KERSEMI FQPF12N60C

FQP12N60C/FQPF12N60C
FQP12N60C/FQPF12N60C
600V N-Channel MOSFET
General Description
Features
•
These N-Channel enhancement mode power field effect
•
transistors are produced using Corise Semiconductorÿs proprietary,
•
planar stripe, DMOS technology.
•
•
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching •
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
Low gate charge ( typical 48 nC)
Low Crss ( typical 21 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
suited for high efficiency switch mode power supply.
D
!
●
◀
G!
G DS
TO-220
TO-220F
GD S
FQP Series
▲
●
●
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP12N60C
- Continuous (TC = 100°C)
FQPF12N60C
600
Units
V
12
12 *
7.4
7.4 *
A
A
48
48 *
A
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
12
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
22.5
4.5
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
± 30
V
870
mJ
225
1.78
51
0.41
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
FQP12N60C
0.56
FQPF12N60C
2.43
Units
°C/W
RθJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
Parameter
Test Conditions
Min
Typ
Max
Units
600
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.5
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.53
0.65
Ω
--
13
--
S
--
1760
2290
pF
--
182
235
pF
--
21
28
pF
--
30
70
ns
--
85
180
ns
--
155
120
ns
--
90
190
ns
--
48
63
nC
--
8.5
nC
--
21
nC
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 6 A
gFS
Forward Transconductance
VDS = 40 V, ID = 6 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 12 A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 12 A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
12
A
ISM
--
--
48
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 12 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
420
--
ns
Qrr
Reverse Recovery Charge
--
4.9
--
µC
VGS = 0 V, IS = 12 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
(Note 4)
FQP12N60C/FQPF12N60C
Symbol
FQP12N60C/FQPF12N60C
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
o
150 C
ID, Drain Current [A]
1
10
o
-55 C
o
25 C
0
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
0
10
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-1
10
0
2
1
10
10
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1
VGS = 10V
1.0
VGS = 20V
0.5
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
25℃
※ Note : TJ = 25℃
-1
0
5
10
15
20
25
30
35
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
12
VDS = 120V
Ciss
2000
Coss
1500
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
VGS, Gate-Source Voltage [V]
10
2500
Capacitance [pF]
10
ID, Drain Current [A]
VDS = 300V
VDS = 480V
8
6
4
2
※ Note : ID = 12A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
FQP12N60C/FQPF12N60C
1.2
3.0
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 6.0 A
0.5
0.0
-100
200
-50
0
50
100
200
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
2
Operation in This Area
is Limited by R DS(on)
2
10
10
10 µs
10 µs
100 µs
100 µs
1
10
1 ms
10 ms
1
10
ID, Drain Current [A]
ID, Drain Current [A]
150
o
TJ, Junction Temperature [ C]
o
100 ms
DC
0
1 ms
10 ms
100 ms
DC
0
10
10
※ Notes :
-1
10
※ Notes :
-1
10
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
2
10
3
10
10
14
12
ID, Drain Current [A]
10
8
6
4
2
50
75
100
0
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP12N60C
0
25
-2
10
10
VDS, Drain-Source Voltage [V]
125
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
150
Figure 9-2. Maximum Safe Operating Area
for FQPF12N60C
(t), T h e r m a l R e s p o n s e
10
Z
10
FQP12N60C/FQPF12N60C
10
0
D = 0 .5
0 .2
-1
※ N o te s :
1 . Z θ J C ( t) = 0 . 5 6 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1
θ JC
0 .0 5
0 .0 2
0 .0 1
PDM
-2
t1
s in g le p u ls e
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
10
D = 0 .5
0
0 .2
※ N o te s :
1 . Z θ J C (t) = 2 .4 3 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .1
0 .0 5
10
-1
0 .0 2
0 .0 1
θ JC
(t), T h e r m a l R e s p o n s e
Figure 11-1. Transient Thermal Response Curve for FQP12N60C
PDM
Z
t1
10
10
t2
s in g le p u ls e
-2
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF12N60C
50KΩ
Qg
200nF
12V
FQP12N60C/FQPF12N60C
VGS
Same Type
as DUT
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
ID (t)
VDS (t)
VDD
tp
Time
FQP12N60C/FQPF12N60C
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
FQP12N60C/FQPF12N60C
TO-220
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
0.35 ±0.10
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
9.75 ±0.30
MAX1.47
2.76 ±0.20
FQP12N60C/FQPF12N60C
TO-220F