DG213 Quad Complementary CMOS Analog Switch Features Benefits Applications 22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance—rDS(on): 45 Low Leakage—ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching—tON: 85 ns Low Charge Injection—Q: 1 pC Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Low Cost Industrial Instrumentation Test Equipment Communications Systems Computer Peripherals Portable Instruments Sample-and-Hold Circuits Description The versatile DG213 analog switch has two NC and two NO switches. It can be used in various configurations, including four single-pole single-throw (SPST), two single-pole double-throw (SPDT), one “T” switch, one DPDT, etc. This device is fabricated in a Siliconix’ proprietary high-voltage silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. This analog switch was designed for a wide variety of general purpose applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. These switches can handle up to 22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All switches feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. For additional information, please refer to Application Note AN208. Functional Block Diagram and Pin Configuration IN1 16 1 0 OFF ON 1 ON OFF IN2 D1 2 15 D2 S1 3 14 S2 V– 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Logic “0” 0.8 V Logic “1” 2.4 V Ordering Information Temp Range –40 to 85C Package Part Number 16-Pin Plastic DIP DG213DJ 16-Pin Narrow SOIC DG213DY 16-Pin TSSOP DG213DQ Top View Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70662. Applications information may also be obtained via FaxBack, request document #70606. Siliconix S-56461—Rev. C, 29-Dec-97 1 DG213 Absolute Maximum Ratings Voltages Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW 16-Pin TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/C above 75C d. Derate 7.6 mW/C above 75C Specifications Test Conditions Unless Otherwise Specified Parameter Symbol V = 15 V, V+ V V– V = –15 15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve D Suffix –40 to 85C Tempa Minc Full V– Typb Maxc Unit V+ V Analog Switch Analog Signal Ranged Drain-Source On-Resistance rDS(on) Match VANALOG rDS(on) VD = 10 V,, IS = 1 mA DrDS(on) Room Full 45 60 85 Room 1 2 Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room Full –0.5 –5 0.01 0.5 5 Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room Full –0.5 –5 0.01 0.5 5 Drain On Leakage Current ID(on) VS = VD = 14 V Room Full –0.5 –10 0.02 0.5 10 2.4 W nA Digital Control Input Voltage High VINH Full Input Voltage Low VINL Full Input Current Input Capacitance IINH or IINL VINH or VINL CIN Full 0.8 –1 1 Room 5 VS = 2 V See Fi Figure 2 S Room 85 130 Room 55 100 V mA pF Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay tD VS = 10 V, See Figure 3 Room Charge Injection Q CL = 1000 pF, Vg= 0 V, Rg = 0 W Room 1 Room 5 Room 5 VD = VS = 0 V, f = 1 MHz Room 16 CL = 15 pF, p , RL = 50 W VS = 1 VRMS, f = 100 kHz kH Room 90 Room 95 Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel On Capacitance CD(on) Off Isolation OIRR Channel-to-Channel Crosstalk XTALK 2 VS = 0 V V, f = 1 MHz 20 ns 25 pC pF dB Siliconix S-56461—Rev. C, 29-Dec-97 DG213 Specifications Test Conditions Unless Otherwise Specified Parameter Symbol V = 15 V, V V– V = –15 15 V V+ VL = 5 V, VIN = 2.4 V, 0.8 Ve D Suffix –40 to 85C Tempa Minc Typb Maxc Unit Power Supply Room Full Positive Supply Current I+ Negative Supply Current I– Room Full Logic Supply Current IL Room Full VOP Full VIN = 0 or 5 V Power Supply Range for Continuous Operation 1 5 –1 –5 mA 1 5 3 22 V Maxc Unit V+ V W Specifications for Unipolar Supply Test Conditions Unless