μs) Page 5 of 6 CR12LM-12B Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number CR12LM-12B#B00 CR12LM-12B-A8#B00 Packing Tube Tube Quantity 50 pcs. 50 pcs. Remark Straight type A8 Lead form Note : Please confirm the specification about the shipping in detail. R07DS0213EJ0100 Rev.1.00 Dec 03, 2010 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. 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