DCCOM DXTA13

DC COMPONENTS CO., LTD.
R
DXTA13
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for applications requiring extremely high
current gain.
SOT-89
Pinning
.063(1.60)
.055(1.40)
.066(1.70)
.059(1.50)
1 = Base
2 = Collector
3 = Emitter
Characteristic
Symbol
Rating
Collector-Base Voltage
VCBO
30
V
VCES
30
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
300
mA
Total Power Dissipation
PD
1
W
Junction Temperature
TJ
+150
o
-55 to +150
o
TSTG
1
Unit
Collector-Emitter Voltage
Storage Temperature
.102(2.60)
.095(2.40)
.167(4.25)
.159(4.05)
Absolute Maximum Ratings(TA=25oC)
.020(0.51)
.014(0.36)
2
3
.060(1.52)
.058(1.48)
.016(0.41)
.014(0.35)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Collector-Base Breakdown Volatge
Symbol
Min
Typ
Max
Unit
BVCBO
30
-
-
V
Test Conditions
IC=100µA, IE=0
Collector-Emitter Breakdown Voltage
BVCES
30
-
-
V
IC=100µA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
10
-
-
V
IE=10µA, IC=0
ICBO
-
-
100
nA
VCB=30V, IE=0
Collector Cutoff Current
Emitter Cutoff Current
IEBO
-
-
100
nA
VEB=10V, IC=0
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
-
1.5
V
IC=100mA, IB=0.1mA
Base-Emitter On Voltage(1)
VBE(on)
-
-
2
V
IC=100mA, VCE=5V
hFE1
5K
-
-
-
IC=10mA, VCE=5V
hFE2
10K
-
-
-
IC=100mA, VCE=5V
125
-
-
MHz
DC Current Gain(1)
Transition Frequency
(1)Pulse Test: Pulse Width
fT
380µs, Duty Cycle
2%
VCE=5V, f=100MHz, IC=10mA