FDMC8622 N-Channel Power Trench® MOSFET 100 V, 16 A, 56 m: Features General Description Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Application 100% UIL Tested DC-DC Primary Switch Termination is Lead-free and RoHS Compliant D D D D S S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3X3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TJ, TSTG ±20 V 16 -Continuous (Silicon limited) TC = 25 °C 16 -Continuous TA = 25 °C 4 -Pulsed PD Units V TC = 25 °C A 30 Single Pulse Avalanche Energy EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 37 31 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient (Note 1) 4.0 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMC8622 Device FDMC8622 ©2012 Fairchild Semiconductor Corporation FDMC8622 Rev.C2 Package MLP 3.3X3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC8622 N-Channel Power Trench® MOSFET September 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 69 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C VGS = 10 V, ID = 4 A 43.7 56 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 3 A 59.9 90 VGS = 10 V, ID = 4 A, TJ = 125 °C 76.4 98 VDD = 10 V, ID = 4 A 8.9 VDS = 50 V, VGS = 0 V, f = 1 MHz 302 402 pF 72.5 96 pF 4.2 6 pF gFS Forward Transconductance 2 2.9 -9 mV/°C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance : 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) 5.9 12 1.6 10 ns ns 10.2 18 ns VDD = 50 V, ID = 4 A, VGS = 10 V, RGEN = 6 : 2.2 10 ns Total Gate Charge VGS = 0 V to 10 V 5.2 7.3 nC Qg(TOT) Total Gate Charge VGS = 0 V to 5 V 3.0 4.1 Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 4 A nC 1.4 nC 1.4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 4 A VGS = 0 V, IS = 1.7 A IF = 4 A, di/dt = 100 A/Ps (Note 2) (Note 2) 0.8 1.3 0.8 1.2 V 36 57 ns 28 45 nC NOTES: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 3.0 mH, IAS = 5.0 A, VDD = 100 V, VGS = 10 V. ©2012 Fairchild Semiconductor Corporation FDMC8622 Rev.C2 2 www.fairchildsemi.com FDMC8622 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 VGS = 7 V ID, DRAIN CURRENT (A) 25 VGS = 6.5 V 20 VGS = 6 V 15 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 10 VGS = 5 V 5 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 3 VGS = 6 V 2 0 4 VGS = 10 V VGS = 7 V 0 5 10 15 20 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 0.5 ID = 4 A 1.8 V = 10 V GS rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 6.5 V 1 Figure 1. On-Region Characteristics PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 0.4 ID = 4 A 0.3 0.2 TJ = 125 oC 0.1 TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 0.0 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 30 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 20 15 TJ = 150 oC TJ = 25 oC 5 TJ = 0 3 -55 oC 6 VGS = 0 V 10 TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.4 9 VGS, GATE TO SOURCE VOLTAGE (V) 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMC8622 Rev.C2 10 40 25 0 8 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 10 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX VGS = 5 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC8622 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 ID = 4 A VDD = 25 V 8 Ciss VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = 75 V 4 100 Coss 10 2 0 0 1 2 3 4 5 1 0.1 6 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 5 20 4 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) TJ = 25 oC 3 TJ = 100 oC 2 TJ = 125 oC 15 VGS = 10 V 10 Limited by Package VGS = 6 V 5 o RTJC = 4.0 C/W 1 0.01 0.1 1 0 25 10 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 10 P(PK), PEAK TRANSIENT POWER (W) 100 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) I D , DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 100 Ps THIS AREA IS LIMITED BY r DS(on) 0.1 0.01 1 ms 10 ms 100 ms 1s 10 s DC SINGLE PULSE TJ = MAX RATED RTJA = 125 oC/W TA = 25 o C 0.001 0.01 0.1 1 10 100 500 SINGLE PULSE RTJA = 125o C/W TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (s) VDS , DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC8622 Rev.C2 VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC8622 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC8622 Rev.C2 5 www.fairchildsemi.com FDMC8622 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8622 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC8622 Rev.C2 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMC8622 Rev.C2 7 www.fairchildsemi.com FDMC8622 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PowerTrench® 2Cool™ The Power Franchise® F-PFS™ ® AccuPower™ PowerXS™ FRFET® AX-CAP™* Global Power ResourceSM Programmable Active Droop™ Green Bridge™ BitSiC® QFET® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Current Transfer Logic™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ SmartMax™ and Better™ Dual Cool™ TranSiC® SMART START™ MegaBuck™ EcoSPARK® TriFault Detect™ Solutions for Your Success™ EfficentMax™ MICROCOUPLER™ TRUECURRENT®* SPM® ESBC™ MicroFET™ PSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™