Photodiode EPD-880-3-0.9 6/21/2007 Preliminary rev. 02/07 Wavelength Type Technology Case Infrared Integrated filter AlGaAs/GaAs 3 mm plastic lens 3,4 - 0,3 4,8 - 0,4 0,6 - 0,2 2,54 2,9 - 2,0 Anode Note: Special packages with standoff available on request Applications 3,7 - 0,2 1,8 -0,6 0,6 - 0,2 29 - 2,0 Description Selective photodiode mounted in standard 3 mm package without standoff. Narrow bandwidth and high spectral sensitivity in the infrared range (810…950 nm). 6,1 - 0,4 Alarm systems, light barriers, special sensors, analytics, optical communication Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.62 mm² Temperature coefficient of ID TC(ID) 5 %/K Operating temperature range Tamb -20 to +85 °C Storage temperature range Tstg -30 to +100 °C Tsld 260 °C ϕ 60 deg. Typ Max Unit Active area t ≤ 3 s, 3 mm from case Soldering Temperature Acceptance angle at 50% Sλ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min IR = 10 µA VR 5 Dark current VR = 1 V ID 1.0 Peak sensitivity wavelength VR = 0 V λp 890 nm Responsivity at λP VR = 0 V Sλ 0.3 0.55 A/W VR = 0 V λmin, λmax 800 VR = 0 V ∆λ0.5 115 Shunt resistance VR = 10 mV RSH 115 Noise equivalent power λ = 880 nm Specific detectivity λ = 880 nm D* Junction capacitance VR = 0 V CJ 120 pF Switching time (RL = 50 Ω) VR = 1 V tr , tf 200 ns VR = 0 V Ee = 1mW/cm² IPh 14 µA Breakdown voltage1) Sensitivity range at 10% 1) Spectral bandwidth at 50% Photo-current at λP = 875 nm 1) 2) NEP V 2.5 960 3.3x10 nA nm nm GΩ -14 2.4x10 W/ Hz cm ⋅ Hz ⋅ W −1 12 for information only Halogen lamp source with appropriate filter Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° RD (typ.) [GΩ] Quantity EPD-880-3-0.9 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-880-3-0.9 6/21/2007 Preliminary Typical spectral response [A/W] rev. 02/07 Relative Photocurrent vs. Temperature 0,6 1,30 1,25 0,5 UR = 5V TK = 0,25%/K 1,20 0,4 R elative Photocurrent 1,15 0,3 0,2 0,1 1,10 1,05 1,00 0,95 0,90 0,85 0,0 0,80 700 750 800 850 900 Wavelength [nm] 950 -40 1000 -20 0 20 40 60 80 100 120 Temperature (°C) Dark Current vs. Temperature Short-circuit current vs. irradiance (typical) 2) 100 3 10 UR = 1V TK = 1,05 times/K 2 Short-circuit current (nA) Dark Current (pA) 10 1 10 1 10 0 10 -1 10 0,1 -2 10 -40 -20 0 20 40 Temperature (°C) 60 80 100 120 -2 10 -1 10 0 10 2 Irradiance [mW/cm ] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 10 2 10 2 of 2