RENESAS HAT1047R

HAT1047R, HAT1047RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G0074-0500Z
(Previous ADE-208-1545D(Z))
Rev.5.00
Aug.27.2003
Features
•
•
•
•
For Automotive Application (at Type Code "J")
Low on-resistance
Capable of –4.5 V gate drive
High density mounting
Outline
SOP-8
8
5 6 7 8
D D D D
5
7 6
3
1 2
4
4
G
S S S
1 2 3
Rev.5.00, Aug.27.2003, page 1 of 9
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
HAT1047R, HAT1047RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–14
A
Drain peak current
ID(pulse)Note1
–112
A
Body-drain diode reverse drain current
IDR
–14
A
—
—
–14
A
—
—
19.6
mJ
2.5
W
Avalanche current
HAT1047R
Avalanche energy
HAT1047R
IAP
Note3
HAT1047RJ
EAR
Note3
Channel dissipation
Pch
Note2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
HAT1047RJ
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.5.00, Aug.27.2003, page 2 of 9
HAT1047R, HAT1047RJ
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
–30
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
—
—
mV
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ± 16V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
±1
µA
VDS = –30 V, VGS = 0
Zero gate voltage
HAT1047R
IDSS
—
—
—
µA
VDS = –24 V, VGS = 0
drain current
HAT1047RJ
IDSS
—
—
–20
µA
Ta = 125°C
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.5
V
VDS = –10 V, ID = –1 mA
Static drain to source on state
RDS(on)
—
10
12
mΩ
ID = –7 A, VGS = –10 V Note4
resistance
RDS(on)
—
19
25
mΩ
ID = –7 A, VGS = –4.5 V Note4
Forward transfer admittance
|yfs|
9.6
16
—
S
ID = –7 A, VDS = –10 V Note4
Input capacitance
Ciss
—
3500
—
pF
VDS = –10 V
Output capacitance
Coss
—
750
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
520
—
pF
f = 1 MHz
Total gate charge
Qg
—
64
—
nc
VDD = –10 V
Gate to source charge
Qgs
—
10
—
nc
VGS = –10 V
Gate to drain charge
Qgd
—
12
—
nc
ID = –14 A
Turn-on delay time
td(on)
—
23
—
ns
VGS = –10 V, ID = –7A
Rise time
tr
—
45
—
ns
VDD ≅ –10 V
Turn-off delay time
td(off)
—
80
—
ns
RL = 1.43 Ω
Fall time
tf
—
25
—
ns
RL = 4.7 Ω
Body–drain diode forward voltage
VDF
—
–0.82
–1.07
V
IF = –14 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
trr
—
45
—
ns
IF = –14 A, VGS = 0
diF/ dt = 100 A/µs
Notes: 4. Pulse test
Rev.5.00, Aug.27.2003, page 3 of 9
HAT1047R, HAT1047RJ
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
2.0
1.0
10 µs
-100
I D (A)
3.0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
-500
10
-10
DC
PW
Op
era
Drain Current
Channel Dissipation
Pch (W)
4.0
0µ
s
1m
s
=1
0m
tio
s
n(
-1 Operation in
this area is
limited by R DS(on)
-0.1
PW
N
≤ 1 ote 1
0s
)
Ta = 25°C
1 shot Pulse
0
50
100
150
200
Ambient Temperature Ta (°C)
-0.01
-0.1 -0.3
-1
-3
-10 -30 -100
Drain to Source Voltage V DS (V)
Note 1:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
Typical Transfer Characteristics
-50
-50
-10 V
Pulse Test
(A)
-40
-4 V
ID
I D (A)
-8 V
Drain Current
Drain Current
-30
-20
-3 V
-10
-40
V DS = -10 V
Pulse Test
-30
-20
75°C
-10
25°C
Tc = -25°C
VGS = -2 V
0
-2
-4
-6
Drain to Source Voltage
Rev.5.00, Aug.27.2003, page 4 of 9
