FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Symbol VDS VGS Pt* Tstg Tch Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Unit V V mW °C °C Rating 3.5 -3.0 180 -65 to +175 175 *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Saturated Drain Current IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 2V, VGS = 0V 10 30 60 mA Transconductance gm VDS = 2V, IDS = 10mA 35 50 - mS Pinch-off Voltage Vp VDS = 2V, IDS = 1mA -0.1 -0.7 -1.5 V IGS = -10µA -3.0 - - V - 0.45 0.50 dB 11.0 13.0 - dB - 0.55 0.60 dB 11.0 13.0 - dB - 220 300 °C/W Gate Source Breakdown Voltage Noise Figure VGSO NF FHX13X Gas Associated Gain Noise Figure NF FHX14X Associated Gain Gas Thermal Resistance Rth VDS = 2V IDS = 10mA f = 12GHz Channel to Case Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.2 July 1999 1 FHX13X, FHX14X GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 Drain Current (mA) 150 100 50 3.0 VGS =0V 20 -0.2V 10 -0.4V Ambient Temperature (°C) NF & Gas vs. IDS OUTPUT POWER vs. INPUT POWER 50 100 150 0 200 14 f=12GHz VDS=2V 13 Gas 2.0 12 1.5 11 1.0 10 0.5 20 NF 10 f=12GHz VDS=2V IDS=10mA 15 10 5 20 0 -10 30 Drain Current (mA) 2 4 6 8 10 12 14 16 18 20 22 24 Γopt (MAG) (ANG) 0.92 0.84 0.77 0.71 0.66 0.61 0.58 0.56 0.54 0.52 0.50 0.46 13 25 38 51 65 79 93 108 122 136 150 162 -5 0 5 Input Power (dBm) 10 Ga (max) & |S21|2 vs. FREQUENCY NOISE PARAMETERS VDS=2V, IDS=10mA Freq. (GHz) 4 9 25 NFmin (dB) Rn/50 0.28 0.30 0.32 0.34 0.39 0.45 0.56 0.68 0.86 1.03 1.22 1.43 0.65 0.54 0.41 0.31 0.23 0.17 0.12 0.09 0.07 0.07 0.07 0.07 VDS=2V IDS=10mA 20 Gain (dB) Noise Figure (dB) 2.5 30 -0.6V -0.8V 1 2 3 Drain-Source Voltage (V) Output Power (dBm) 0 0 Associated Gain (dB) Total Power Dissipation (W) 200 Ga (max) 15 10 |S21|2 5 0 4 6 8 1012 Frequency (GHz) 2 20 FHX13X, FHX14X GaAs FET & HEMT Chips S11 S22 +j50 S21 S12 +90° +j100 +j25 12 24 +j250 +j10 0 24 25 10 50Ω 100 1 1 GHZ 1 GHZ 180° 12 .05 1 GHZ 1 GHZ 24 .10 .15 .20 SCALE FOR |S12| 1 24 SCALE FOR |S21| 12 -j10 -j250 12 -j25 -j100 2 3 4 5 -90° -j50 S-PARAMETERS VDS = 2V, IDS = 10mA FREQUENCY (MHZ) 100 500 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 21000 22000 23000 24000 S11 S21 S12 MAG ANG MAG ANG MAG 1.000 0.999 0.995 0.981 0.958 0.929 0.895 0.860 0.823 0.786 0.751 0.718 0.687 0.659 0.633 0.610 0.590 0.572 0.556 0.543 0.532 0.523 0.516 0.511 0.507 0.505 -0.9 -4.7 -9.4 -18.6 -27.7 -36.4 -44.9 -53.0 -60.7 -68.1 -75.3 -82.1 -88.7 -95.0 -101.2 -107.2 -113.0 -118.7 -124.2 -129.6 -134.9 -140.0 -145.0 -149.8 -154.6 -159.2 4.899 4.894 4.876 4.806 4.696 4.555 4.392 4.215 4.034 3.852 3.675 3.506 3.345 3.194 3.054 2.923 2.801 2.688 2.584 2.487 2.397 2.314 2.236 2.164 2.096 2.033 179.2 175.9 171.9 163.9 156.1 148.6 141.5 134.8 128.4 122.4 116.8 111.5 106.5 101.8 97.3 93.0 88.9 85.0 81.3 77.7 74.2 70.8 67.5 64.4 61.3 58.3 0.001 0.006 0.013 0.025 0.037 0.048 0.057 0.066 0.074 0.080 0.086 0.092 0.096 0.101 0.105 0.108 0.112 0.116 0.120 0.124 0.129 0.133 0.138 0.144 0.150 0.156 S22 ANG 89.5 87.7 85.5 81.1 77.0 73.2 69.8 66.8 64.2 62.0 60.2 58.9 57.8 57.1 56.6 56.4 56.4 56.6 56.9 57.3 57.8 58.4 58.9 59.5 60.0 60.5 MAG ANG 0.601 0.601 0.599 0.591 0.580 0.565 0.548 0.530 0.512 0.493 0.475 0.458 0.442 0.426 0.412 0.399 0.386 0.375 0.364 0.353 0.344 0.335 0.326 0.318 0.310 0.303 -0.5 -2.3 -4.6 -9.2 -13.5 -17.7 -21.5 -25.0 -28.3 -31.3 -34.0 -36.6 -39.0 -41.3 -43.6 -45.8 -47.9 -50.1 -52.3 -54.6 -56.9 -59.4 -62.0 -64.7 -67.5 -70.5 NOTE:* The data includes bonding wires. n: number of wires Gate n=2 (0.3mm length, 20µm Dia Au wire) Drain n=2 (0.3mm length, 20µm Dia Au wire) Source n=4 (0.3mm length, 20µm Dia Au wire) 3 Download S-Parameters, click here 0° FHX13X, FHX14X GaAs FET & HEMT Chips CHIP OUTLINE 96 44 96 (Unit: µm) 154 70 350±20 60 44 60 Die Thickness: 100±20µm 450±20 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 TM SuperHEMT is a trademark of Fujitsu Limited. 4