Ordering number : ENN6939 FW241 N-Channel Silicon MOSFET FW241 Ultrahigh-Speed Swiching Applications Features This composite device allows high density mounting by unit : mm incorporating two MOSFET chips in one package that 2129 feature low on-resistance, ultrahigh switching speed, and drive voltage of 4.5V. The two chips have near characteristics, and especially 8 suited for HDD. [FW241] 5 1.5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.1 SANYO : SOP8 4 5.0 0.595 1.27 0.43 0.2 1.8max 1 6.0 4.4 • Package Dimensions 0.3 • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V ID 3.5 A 14 A Drain Current (DC) Drain Current (Pulse) IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (2000mm2✕0.8mm)1unit 1.4 W Tc=25°C 2.0 W 150 --55 to +150 °C °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage V(BR)DSS IDSS IGSS VGS(th) Forward Transfer Admittance yfs Conditions Ratings min typ ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 30 VDS=VGS, ID=250µA VDS=10V, ID=3.5A 1.2 3.7 Marking : W241 Unit max V 1 µA ±10 µA 2.5 V 5.3 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42501 TS IM TA-3130 No.6939-1/4 FW241 Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance Ratings Conditions RDS(on)1 RDS(on)2 min typ Unit max ID=3.5A, VGS=10V ID=1.8A, VGS=4.5V 64 84 mΩ 105 150 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 180 pF Output Capacitance Coss VDS=10V, f=1MHz 42 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit 7 ns Rise Time tr td(off) See specified Test Circuit 3 ns See specified Test Circuit 20 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 6 ns VDS=10V, VGS=10V, ID=3.5A See specified Test Circuit 5.0 nC 0.9 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A Diode Forward Voltage VSD IS=3.5A, VGS=0 Switching Time Test Circuit nC 0.88 1.2 V Electrical Connection VDD=15V VIN 0.6 10V 0V D1 D1 D2 D2 S1 G1 S2 G2 ID=1A RL=15Ω VOUT VIN D PW=10µs D.C.≤1% G FW241 P.G 50Ω S ID -- VDS 7 ID -- VGS 3.0 VDS=10V 6 1.0 0.5 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 0 1.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V IT02676 RDS(on) -- VGS 300 25°C 2 1.5 °C 3 5°C =3V VGS 2.0 Ta= 7 5V 4 --25 Drain Current, ID -- A 4V 8V 5 10V Drain Current, ID -- A 6V 2.5 4.0 IT02677 RDS(on) -- Ta 200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 250 200 ID=3.5A 1.8A 150 100 50 0 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT02678 150 4V S= VG 8A, 1. I D= 100 =10V , VGS .5A I D=3 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT02679 No.6939-2/4 FW241 yfs -- ID VDS=10V 7 5 2 C 5° = Ta 1.0 °C 75 °C 25 --2 7 5 3 3 2 0.1 7 5 3 2 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT02680 0 0.6 0.8 1.0 1.2 1.4 IT02681 Ciss, Coss, Crss -- VDS f=1MHz 7 5 3 Ciss, Coss, Crss -- pF 5 0.4 1000 VDD=15V VGS=10V 7 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 100 td(off) 2 tf Switching Time, SW Time -- ns 2 1.0 7 5 Ta=75 °C 25°C --25°C 3 Drain Current, ID -- A 10 td(on) 7 5 tr 3 2 3 Ciss 2 100 7 5 Coss 3 Crss 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 0 7 10 IT02682 5 3 2 VDS=10V ID=3.5A 9 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC 6 IT02684 PD -- Tc 2.5 5 10 15 20 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V VGS=0 3 0.1 0.01 Allowable Power Dissipation, PD -- W IF -- VSD 10 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 10 10 7 5 3 2 ASO IDP=14A <10µs 10 0µ s ID=3.5A 1m s 10 1.0 7 5 ms DC op era Operation in this tio n area is limited by RDS(on). 3 2 0.1 7 5 3 2 IT02683 100ms Tc=25°C Single pulse 1unit Mounted on a ceramic board(2000mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 100 IT02685 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Tamperature, Tc -- °C 140 160 IT02686 No.6939-3/4 FW241 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2001. Specifications and information herein are subject to change without notice. PS No.6939-4/4