DC COMPONENTS CO., LTD. R DXTA13 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring extremely high current gain. SOT-89 Pinning .063(1.60) .055(1.40) .066(1.70) .059(1.50) 1 = Base 2 = Collector 3 = Emitter Characteristic Symbol Rating Collector-Base Voltage VCBO 30 V VCES 30 V Emitter-Base Voltage VEBO 10 V Collector Current IC 300 mA Total Power Dissipation PD 1 W Junction Temperature TJ +150 o -55 to +150 o TSTG 1 Unit Collector-Emitter Voltage Storage Temperature .102(2.60) .095(2.40) .167(4.25) .159(4.05) Absolute Maximum Ratings(TA=25oC) .020(0.51) .014(0.36) 2 3 .060(1.52) .058(1.48) .016(0.41) .014(0.35) .120(3.04) .117(2.96) .181(4.60) .173(4.40) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Collector-Base Breakdown Volatge Symbol Min Typ Max Unit BVCBO 30 - - V Test Conditions IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCES 30 - - V IC=100µA, IB=0 Emitter-Base Breakdown Volatge BVEBO 10 - - V IE=10µA, IC=0 ICBO - - 100 nA VCB=30V, IE=0 Collector Cutoff Current Emitter Cutoff Current IEBO - - 100 nA VEB=10V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 1.5 V IC=100mA, IB=0.1mA Base-Emitter On Voltage(1) VBE(on) - - 2 V IC=100mA, VCE=5V hFE1 5K - - - IC=10mA, VCE=5V hFE2 10K - - - IC=100mA, VCE=5V 125 - - MHz DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width fT 380µs, Duty Cycle 2% VCE=5V, f=100MHz, IC=10mA