FJN13003 FJN13003 High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast up to 21W TO-92 1 1. Emitter 2. Collector 3.Base NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 700 Units V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 1.5 A ICP *Collector Current (Pulse) 3 A IB Base Current (DC) 0.75 A IBP *Base Current (Pulse) 1.5 A PC Collector Power Dissipation(Ta=25°C) 1.1 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=500µA, IE=0 Min. 700 Typ. Max. Units V 400 V 9 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 IEBO Emitter Cut-off Current VEB=9V, IC=0 hFE DC Current Gain VCE=2V, IC=0.5A 9 VCE=2V, IC=1.0A 5 VCE (sat) Collector-Emitter Saturation Voltage IC=0.5A, IB=0.1A 0.5 IC=1.0A, IB=0.25A 1.0 V IC=1.5A, IB=0.5A 3.0 V IC=0.5A, IB=0.1A 1.0 V IC=1.0A, IB=0.25A 1.2 VBE (sat) Base-Emitter Saturation Voltage fT Current Gain Bandwidth Product VCE=10V, IC=0.1A tON Turn ON Time tSTG Storage Time tF Fall Time VCC=125V, IC=1A, IB1=0.2A, IB2=-0.2A, RL = 125Ω ©2001 Fairchild Semiconductor Corporation 10 µA 21 4 V V MHz 1.1 µs 4.0 µs 0.7 µs Rev. A, July 2001 FJN13003 Typical Characteristics (Continued) 100 2.0 IB = 500mA 1.2 IB = 100mA 0.8 IB = 50mA 0.4 hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT o VCE = 2V o Ta = 25 C Ta = 125 C 1.6 o Ta = - 40 C 10 1 IB = 0mA 0.1 1m 0.0 0 1 2 3 4 5 10m VCE [V], COLLECTOR-EMITTER VOLTAGE 100m 1 10 IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 o Ta = 25 C o Ta= - 40 C 1 0.1 0.01 0.01 0.1 1 IC = 4 IB VBE(SAT) [V], SATURATION VOLTAGE VCE(SAT) [V], SATURATION VOLTAGE o Ta = 125 C IC = 4 IB 1 o Ta = - 40 C o Ta = 125 C o Ta = 25 C 0.1 0.01 10 0.1 IC [A], COLLECTOR CURRENT 10 IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 1.4 tSTG 1 tF 0.1 IC= 5IB1= - 5IB2 VCC = 125V 0.01 0.1 1 IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time ©2001 Fairchild Semiconductor Corporation PC [W], COLLECTOR POWER DISSIPATION 10 tSTG & tF [µs], SWITCHING TIME 1 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 175 o Ta [ C], AMBIENT TEMPERATURE Figure 6. Power Derating Rev. A, July 2001 FJN13003 Typical Characteristics 10 1.6 RB2 = 0, IB1 = 1A VCC = 10V, L = 50mH IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 1.4 1 100m 10m 1.2 1.0 0.8 0.6 0.4 VBE(OFF)= - 5V 0.2 0.0 1m 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Forward Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0 200 400 600 800 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 8. Reverse Bias Safe Operating Area Rev. A, July 2001 FJN13003 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A, July 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3