-8
-10
V DS (V)
0
-1
-2
-3
Gate to Source Voltage
-4
VGS (V)
-5
HAT1047R, HAT1047RJ
I D = -10 A
Pulse Test
-160
-120
-5 A
-80
-2 A
-40
-12
-4
-8
Gate to Source Voltage
Static Drain to Source on State Resistance
R DS(on) (mΩ )
0
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
-10 A
32
24
V GS = -4.5 V
I D = -2,-5 A
16
8
0
-40
-2, -5, -10 A
-10 V
0
40
80
120
160
Case Temperature Tc (°C)
Rev.5.00, Aug.27.2003, page 5 of 9
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
-4.5 V
10
VGS = -10 V
5
2
1.0
-1
-16
-20
V GS (V)
-2
-5 -10 -20
-50 -100 -200
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
V DS(on) (mV)
-200
Drain to Source On State Resistance
R DS(on) (m Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
200
V DS = -10 V
Pulse Test
100
Tc = –25°C
50
20
10
25°C
5
75°C
2
1.0
0.5
0.1
1.0
10
Drain Current I D (A)
100
HAT1047R, HAT1047RJ
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
30000
VGS = 0
f = 1 MHz
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
-1
10000
Ciss
1000
Coss
Crss
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
100
0
-2
-5 -10 -20
-50 -100
Reverse Drain Current I DR (A)
-40
-50
0
V DS
VDD = - 5 V
-10 V
-25 V
I D = -14 A
16
32
48
64
Gate Charge Qg (nc)
Rev.5.00, Aug.27.2003, page 6 of 9
-8
V GS
-12
-16
-20
80
-30
-40
-50
V GS (V)
Switching Characteristics
500
Switching Time t (ns)
-30
-4
1000
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
V DD = - 5 V
-10 V
-25 V
-10
-20
0
-20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
-10
V GS = -10 V, VDD = -10 V
PW = 5 µs, duty < 1 %
200
t d(off)
100
50
tr
tf
20
t d(on)
10
-0.1 -0.2
-0.5
-1
-2
Drain Current
-5
I D (A)
-10 -20
HAT1047R, HAT1047RJ
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
(A)
-50
Reverse Drain Current I F
-40
-10 V
-5V
-30
V GS = 0, 5 V
-20
-10
Pulse Test
0
-0.4
-0.8
-1.2
Source to Drain Voltage
-1.6
-2.0
20
I AP = -14 A
V DD = -15 V
duty < 0.1 %
Rg > 50 Ω
16
12
8
4
0
25
V SDF (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
V DS
Monitor
1
2
2
L • I AP •
IAP
Monitor
VDSS
VDSS - VDD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
-15 V
50Ω
0
Rev.5.00, Aug.27.2003, page 7 of 9
VDD
HAT1047R, HAT1047RJ
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.2
0.1
0.05
0.01
θ ch - f(t) = γ s (t) x θ ch - f
θ ch - f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
0.02
0.01
lse
0.001
PDM
u
tp
D=
ho
1s
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Rg
1000
1000
Switching Time Waveform
Vout
Monitor
Vin Monitor
100
Vin
10%
D.U.T.
RL
90%
Vin
-10 V
V DD
= -10 V
Vout
td(on)
Rev.5.00, Aug.27.2003, page 8 of 9
90%
90%
10%
10%
tr
td(off)
tf
HAT1047R, HAT1047RJ
Package Dimensions
As of January, 2003
Unit: mm
3.95
4.90
5.3 Max
5
8
*0.22 ± 0.03
0.20 ± 0.03
4
1.75 Max
1
0.75 Max
+ 0.10
6.10 – 0.30
1.08
0.14 – 0.04
*0.42 ± 0.08
0.40 ± 0.06
+ 0.11
0˚ – 8˚
1.27
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Rev.5.00, Aug.27.2003, page 9 of 9
Package Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
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