ROHM DAP222WM

Data Sheet
Switching Diode
DAP222WM
lApplications
High frequency switching
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
lFeatures
1)Ultra small mold type. (EMD3F)
2)High reliability
1.3
0.7
1.0
0.5 0.5
0.7
0.7
0.6
0.6
EMD3
lConstruction
Silicon epitaxial planer
lStructure
ROHM : EMD3F
dot (year week factory)
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
IFM
Forward voltage(repetitive peak)
Average rectified forward current
Io
Isurge
Surge current(t=1s)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Limits
80
80
300
100
4
150
150
Unit
V
V
mA
mA
A
mW
C
C
-55 to +150
Min.
Typ.
Max.
Unit
Conditions
-
-
1.2
V
IF=100mA
Reverse current
Capacitance between terminals
IR
-
-
0.1
μA
VR=70V
Ct
-
-
3.5
pF
Reverse recovery time
trr
-
-
4
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.12 - Rev.A
100
100000
Ta=150°C
Ta=125°C
10000
10
Ta=150°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
Data Sheet
DAP222WM
Ta=75°C
1
Ta=125°C
Ta=25°C
0.1
0.01
1000
Ta=75°C
100
Ta=25°C
10
1
0.1
0.001
0
0
100 200 300 400 500 600 700 800 900 1000
10
20
30
40
50
10
70
80
910
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
60
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1
Ta=25°C
IF=100mA
n=30pcs
900
890
880
AVE:884mV
870
860
850
0.1
0
5
10
15
20
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
Ta=25°C
VR=70V
n=10pcs
40
30
20
AVE:11nA
Ta=25°C
VR=0V
f=1MHz
n=10pcs
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
50
10
8
7
6
AVE:5.03pF
5
0
4
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/3
2011.12 - Rev.A
20
50
IF=IR=100mA
IRR=0.1IR
1cyc
15
REVERSE RECOVERY TIME:trr(ns)
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
DAP222WM
8.3ms
10
AVE:2.50A
5
0
40
30
20
AVE:19.3ns
10
0
trr DISPERSION MAP
IFSM DISPERSION MAP
5
100
IFSM
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
4
8.3ms
1cyc
3
2
1
0
t
10
1
1
10
100
0.1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
10
1000
Rth(j-a)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
9
Rth(j-c)
100
Mounted on epoxy board
IM=100mA
IF=10A
8
7
6
5
AVE:2.98kV
4
3
AVE:1.47kV
2
1ms
time
1
300us
10
0.001
0
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
3/3
2011.12 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A