DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 DS2003 High Current/Voltage Darlington Drivers Check for Samples: DS2003 FEATURES DESCRIPTION • • • • • • The DS2003 comprises seven high voltage, high current NPN Darlington transistor pairs. All units feature a common emitter and open collector outputs. To maximize their effectiveness, these units contain suppression diodes for inductive loads and appropriate emitter base resistors for leakage. 1 2 Seven High Gain Darlington Pairs High Output Voltage (VCE = 50V) High Output Current (IC = 350 mA) TTL, PMOS, CMOS Compatible Suppression Diodes for Inductive Loads Extended Temperature Range The DS2003 has a series base resistor to each Darlington pair, thus allowing operation directly with TTL or CMOS operating at supply voltages of 5.0V. The DS2003 offers solutions to a great many interface needs, including solenoids, relays, lamps, small motors, and LEDs. Applications requiring sink currents beyond the capability of a single output may be accommodated by paralleling the outputs. Connection Diagram Top View IN A IN B IN C IN D IN E IN F IN G GND 1 2 3 4 5 6 7 16 A 15 B 14 C 13 D 12 E 11 F 10 G 8 9 OUT A OUT B OUT C OUT D OUT E OUT F OUT G COMMON Figure 1. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2000–2013, Texas Instruments Incorporated DS2003 SNLS394J – JANUARY 2000 – REVISED APRIL 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) −65°C to +150°C Storage Temperature Range Operating Temperature Range, TA −40°C to +125°C DS2003T −40°C to +85°C DS2003C −40°C to +150°C Junction Temperature Range, TJ Lead Temperature Soldering, 10 seconds 265°C ESD Ratings Human Body Model +/-2000V Machine Model +/- 200V Package Thermal Dissipation Ratings NFG0016E Package θJ-A 88°C/W D0016A Package θJ-A 115°C/W −0.3V to 30V Input Voltage Output Voltage 55V Emitter-Base Voltage 6.0V Continuous Collector Current 500 mA Continuous Base Current (1) (2) 25 mA “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be specified. They are not meant to imply that the devices should be operated at these limits. The Electrical Characteristics provide conditions for actual device operation. If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications. Electrical Characteristics TA = 25°C, unless otherwise specified (1) Parameter ICEX Output Leakage Current Test Conditions Min Typ Max Units TA = 25°C, VCE = 50V (Figure 6) 20 μA TA = 85°C, VCE = 50V (Figure 6) 100 TA = 125°C, VCE = 50V (Figure 6) for DS2003T VCE(Sat) Collector-Emitter Saturation Voltage 150 IC = 350mA, IB = 500μA (Figure 8) (2) 1.25 1.6 IC = 200mA, IB = 350μA (Figure 8) 1.1 1.3 IC = 100mA, IB = 250μA (Figure 8) 0.9 1.1 0.93 1.35 II(ON) Input Current VI = 3.85V (Figure 9) II(OFF) Input Current IC = 500µA (Figure 10) 50 100 TA = +25°C 50 100 TA = +85°C 25 50 TA = +125C for DS2003T 10 25 VI(ON) (3) Input Voltage (4) mA μA VCE = 2.0V, IC = 200mA (Figure 11) 2.4 VCE = 2.0V, IC = 250mA (Figure 11) 2.7 VCE = 2.0V, IC = 300mA (Figure 11) 3.0 V CI Input Capacitance 30 pF tPLH Turn-On Delay 0.5 VI to 0.5 VO 1.0 μs tPHL Turn-Off Delay 0.5 VI to 0.5 VO 1.0 μs (1) (2) (3) (4) 2 15 V All limits apply to the complete Darlington series except as specified for a single device type. Under normal operating conditions these units will sustain 350 mA per output with VCE (Sat) = 1.6V at 70°C with a pulse width of 20 ms and a duty cycle of 30%. The II(OFF) current limit ensured against partial turn-on of the output. The VI(ON) voltage limit ensures a minimum output sink current per the specified test conditions. Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: DS2003 DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 Electrical Characteristics (continued) TA = 25°C, unless otherwise specified (1) Parameter IR VF Clamp Diode Leakage Current Clamp Diode Forward Voltage Test Conditions Min Typ Max TA = 25°C 5 10 TA = 85°C 10 50 TA = 125°C for DS2003T 20 100 IF = 350mA (Figure 13) 1.7 2.0 VR = 50V (Figure 12) µA Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: DS2003 Units V 3 DS2003 SNLS394J – JANUARY 2000 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics 4 Collector Current vs Saturation Voltage Collector Current vs Input Current Figure 2. Figure 3. Input Current vs Input Voltage Peak Collector Current vs Duty Cycle and Number of Outputs (N16E Package) Figure 4. Figure 5. Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: DS2003 DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 EQUIVALENT CIRCUITS Test Circuits Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: DS2003 5 DS2003 SNLS394J – JANUARY 2000 – REVISED APRIL 2013 www.ti.com Typical Applications V+ Input A Input B Input C Input D Input E Input F Input G GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 LED Test Figure 14. Typical LED Driver VDD V+ 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Figure 15. Typical Relay Driver 6 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: DS2003 DS2003 www.ti.com SNLS394J – JANUARY 2000 – REVISED APRIL 2013 REVISION HISTORY Changes from Revision I (April 2013) to Revision J • Page Changed layout of National Data Sheet to TI format ............................................................................................................ 6 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: DS2003 7 PACKAGE OPTION ADDENDUM www.ti.com 7-Oct-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) DS2003CM ACTIVE SOIC D 16 48 TBD Call TI Call TI -40 to 125 DS2003CM DS2003CM/NOPB ACTIVE SOIC D 16 48 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 DS2003CM DS2003CMX/NOPB ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 DS2003CM DS2003TM ACTIVE SOIC D 16 48 TBD Call TI Call TI -40 to 125 DS2003TM DS2003TM/NOPB ACTIVE SOIC D 16 48 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 DS2003TM DS2003TMX ACTIVE SOIC D 16 2500 TBD Call TI Call TI -40 to 125 DS2003TM DS2003TMX/NOPB ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 DS2003TM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 7-Oct-2013 (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant DS2003CMX/NOPB SOIC D 16 2500 330.0 16.4 6.5 10.3 2.3 8.0 16.0 Q1 DS2003TMX SOIC D 16 2500 330.0 16.4 6.5 10.3 2.3 8.0 16.0 Q1 DS2003TMX/NOPB SOIC D 16 2500 330.0 16.4 6.5 10.3 2.3 8.0 16.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS2003CMX/NOPB SOIC D 16 2500 367.0 367.0 35.0 DS2003TMX SOIC D 16 2500 367.0 367.0 35.0 DS2003TMX/NOPB SOIC D 16 2500 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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