15GN01MA Ordering number : ENA1100A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15GN01MA VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications Features • • Small ON-resistance [Ron=2Ω (IB=3mA)] Small output capacitance [Cob=1.1pF (VCB=10V)] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Conditions Ratings 15 V 8 V VEBO IC 3 V 50 mA 400 mW Junction Temperature PC Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7023A-009 • Package : MCP • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 3 15GN01MA-TL-E 0.2 0.15 0.9 Packing Type: TL Marking 1.25 0 to 0.08 LOT No. 1 ZA 2 0.65 LOT No. TL 0.3 0.3 0.425 2.1 0.425 2.0 Unit VCBO VCEO 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Electrical Connection 3 1 2 http://semicon.sanyo.com/en/network 71812 TKIM/93009AB TKIM TC-00002115 No. A1100-1/7 15GN01MA Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ Unit max ICBO IEBO VCB=10V, IE=0A VEB=2V, IC=0A Gain-Bandwidth Product hFE fT VCE=5V, IC=10mA VCE=5V, IC=10mA Output Capacitance Cob 1.1 1.5 Collector-to-Emitter Saturation Voltage VCE(sat) Ron VCB=10V, f=1MHz IC=20mA, IB=2mA 0.06 0.12 IB=3mA, f=10kHz 2.0 Emitter Cutoff Current DC Current Gain Output ON resistance 200 0.5 μA 0.5 μA 400 1.0 1.5 GHz pF V Ω Ordering Information Package Shipping memo MCP 3,000pcs./reel Pb Free Collector Current, IC -- mA 50 IC -- VCE 45 0.30 IC -- VCE 10 45μA mA 0.25mA 40 0.20mA 35 30 0.15mA 25 0.10mA 20 15 0.05mA 10 Collector Current, IC -- mA Device 15GN01MA-TL-E 9 40μA 8 35μA 7 30μA 6 25μA 5 20μA 4 15μA 3 10μA 2 5μA 1 5 IB=0mA 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 Collector-to-Emitter Voltage, VCE -- V 0.45 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 IT06247 hFE -- IC 7 VCE=5V VCE=5V 50 5 DC Current Gain, hFE Collector Current, IC -- mA 4.5 Collector-to-Emitter Voltage, VCE -- V IT06246 IC -- VBE 60 IB=0μA 0 0.50 40 30 20 3 2 10 0 100 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT06248 2 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 IT05405 No. A1100-2/7 15GN01MA f T -- IC 5 Cob -- VCB 5 f=1MHz Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- GHz VCE=5V 3 2 1.0 7 5 3 1.0 2 3 5 7 2 10 3 5 Collector Current, IC -- mA 2 1.0 7 5 0.1 7 100 IT05402 2 3 5 7 2 1.0 3 5 Collector-to-Base Voltage, VCB -- V Cre -- VCB 5 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Reverse Transfer Capacitance, Cre -- pF 2 1.0 7 5 0.1 IC / IB=10 0.1 7 5 3 2 0.01 2 3 5 7 2 1.0 3 5 7 3 10 IT06250 Collector-to-Base Voltage, VCB -- V 5 7 2 1.0 8 10kΩ 7 IB Collector Dissipation, PC -- mW Output ON resistance, Ron -- Ω 400 OUT 6 5 4 3 7 2 10 3 5 7 IT06249 When mounted on ceramic substrate (250mm2✕0.8mm) f=10kHz IN 5 PC -- Ta 450 1kΩ 9 3 Collector Current, IC -- mA Ron -- IB 10 350 300 250 200 150 100 50 2 1 0.1 10 VCE(sat) -- IC 2 f=1MHz 3 7 IT05404 0 2 3 5 7 1.0 Base Current, IB -- mA 2 3 5 IT05403 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06251 No. A1100-3/7 15GN01MA S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 ⏐S11⏐ 0.662 0.582 0.529 0.487 0.459 0.429 0.409 0.388 0.374 0.365 ∠S11 -25.65 -36.72 -47.21 -56.61 -65.82 -74.14 -82.44 -89.94 -96.79 -103.28 ⏐S21⏐ 4.631 3.028 2.353 1.955 1.691 1.496 1.353 1.239 1.149 1.072 ∠S21 122.00 112.20 104.69 97.68 91.07 85.11 79.01 73.29 67.98 63.13 ⏐S12⏐ 0.028 0.051 0.071 0.088 0.103 0.116 0.128 0.138 0.148 0.156 ∠S12 71.36 68.80 65.59 63.00 60.43 57.83 56.22 54.76 53.44 52.60 ⏐S22⏐ 0.765 0.732 0.713 0.700 0.689 0.679 0.674 0.671 0.671 0.670 ∠S22 -10.50 -14.15 -17.91 -21.58 -25.23 -28.81 -32.38 -35.89 -39.34 -42.75 ∠S11 -31.65 -46.40 -59.47 -70.80 -81.80 -91.29 -101.15 -109.42 -116.99 -124.06 ⏐S21⏐ 6.647 4.239 3.227 2.616 2.217 1.922 1.715 1.544 1.414 1.305 ∠S21 118.78 108.57 100.32 93.18 86.64 80.82 74.86 69.40 64.16 59.41 ⏐S12⏐ 0.026 0.046 0.064 0.079 0.093 0.105 0.115 0.125 0.135 0.144 ∠S12 71.86 68.22 65.90 63.91 62.30 60.39 59.29 58.34 57.86 57.47 ⏐S22⏐ 0.694 0.653 0.630 0.619 0.607 0.598 0.596 0.593 0.594 0.593 ∠S22 -11.96 -15.76 -19.10 -22.50 -25.83 -29.19 -32.72 -36.10 -39.48 -42.80 ∠S11 -41.07 -60.49 -76.83 -90.31 -102.08 -112.57 -122.49 -130.50 -137.80 -144.30 ⏐S21⏐ 8.945 5.500 4.039 3.197 2.654 2.264 1.988 1.771 1.605 1.470 ∠S21 114.82 103.75 95.20 88.11 81.71 76.38 70.80 65.75 60.92 56.51 ⏐S12⏐ 0.023 0.042 0.056 0.070 0.082 0.094 0.104 0.115 0.125 0.135 ∠S12 71.42 69.03 67.39 66.22 65.43 64.49 64.03 63.95 64.09 64.16 ⏐S22⏐ 0.611 0.568 0.548 0.539 0.533 0.528 0.530 0.530 0.534 0.537 ∠S22 -13.64 -16.14 -18.89 -21.75 -24.77 -27.99 -31.32 -34.57 -37.93 -41.24 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 ⏐S11⏐ 0.587 0.502 0.444 0.405 0.381 0.356 0.342 0.329 0.319 0.315 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 ⏐S11⏐ 0.505 0.417 0.369 0.341 0.328 0.316 0.311 0.306 0.304 0.306 No. A1100-4/7 15GN01MA Embossed Taping Specification 15GN01MA-TL-E No. A1100-5/7 15GN01MA Outline Drawing 15GN01MA-TL-E Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No. A1100-6/7 15GN01MA Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. PS No. A1100-7/7