Otherwise Specified Parameter Symbol V = 12 V, V+ V V– V =0V VL = 5 V, VIN = 2.4 V, 0.8 Ve D Suffix –40 to 85C Tempa Minc Full V– Typb Analog Switch Analog Signal Ranged VANALOG Drain-Source On-Resistance Room Full 90 110 140 VS = 8 V See Fi S Figure 2 Room 125 200 Room 45 100 rDS(on) VD = 3 V, 8 V, IS = 1 mA Turn-On Time tON Turn-Off Time tOFF Dynamic Characteristics Break-Before-Make Time Delay tD DG213 Only, See Figure 3 Room Charge Injection Q CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room 50 ns 80 4 pC Power Supply Room Full Positive Supply Current I+ Negative Supply Current I– Room Full Logic Supply Current IL Room Full VOP Full VIN = 0 or 5 V Power Supply Range for Continuous Operation 1 5 –1 –5 mA 1 5 3 V Notes: a. Room = 25C, Full = as determined by the operating temperature suffix. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Siliconix S-56461—Rev. C, 29-Dec-97 3 DG213 Typical Characteristics rDS(on) vs. VD and Power Supply Voltages rDS(on) vs. VD and Temperature 100 rDS(on) – Drain-Source On-Resistance ( ) rDS(on) – Drain-Source On-Resistance ( ) 110 100 90 5 V 80 70 10 V 60 15 V 50 40 20 V 30 20 –4 0 4 8 12 16 80 70 60 125C 50 85C 40 25C 30 –55C 20 10 0 –15 10 –20 –16 –12 –8 V+ = 15 V V– = –15 V 90 20 –10 250 10 V 12 V 20 ID(on) 10 IS(off), ID(off) 0 –10 –20 50 –30 0 0 2 4 6 8 10 –40 –20 12 –15 VD – Drain Voltage (V) –10 –5 0 5 10 15 20 VANALOG – Analog Voltage (V) Leakage Current vs. Temperature 30 1 nA V+ = 15 V V– = –15 V VS, VD = 14 V QS, QD – Charge Injection vs. Analog Voltage 20 Q – Charge (pC) I S, I D – Current 15 V+ = 22 V V– = –22 V TA = 25C 30 7V 100 10 Leakage Currents vs. Analog Voltage V– = 0 V VL = 5 V 200 150 5 40 I S, I D – Current (pA) rDS(on) – Drain-Source On-Resistance ( ) rDS(on) vs. VD and Single Power Supply Voltages 5V 0 VD – Drain Voltage (V) VD – Drain Voltage (V) 300 –5 100 pA IS(off), ID(off) 10 pA 10 0 V+ = 15 V V– = –15 V V+ = 12 V V– = 0 V –10 –20 1 pA –55 –35 –15 5 25 45 65 Temperature (C) 4 85 105 125 –30 –15 –10 –5 0 5 10 15 VANALOG – Analog Voltage (V) Siliconix S-56461—Rev. C, 29-Dec-97 DG213 Typical Characteristics (Cont’d) Off Isolation vs. Frequency 120 V+ = +15 V V– = –15 V 110 OIRR (dB) 100 90 RL = 50 80 70 60 50 40 10 k 100 k 1M 10 M f – Frequency (Hz) Schematic Diagram (Typical Channel) V+ SX VL Level Shift/ Drive V– V+ INX DX GND V– Figure 1. Test Circuits +15 V V+ VS = +2 V S D VO Logic Input 3V tr <20 ns tf <20 ns 50% 0V tOFF IN 3V GND V– RL 300 k CL 35 pF 90% Switch Output –15 V VO = VS RL VO tON RL + rDS(on) Figure 2. Switching Time Siliconix S-56461—Rev. C, 29-Dec-97 5 DG213 Test Circuits (Cont’d) +5 V +15 V 3V Logic Input VL V+ D1 S1 VS1 IN1 S2 VS2 50% 0V VS1 VO1 VO1 VO2 D2 Switch Output IN2 RL1 1 kW GND V– RL2 300 kW 0V VS2 VO2 CL1 35 pF CL2 35 pF 90% 90% 0V Switch Output tD tD –15 V CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make C +15 V +15 V C V+ S1 VS V+ S VS VO D D1 Rg = 50 W 50 W IN1 Rg = 50 W 0V, 2.4 V RL IN 0V, 2.4 V S2 NC GND V– C RL IN2 0V, 2.4 V GND Off Isolation = 20 log XTALK Isolation = 20 log VO Figure 4. Off Isolation DVO VO D IN Vg 3V GND –15 V Figure 5. Channel-to-Channel Crosstalk V+ S C VS VO +15 V Rg V– C = RF bypass –15 V VS VO D2 V– –15 V VO CL 1000 pF INX ON OFF ON DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO Figure 6. Charge Injection 6 Siliconix S-56461—Rev. C, 29-Dec-97 DG213 Applications +15 V +5 V –15 V VIN1 VOUT VIN2 CMOS Logic Input Select High = VIN1 Low = VIN2 –15 V CMOS Logic Gain Select High = 10x Low = 1 x 1x 10x DG213 GND 20 k 180 k –15 V Figure 7. Low Power Non-Inverting Amplifier with Digitally Selectable Inputs and Gain Siliconix S-56461—Rev. C, 29-Dec-97 7