2SA1417 / 2SC3647 Ordering number : EN2006D SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs • • • • Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--)120 V (--)100 V (--)6 V Collector Current VEBO IC (--)2 A Collector Current (Pulse) ICP Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) (--)3 A 500 mW 1.5 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 2.5 1.0 1 2 0.4 Packing Type: TD 4.0 1.5 2SA1417S-TD-E 2SA1417T-TD-E 2SC3647S-TD-E 2SC3647T-TD-E TD 3 Marking 3.0 RANK RANK 2SA1417 0.75 LOT No. AC 1.5 CC 0.5 LOT No. 0.4 2SC3647 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP 1 2 1 3 2SA1417 3 2SC3647 http://www.sanyosemi.com/en/network/ 90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/7 2SA1417 / 2SC3647 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions Ratings min typ max Unit ICBO IEBO VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)100mA Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)100mA (--0.22)0.13 (--0.6)0.4 V IC=(--)1A, IB=(--)100mA (--)0.85 (--)1.2 V Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 100* VCE=(--)10V, IC=(--)100mA (--)100 nA (--)100 nA 400* 120 MHz (25)16 pF V(BR)CBO V(BR)CEO IC=(--)10μA, IE=0A (--)120 V IC=(--)1mA, RBE=∞ (--)100 V V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. (--)6 V (80)80 ns (750)1000 ns (40)50 ns * : The 2SA1417 / 2S3647 are classified by 100mA hFE as follws : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL + 50Ω 100μF VBE= --5V + 470μF VCC=50V IC=10IB1= --10IB2=0.7A For PNP, the polarity is reversed. Ordering Information Package Shipping 2SA1417S-TD-E Device PCP 1,000pcs./reel 2SA1417T-TD-E PCP 1,000pcs./reel 2SC3647S-TD-E PCP 1,000pcs./reel 2SC3647T-TD-E PCP 1,000pcs./reel memo Pb Free No.2006-2/7 2SA1417 / 2SC3647 IC -- VCE --2.0 2SC3647 --10mA --1.2 --5mA --0.8 --3mA --2mA --1mA --0.4 --1 --2 --3 10mA 5mA 0.8 3mA 2mA IB=0mA 0 0 5.0 Collector Current, IC -- A --4mA --3mA --0.6 --2mA --0.4 --1mA 3 4 5 ITR03543 IC -- VCE --5m --0.8 2 1.0 2SA1417 A 1 Collector-to-Emitter Voltage, VCE -- V ITR03542 mA A m --6 20mA 1.2 --5 IC -- VCE --1.0 1.6 1mA --4 Collector-to-Emitter Voltage, VCE -- V 40mA 30mA A 50m 0.4 IB=0mA 0 0 Collector Current, IC -- A Collector Current, IC -- A Collector Current, IC -- A --1.6 IC -- VCE 2.0 A A 0m 0m --4 --3 A --20m 2SA1417 2SC3647 A 4.5m 4.0mA 3.5mA 0.8 3.0mA 2.5mA 0.6 2.0mA 0.4 1.5mA 1.0mA 0.2 --0.2 0.5mA 0 0 IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 40 50 ITR03545 IC -- VBE 2SC3647 VCE=5V --1.2 --0.8 1.6 1.2 °C 25°C --25°C --1.6 0.8 Ta=7 5 Collector Current, IC -- A 2.0 Ta=7 5°C 25°C --25°C Collector Current, IC -- A 30 2SA1417 VCE= --5V --0.4 0.4 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03546 0 0.8 1.0 1.2 ITR03547 hFE -- IC 2SC3647 VCE=5V 5 DC Current Gain, hFE Ta=75°C 25°C 2 --25°C 100 3 100 7 5 5 --2 --3 --5 --7 --0.1 --2 --3 --5 --7 --1.0 Collector Current, IC -- A --2 --3 ITR03548 Ta=75°C 25°C --25°C 2 7 --7--0.01 0.6 7 5 3 0.4 1000 2SA1417 VCE= --5V 7 0.2 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 DC Current Gain, hFE 20 2.4 --2.0 3 10 Collector-to-Emitter Voltage, VCE -- V ITR03544 IC -- VBE --2.4 IB=0mA 0 --50 3 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR03549 No.2006-3/7 2SA1417 / 2SC3647 f T -- IC 2 1 2SA 7 64 C3 7 2S 5 3 2 For PNP minus sign is omitted. 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2SA 3 141 7 2SC 364 7 2 10 7 3 7 3 5 3 2 --100 C 25° 5°C 7 = Ta 7 5 3 2 2 1.0 3 5 --25°C 7 2 10 3 5 7 100 2 ITR03551 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 1000 2SA1417 IC / IB=10 7 For PNP minus sign is omitted. ITR03550 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 VCE(sat) -- IC --1000 --10 2SC3647 IC / IB=10 7 5 3 2 100 25°C Tc=75°C 7 5 3 --25°C 2 10 7 2 --0.01 3 5 --0.1 2 3 5 Collector Current, IC -- A 7 7 --1.0 2 3 7 0.01 3 2 25°C 7 75°C 2 7 --0.01 3 5 7 2 3 5 --0.1 Collector Current, IC -- A 7 --1.0 2 3 5 7 1.0 2 3 ITR03553 VBE(sat) -- IC 2SC3647 IC / IB=10 5 3 2 Ta= --25°C 1.0 25°C 7 75°C 5 7 0.01 3 s m 10 s 0m 1.0 7 5 s DC op era 3 2 tio n 0.1 7 5 3 For PNP minus sign is omitted. Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) 2 0.01 7 5 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Emitter Voltage, VCE -- 7 100 2 V ITR03556 5 7 0.1 2 3 5 7 1.0 2 3 ITR03555 PC -- Ta 1.8 2SA1417 / 2SC3647 1m 10 IC=2A 3 Collector Current, IC -- A ASO ICP=3A 2 ITR03554 Collector Dissipation, PC -- W 3 2 2 3 3 5 7 0.1 7 5 5 5 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 Ta= --25°C 3 Collector Current, IC -- A 2SA1417 IC / IB=10 --1.0 2 ITR03552 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 5 10 Collector Current, IC -- A 2SA1417 / 2SC3647 f=1MHz 7 417 100 Cob -- VCB 100 2SA1417 / 2SC3647 VCE=10V Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 3 2SA1417 / 2SC3647 1.6 1.5 M ou 1.4 nt 1.2 ed on ac er 1.0 am ic bo ar d 0.8 (2 50 m 0.6 0.5 0.4 Infin ite h eat s m2 ✕ 0.8 m ink m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10757 No.2006-4/7 2SA1417 / 2SC3647 Embossed Taping Specification 2SA1417S-TD-E, 2SA1417T-TD-E, 2SC3647S-TD-E, 2SC3647T-TD-E No.2006-5/7 2SA1417 / 2SC3647 Outline Drawing Land Pattern Example 2SA1417S-TD-E, 2SA1417T-TD-E, 2SC3647S-TD-E, 2SC3647T-TD-E Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.2006-6/7 2SA1417 / 2SC3647 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No.2006-7/7