GB70NA60UF Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt® hyperfast rectifier • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC BENEFITS PRODUCT SUMMARY VCES 600 V IC DC 70 A at 88 °C VCE(on) typical at 70 A, 25 °C 2.4 V IF DC 70 A at 86 °C • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Higher switching frequency up to 150 kHz • Lower conduction losses and switching losses • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 111 TC = 80 °C 76 Pulsed collector current ICM 120 Clamped inductive load current ILM 120 Diode continuous forward current IF TC = 25 °C 113 TC = 80 °C 75 Peak diode forward current IFM 200 Gate to emitter voltage VGE ± 20 Power dissipation, IGBT PD Power dissipation, diode RMS isolation voltage Document Number: 93103 Revision: 22-Jul-10 PD VISOL TC = 25 °C 447 TC = 80 °C 250 TC = 25 °C 236 TC = 80 °C 132 Any terminal to case, t = 1 min 2500 A V W For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 GB70NA60UF Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR Diode forward voltage drop VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 1 mA 600 - - VGE = 15 V, IC = 35 A - 1.69 1.88 VGE = 15 V, IC = 70 A - 2.23 2.44 VGE = 15 V, IC = 35 A, TJ = 125 °C - 2.07 2.31 UNITS V VGE = 15 V, IC = 70 A, TJ = 125 °C - 2.89 3.21 VCE = VGE, IC = 500 μA 3 3.9 5 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -9 - mV/°C VGE = 0 V, VCE = 600 V - 1 100 μA VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.07 2.0 mA 600 - - V IC = 35 A, VGE = 0 V - 1.80 2.33 IC = 70 A, VGE = 0 V - 2.13 2.71 IC = 35 A, VGE = 0 V, TJ = 125 °C - 1.35 1.81 IC = 70 A, VGE = 0 V, TJ = 125 °C - 1.70 2.32 VR = VR rated - 0.1 50 μA TJ = 125 °C, VR = VR rated - 0.02 3 mA VGE = ± 20 V - - ± 200 nA UNITS IR = 1 mA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time tr Turn-off delay time TEST CONDITIONS IC = 50 A, VCC = 400 V, VGE = 15 V IC = 70 A, VCC = 360 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 25 °C IC = 70 A, VCC = 360 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery (see fig. 18) td(off) Fall time tf MIN. TYP. MAX. - 320 - - 42 - - 110 - - 1.15 - - 1.16 - - 2.31 - - 1.27 - - 1.28 - - 2.55 - - 208 - - 69 - - 208 - - 100 - nC mJ ns TJ = 150 °C, IC = 120 A, Rg = 22 Reverse bias safe operating area RBSOA Fullsquare VGE = 15 V to 0 V, VCC = 400 V, VP = 600 V Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr www.vishay.com 2 IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C - 59 93 - 4 6 A - 118 279 nC - 130 159 ns - 11 13 A - 715 995 nC For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] ns Document Number: 93103 Revision: 22-Jul-10 GB70NA60UF "High Side Chopper" IGBT SOT-227 Vishay Semiconductors (Warp 2 Speed IGBT), 70 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - - 0.28 - - 0.53 - 0.05 - Mounting torque, 6-32 or M3 screw - - 1.3 Nm Weight - 30 - g Maximum junction and storage temperature range IGBT Thermal resistance, junction to case RthJC Diode RthCS 160 200 140 175 120 150 100 125 IC (A) Allowable Case Temperature (°C) Thermal resistance, case to sink per module 80 75 40 50 20 25 0 TJ = 25 °C 100 60 °C/W TJ = 125 °C 0 0 20 40 60 80 100 120 0 1 2 3 4 5 IC - Continuous Collector Current (A) VCE (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Typical IGBT Collector Current Characteristics 1 1000 100 0.1 ICES (mA) TJ = 125 °C IC (A) 10 1 0.01 0.001 0.1 TJ = 25 °C 0.01 1 10 100 1000 0.0001 100 200 300 400 500 600 VCE (V) VCES (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current Document Number: 93103 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 GB70NA60UF Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A 4.5 200 175 TJ = 25 °C 4.0 125 3.5 IF (A) Vgeth (V) 150 3.0 100 TJ = 125 °C 75 TJ = 125 °C 50 TJ = 25 °C 2.5 25 0 2.0 0.0002 0.0004 0.0006 0.0008 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IC (mA) VFM (V) Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical Diode Forward Characteristics 4 1.50 1.25 100 A Energy (mJ) VCE (V) 3 70 A 2 1.00 0.75 0.50 Eoff 35 A 0.25 1 0.00 10 30 50 70 90 110 130 150 0 20 40 60 80 TJ (°C) IC (A) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V 1000 160 140 Switching Time (ns) Allowable Case Temperature (°C) Eon 120 100 80 60 40 td(off) td(on) tf 100 tr 20 0 10 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 IF - Continuous Forward Current (A) IC (A) Fig. 7 - Maximum DC Forward Current vs. Case Temperature Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93103 Revision: 22-Jul-10 GB70NA60UF "High Side Chopper" IGBT SOT-227 Vishay Semiconductors (Warp 2 Speed IGBT), 70 A 170 30 25 145 TJ = 125 °C 20 Irr (A) trr (ns) 120 95 70 TJ = 125 °C 15 10 TJ = 25 °C 5 45 20 100 TJ = 25 °C 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 11 - Typical trr Diode vs. dIF/dt VR = 200 V, IF = 50 A Fig. 12 - Typical Irr Diode vs. dIF/dt VRR = 200 V, IF = 50 A 1250 1050 TJ = 125 °C Qrr (nC) 850 650 450 TJ = 25 °C 250 50 100 1000 dIF/dt (A/µs) Fig. 13 - Typical Qrr Diode vs. dIF/dt VR = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.01 0.001 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 14 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Document Number: 93103 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 GB70NA60UF Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (DIODE) R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 16a - Clamped Inductive Load Test Circuit Fig. 16b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V D.U.T./ driver + VCC Rg Fig. 17a - Switching Loss Test Circuit www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93103 Revision: 22-Jul-10 GB70NA60UF "High Side Chopper" IGBT SOT-227 Vishay Semiconductors (Warp 2 Speed IGBT), 70 A 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 17b - Switching Loss Waveforms Test Circuit ORDERING INFORMATION TABLE Device code Document Number: 93103 Revision: 22-Jul-10 G B 70 N A 60 U F 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - B = IGBT Generation 5 3 - Current rating (70 = 70 A) 4 - Circuit configuration (N = High Side Chopper) 5 - Package indicator (A = SOT-227) 6 - Voltage rating (60 = 600 V) 7 - Speed/type (U = Ultrafast IGBT) 8 - F = F/W FRED Pt® diode For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 GB70NA60UF Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A CIRCUIT CONFIGURATION 3 2 1 4 LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95036 Packaging information http://www.vishay.com/doc?95037 www.vishay.com 8 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93103 Revision: 22-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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