VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT INT-A-PAK, (Trench PT IGBT), 100 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Trench PT IGBT technology • • • • • • INT-A-PAK BENEFITS • Optimized for high current inverter stages (AC TIG welding machines) • Direct mounting to heatsink • Very low junction to case thermal resistance • Low EMI PRODUCT SUMMARY VCES IC DC, TC = 130 °C VCE(on) at 100 A, 25 °C Speed Package Circuit FRED Pt® anti-parallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL pending Designed for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 600 V 100 A 1.16 V DC to 1 kHz INT-A-PAK Half bridge ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL VCES Continuous collector current IC Pulsed collector current Peak switching current Gate to emitter voltage RMS isolation voltage ICM ILM VGE VISOL Maximum power dissipation PD Operating junction temperature range Storage temperature range TJ TStg TEST CONDITIONS TC = 25 °C TC = 80 °C Any terminal to case, t = 1 min TC = 25 °C TC = 100 °C MAX. 600 337 235 440 440 ± 20 2500 781 312 -40 to +150 -40 to +125 UNITS V A V W °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Forward transconductance Transfer characteristics SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ gfe VGE Collector to emitter leakage current ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES TEST CONDITIONS VGE = 0 V, IC = 500 μA VGE = 15 V, IC = 100 A VGE = 15 V, IC = 200 A VGE = 15 V, IC = 100 A, TJ = 125 °C VCE = VGE, IC = 3.2 mA VCE = VGE, IC = 3.2 mA, (25 °C to 125 °C) VCE = 20 V, IC = 50 A VCE = 20 V, IC = 100 A VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 125 °C IC = 100 A, VGE = 0 V IC = 100 A, VGE = 0 V, TJ = 125 °C VGE = ± 20 V MIN. 600 4.9 - TYP. 1.16 1.37 1.08 5.8 -27 93 10.2 1.0 300 1.36 1.17 - MAX. 1.34 8.8 150 1.96 ± 500 UNITS V mV/°C S V μA V nA Revision: 11-Jun-15 Document Number: 95721 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge Qg Gate to emitter charge Qge Gate to collector charge Qgc TEST CONDITIONS IC = 100 A, VCC = 400 V MIN. TYP. MAX. - 942 - - 295 - - 802 - Turn-on switching energy Eon - 1.0 - Turn-off switching energy Eoff - 7.9 - - 8.9 - - 242 - Total switching energy Ets Turn-on delay time td(on) Rise time - 66 - td(off) - 453 - tf - 460 - tr Turn-off delay time Fall time IC = 100 A, VCC = 300 V, VGE = 15 V, L = 500 μH Rg = 3.3 , TJ = 25 °C Turn-on switching energy Eon - 2.0 - Turn-off switching energy Eoff - 15.3 - - 17.3 - - 257 - - 68 - - 716 - - 868 - Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time IC = 100 A, VCC = 300 V, VGE = 15 V, L = 500 μH Rg = 3.3 , TJ = 125 °C td(off) Fall time tf Reverse bias safe operating area RBSOA Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr TJ = 150°C, IC = 440 A, VCC = 300 V, Vp = 600 V, Rg = 3.3 , VGE = 15 V to 0 V, L = 500 μH IF = 50 A, dIF/dt = 200 A/μs, Vrr = 200 V, TJ = 125 °C nC mJ ns mJ ns Fullsquare - IF = 50 A, dIF/dt = 200 A/μs, Vrr = 200 V UNITS 115 - ns - 11 - A - 638 - nC - 210 - ns - 21.4 - A - 2251 - nC THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction temperature range Storage temperature range Junction to case per switch per diode Weight MIN. TYP. MAX. TJ -40 - 150 TStg -40 - 125 RthJC - - 0.16 - - 0.48 - 0.1 - case to heatsink - - 4 case to terminal 1, 2, 3 - - 3 - 185 - Case to sink per module Mounting torque SYMBOL RthCS UNITS °C °C/W Nm g Revision: 11-Jun-15 Document Number: 95721 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP100TS60SFPbF Vishay Semiconductors 160 200 140 180 VGE = 12 V VGE = 15 V VGE = 18 V 160 120 140 100 120 DC IC (A) Allowable Case Temperature (°C) www.vishay.com 80 60 VGE = 9 V 100 80 60 40 40 20 20 0 0 0 50 100 150 200 250 300 350 400 0 0.2 0.4 0.6 IC - Continuous Collector Current (A) 0.8 1.0 1.2 1.4 1.6 1.8 VCE (V) Fig. 1 - Maximum IGBT Continuous Collector Current vs. Case Temperature Fig. 4 - Typical IGBT Output Characteristics, TJ = 125 °C 1.6 1000 1.5 200 A 1.4 100 VCE (V) IC (A) 1.3 10 1.2 100 A 1.1 1.0 1 50 A 0.9 0.8 0.1 0.7 