NELLSEMI 16T10H-CW

16T Series
SEMICONDUCTOR
RoHS
RoHS
TRIACs, 16A
Snubberless, Logic Level and Standard
Features
● Medium current Triac
● Low thermal resistance with clip bonding
● Low thermal resistance insulation ceramic
for insulated 16T
● High commutation (4Q) or very high
commutation (3Q) capability
● RoHS compliant, UL certified (File NO:E320098)
● Insulated tab (16TxxAI series, rated at 2500 V RMS )
TO-263 (D²PAK)
(16Txx H)
A2
Applications
● Snubberless versions (With Suffix W)
especially recommended for use on
inductive loads, because of their high
commutation performances
● On/off or phase angle function in applications
such as static relays, light dimmers and
appliance motor speed controllers
A1
A2
G
1
TO-220AB (non-Insulated)
(16Txx A)
2
3
TO-220AB (lnsulated)
(16Txx AI)
Description
Available either in through-hole or surface-mount
packages, the 16TxxA and 16TxxAl triacs series are
suitable for general purpose mains power AC switcging
SYMBOL
VALUE
UNIT
I T(RMS)
16
A
V DRM /V RRM
to
V
I GT(Q1)
5 to 50
mA
Device summary
SYMBOL
PARAMETER
IT(RMS)
On-state RMS current
VDRM/VRRM
Repetitive peak off-state voltage
IGT(Snubberless)
16TxxAI(1)
16TxxA
16
16
600/800/1000
600/800/1000
Triggering gate current
35/50
35/50
IGT(logic level)
Triggering gate current
10
10
IGT(standard)
Triggering gate current
25/50
25/50
Note 1: Insulated
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Page 1 of 7
16T Series
SEMICONDUCTOR
RoHS
RoHS
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RMS on-state current (full sine wave)
TEST CONDITIONS
ITSM
Tc = 86ºC
F =50 Hz
t = 20 ms
160
F =60 Hz
t = 16.7 ms
168
t p = 10 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
F =100 Hz
Peak gate current
IGM
T p =20 µs
PG(AV)
Storage temperature range
Operating junction temperature range
A
TO-220insulate
2
Average gate power dissipation
16
Tc = 110ºC
I t
I2t Value for fusing
UNIT
TO-220/TO-263
IT(RMS)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
VALUE
A
128
A2s
T j =125ºC
50
A/µs
T j =125ºC
4
A
1
W
T j =125ºC
Tstg
- 40 to + 150
Tj
- 40 to + 125
ºC
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
16Txxxx
SYMBOL
IGT(1)
TEST CONDITIONS
Unit
V D = V DRM , R L = 3.3KΩ
T j = 125°C
IH(2)
I T = 500 mA
IL
I G = 1.2 I GT
(dI/dt)c(2)
CW
BW
10
35
50
I - II - III
MAX.
I - II - III
MAX.
1.3
V
I - II - III
MIN.
0.2
V
MAX.
I - III
dV/dt(2)
SW
mA
V D = 12 V, R L = 33Ω
VGT
VGD
QUADRANT
II
V D = 67% V DRM , gate open ,T j = 125°C
MIN.
(dV/dt)c = 0.1 V/µs
T j = 125°C
(dV/dt)c = 10 V/µs
T j = 125°C
Without snubber
T j = 125°C
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
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MAX.
Page 2 of 7
MIN.
15
40
55
25
50
70
30
60
80
40
500
1000
8.5
-
-
3
-
-
-
8.5
14
mA
mA
V/µs
A/ms
16T Series
SEMICONDUCTOR
RoHS
RoHS
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
16Txxxx
TEST CONDITIONS
SYMBOL
QUADRANT
I - II - III
IGT(1)
V D = 12 V, R L = 33Ω
C
MAX.
IV
VGT
VGD
V D = V DRM , R L = 3.3KΩ, T j = 125°C
IH(2)
I T = 500 mA
IL
I G = 1.2 I GT
(dV/dt)c(2)
25
50
50
100
mA
ALL
1.3
V
ALL
0.2
V
MAX.
I - III - IV
MAX.
II
dV/dt(2)
UNIT
B
mA
25
50
40
60
80
120
mA
V D = 67% V DRM , gate open, T j = 125°C
MIN.
200
400
V/µs
(dI/dt)c = 7 A/ms, T j = 125°C
MIN.
5
10
V/µs
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
VALUE
UNIT
MAX.
1.55
V
T j = 125°C
MAX.
0.85
V
Dynamic resistance
T j = 125°C
MAX.
25
mΩ
VD = VDRM
T j = 25°C
5
µA
VR = VRRM
T j = 125°C
1
mA
VALUE
UNIT
TO-220AB, D²PAK
TO-220AB Insulated
1.2
2.1
°C/W
D²PAK
45
TO-220AB Insulated, TO-220AB
60
VTM(2)
I TM = 22.5 A, t P = 380 µs
T j = 25°C
Vt0(2)
Threshold voltage
R d (2)
IDRM
IRRM
MAX.