1 10 100 1000 20 40 60 80 100 120 140 160 TJ (°C) VCE (V) Fig. 2 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V Fig. 5 - Collector to Emitter Voltage vs. Junction Temperature 100 300 VCE = 20 V 250 80 200 TJ = 125 °C IC (A) IC (A) 60 150 40 100 50 TJ = 25 °C TJ = 25 °C TJ = 150 °C 20 TJ = 125 °C 0 0 0.3 0.6 0.9 1.2 1.5 0 1.8 2.1 VCE (V) Fig. 3 - Typical IGBT Output Characteristics, VGE = 15 V 3 4 5 6 7 8 9 10 11 12 VGE (V) Fig. 6 - Typical IGBT Transfer Characteristics Revision: 11-Jun-15 Document Number: 95721 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors 160 18.0 16.0 Allowable Case Temperature (°C) VCC = 400 V IC = 100 A 14.0 VGE (V) 12.0 10.0 8.0 6.0 4.0 2.0 0 0 200 400 600 800 1000 140 120 100 DC 80 60 40 20 0 0 1200 40 60 80 100 Fig. 7 - Typical Total Gate Charge vs. Gate to Emitter Voltage 140 160 Fig. 10 - Maximum Diode Continuous Forward Current vs. Case Temperature 200 7.5 180 6.5 160 TJ = 25 °C 5.5 TJ = 150 °C 140 120 3.5 IF (A) 4.5 TJ = 125 °C TJ = 125 °C 100 80 60 2.5 TJ = 25 °C 40 1.5 20 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IC (mA) VFM (V) Fig. 8 - Typical IGBT Gate Threshold Voltage Fig. 11 - Typical Diode Forward Characteristics 25 10 TJ = 150 °C 1 20 0.1 TJ = 125 °C Energy (mJ) ICES (mA) 120 IF - Continuous Forward Current (A) Qg (nC) VGEth (V) 20 0.01 0.001 15 Eoff 10 TJ = 25 °C 5 0.0001 Eon 0 0.00001 100 200 300 400 500 600 VCES (V) Fig. 9 - Typical IGBT Zero Gate Voltage Collector Current 0 20 40 60 80 100 120 140 160 IC (A) Fig. 12 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 300 V, Rg = 3.3 , VGE = 15 V, L = 500 μH Revision: 11-Jun-15 Document Number: 95721 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors 10000 280 260 1000 220 TJ = 125 °C 200 trr (ns) Switching Time (ns) 240 tf td(off) td(on) 180 160 140 100 120 tr TJ = 25 °C 100 80 60 10 0 20 40 60 80 100 120 140 160 100 300 400 500 IC (A) dIF/dt (A/μs) Fig. 13 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 300 V, Rg = 3.3 , VGE = 15 V, L = 500 μH Fig. 16 - Typical Diode Reverse Recovery Time vs. dIF/dt Vrr = 200 V, IF = 50 A 20 40 18 35 Eoff 16 30 14 TJ = 125 °C 12 Irr (A) Energy (mJ) 200 10 8 25 20 TJ = 25 °C 6 15 Eon 4 10 2 0 5 0 5 10 15 20 25 30 100 200 300 400 500 Rg (Ω) dIF/dt (A/μs) Fig. 14 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 300 V, IC = 100 A, VGE = 15 V, L = 500 μH Fig. 17 - Typical Diode Reverse Recovery Current vs. dIF/dt Vrr = 200 V, IF = 50 A 10 000 3300 3000 TJ = 125 °C 2400 tf 1000 Qrr (nC) Switching Time (ns) 2700 td(off) td(on) 100 2100 1800 1500 1200 tr TJ = 25 °C 900 600 10 300 0 5 10 15 20 25 30 Rg (Ω) Fig. 15 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 300 V, IC = 100 A, VGE = 15 V, L = 500 μH 100 200 300 400 500 dIF/dt (A/μs) Fig. 18 - Typical Diode Reverse Recovery Charge vs. dIF/dt) Vrr = 200 V, IF = 50 A Revision: 11-Jun-15 Document Number: 95721 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 20 - Maximum Thermal Impedance ZthJC Characteristics - (Diode)) ORDERING INFORMATION TABLE Device code VS- GP 100 T S 60 S F PbF 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - IGBT die technology (GP = Trench PT) 3 4 - Current rating (100 = 100 A) 5 - Circuit configuration (T = Half bridge) Package indicator (S = INT-A-PAK) 6 - Voltage code (60 = 600 V) 7 - Speed/type (S = standard speed IGBT) 8 - Diode type 9 - None = Standard production; PbF = Lead (Pb)-free Revision: 11-Jun-15 Document Number: 95721 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION 3 6 7 1 4 5 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95173 Revision: 11-Jun-15 Document Number: 95721 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK IGBT Ø 6.5 (Ø 0.25) 80 (3.15) 23 (0.91) 14.3 (0.56) 23 (0.91) 5 (0.20) 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 2 3 5 1 66 (2.60) 3 screws M6 x 10 4 35 (1.38) 7 6 17 (0.67) 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) 37 (1.44) 94 (3.70) Revision: 27-Mar-13 Document Number: 95173 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000