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
S (1)=1cm²
°C/W
Note 1: S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE (x x)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
V
50 mA
Standard
TO-220AB
V
V
50 mA
Snubberless
TO-220AB
V
V
V
25 mA
Standard
TO-220AB
16TxxA-CW/16TxxAl-CW
V
V
V
35 mA
Snubberless
TO-220AB
16TxxA-SW/16TxxAl-SW
V
V
V
10 mA
Logic level
TO-220AB
16TxxH-SW
V
V
V
10 mA
Logic level
D²PAK
16TxxH-CW
V
V
V
35 mA
Snubberless
D²PAK
600 V
800 V
1000 V
16TxxA-B/1 6TxxAl-B
V
V
16TxxA-BW/16TxxAl-BW
V
16TxxA-C/16TxxAl-C
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Page 3 of 7
16T Series
SEMICONDUCTOR
RoHS
RoHS
ORDERING INFORMATION
ORDERING TYPE
MARKING
PACKAGE
WEIGHT
BASE Q,TY
DELIVERY MODE
16TxxA-yy
16TxxA-yy
TO-220AB
2.0g
50
Tube
16TxxAI-yy
16TxxAI-yy
TO-220AB (insulated)
2.3g
50
Tube
16TxxH-yy
16TxxH-yy
TO-236(D 2 PAK)
2.0g
50
Tube
Note: xx = voltage, yy = sensitivity
ORDERING INFORMATION SCHEME
16 T 06
Current
16 = 16A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
H = TO-263 (D²PAK)
IGT Sensitivity
B = 50mA Standard
C = 25mA Standard
SW = 10mA Logic Level
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BW = 50mA Snubberless
CW = 35mA Snubberless
Page 4 of 7
A - BW
16T Series
SEMICONDUCTOR
Fig.1 Maximum power dissipation versus
on-state rms current (full cycle)
RoHS
RoHS
Fig.2 On-state rms current versus case
temperature (full cycle)
IT(RMS)(A)
P(W)
18
20
18
16
16
14
14
12
12
TO-263AB
TO-220AB
insulated
10
10
8
8
6
6
4
4
2
2
IT(RMS)(A)
0
0
8
6
4
2
12
10
14
16
Fig.3 On-state current versus ambient
temperature (full cycle)
50
25
0
100
75
125
Fig.4 Relative variation of thermal impedance
versus pulse duration
K=[Zth /Rth]
IT(RMS)(A)
4.0
TC(°C)
0
1E+0
printed circuit board Fr4, copper thickness:35 µm
D²PAK
(S=1cm²)
3.5
Zth(j-c)
3.0
Zth(j-a)
2.5
1E-1
2.0
1.5
1.0
0.5
Tc(°c)
0.0
0
50
25
100
75
125
ITM(A)
100
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig.6 surge peak on- state current versus
number of cycles
Fig.5 On-state characteristics (maximum values)
200
tp(s)
1E-2
1E-3
180
Tj max.
Vto=0.85V
Rd=25mΩ
160
Tj=Tjmax.
120
ITSM(A)
t=20ms
140
One cycle
Non repetitive
Tjinitial=25°C
100
Tj=25°c
Repetitive
Tc=85°C
80
10
60
40
20
V TM (V)
1
Number of cycles
0
0.5
1.0
1.5
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2.0
2.5
3.0
3.5
4.0
4.5
5.0
Page 5 of 7
1
10
100
1000
16T Series
SEMICONDUCTOR
Fig7. Non-repetitive surge peak on-state
current for a sinusoidal
RoHS
RoHS
Fig.8 Relative variation of gate trigger current
ITSM(A), I²t(A²S)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25°C]
3000
2.5
Tj initial=25°C
dl/dt limitation:
50A/µs
holding current and latching current versus junction
temperature (typical values)
2.0
IGT
1000
lTSM
1.5
1.0
IH&IL
0.5
pulse with width tp<10ms and
corresponding value of l²t
100
0.10
0.01
l²t
Tj(°C)
0.0
-40
10.00
1.00
0
-20
20
60
40
80
100
120
140
tp(ms)
Fig.9 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
Fig.10 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
6
snubberless and Logic level types
1.8
(dI/dt)c [Tj ] / (dI/dt)c [Tj s pecified]
standard types
SW
5
C
1.6
B
4
1.4
1.2
3
CW/BW
1.0
2
0.8
1
0.6
Tj(°C)
(dV/dt)c (V/µs)
0.4
0.1
1.0
0
100.0
10.0
50
25
0
75
Fig.11 D²PAK thermal resistance junction to ambient versus
copper surface under tab (printed circuit FR4, copper
thickness: 35µm
Rth(j-a)(°C/W)
80
70
60
50
D²PAK
40
30
20
10
S(cm²)
0
0
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4
8
12
16
20
Page 6 of 7
24
28
32
36
40
100
125
16T Series
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-263(D 2 PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
6.22 (0.245)
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
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Page 7 of 7
2.79 (0.110)
RoHS
RoHS