HAT2077R Silicon N Channel MOS FET High Speed Power Switching ADE-208-1228 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High density mounting Outline SOP–8 8 5 6 7 8 D D D D 5 7 6 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2077R Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±30 V Drain current ID 3 A 24 A 3 A 2.5 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 200 — — V I D = 10mA, VGS = 0 Gate to source leak current I GSS — — ±0.1 µA VGS = ±30V, VDS = 0 Zero gate voltege drain current I DSS — — 1 µA VDS = 200 V, VGS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V I D = 1mA, VDS = 10V Static drain to source on state resistance RDS(on) — 0.18 0.235 Ω I D = 1.5A, VGS = 10VNote3 Forward transfer admittance |yfs| 2.3 3.8 — S I D = 1.5A, VDS = 10V Note3 Input capacitance Ciss — 830 — pF VDS = 25V Output capacitance Coss — 115 — pF VGS = 0 Reverse transfer capacitance Crss — 23 — pF f = 1MHz Turn-on delay time t d(on) — 23 — ns VDD ≅ 100V, I D = 1.5A Rise time tr — 10 — ns VGS = 10V Turn-off delay time t d(off) — 70 — ns RL = 66.7Ω Fall time tf — 10 — ns Rg = 10Ω Total gate charge Qg — 23 — nC VDD = 160V Gate to source charge Qgs — 3.5 — nC VGS = 10V Gate to drain charge Qgd — 10 — nC I D = 3A Body–drain diode forward voltage VDF — 0.75 1.15 V I F = 3A, VGS = 0 Note3 Body–drain diode reverse recovery time t rr — 75 — ns I F = 3A, VGS = 0 diF/ dt =100A/µs Note: 2 3. Pulse test HAT2077R Main Characteristics Power vs. Temperature Derating 100 Maximum Safe Operation Area 10 µs (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW ≤ 10s 10 PW ID 3 Drain Current Channel Dissipation Pch (W) 4 2 1 0 50 100 150 Ambient Temperature 200 1 DC 10 = 1 10 s pe (1 sh ra tio n 0.1 µs m s O 0 m ot ) (P W Operation in < Not 10 e 4 this area is s) limited by R DS(on) 0.01 Ta = 25 °C 0.001 1 shot Pulse 0.1 1 10 100 Drain to Source Voltage Ta (°C) 1000 VDS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 20 Pulse Test (A) 16 ID 8V V DS = 10 V Pulse Test 12 6V 12 8 5.5 V 4 5V Drain Current Drain Current ID (A) 10 V 16 Typical Transfer Characteristics 20 8 Tc = 75°C 25°C 4 –25°C VGS = 4.5V 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) 0 2 4 6 Gate to Source Voltage 8 10 VGS (V) 3 HAT2077R 0.8 0.6 I D = 3A 0.4 2A 0.2 1A Static Drain to Source on State Resistance RDS(on) (Ω) 0 4 Pulse Test 12 4 8 Gate to Source Voltage 1A 2A 0.2 0.1 0 –40 0 40 80 Case Temperature 120 160 Tc (°C) Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test VGS = 10 V, 15 V 0.2 0.1 0.05 0.02 0.01 0.1 0.2 16 20 VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test ID=3A V GS = 10 V 0.4 0.3 Drain to Source On State Resistance RDS(on) (Ω) 1.0 5 10 20 0.5 1 2 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 20 10 5 Tc = –25 °C 25 °C 2 1 75 °C 0.5 V DS = 10 V Pulse Test 0.2 0.1 0.1 0.2 0.5 1 2 Drain Current 5 ID 10 20 (A) 50 HAT2077R 1000 5000 VGS = 0 f = 1 MHz 2000 500 Capacitance C (pF) Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage Body–Drain Diode Reverse Recovery Time 200 100 50 Ciss 1000 500 200 Coss 100 50 Crss 20 20 10 0.1 di / dt = 100 A / µs V GS = 0, Ta = 25 °C 10 5 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 20 VGS 12 200 VDS 8 100 4 0 V DD = 160 V 100 V 50 V 8 16 24 32 Gate Charge Qg (nC) 0 40 VGS (V) 16 80 100 (V) V GS = 10 V, V DD = 100 V PW = 5 µs, duty < 1 % R G =10 ¶ 200 Switching Time t (ns) 300 V DD = 160 V 100 V 50 V Gate to Source Voltage VDS (V) Drain to Source Voltage 400 500 20 I D= 3 A 60 Switching Characteristics Dynamic Input Characteristics 500 40 Drain to Source Voltage VDS 100 t d(off) 50 20 t d(on) 10 5 tr tf 2 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 5 HAT2077R Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Souece to Drain Voltage 20 Gate to Source Cutoff Voltage VGS(off) (V) (A) Reverse Drain Current IDR 16 12 V GS = 0 V 8 10 V 4 5V 0 5 Pulse Test 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) V DS = 10 V I D = 10mA 4 1mA 3 0.1mA 2 1 0 -40 Switching Time Test Circuit 0 40 80 Case Temperature 120 160 Tc (°C) Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 100 V Vout 10% 10% 90% td(on) 6 tr 10% 90% td(off) tf HAT2077R Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 83.3 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.02 0.01 0.001 0.0001 10 µ PDM lse ot D= pu PW T PW h 1s T 100 µ 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (s) 7 HAT2077R Package Dimensions As of January, 2001 Unit: mm 3.95 4.90 5.3 Max 5 8 *0.22 ± 0.03 0.20 ± 0.03 4 1.75 Max 1 0.75 Max + 0.10 6.10 – 0.30 1.08 0.14 – 0.04 *0.42 ± 0.08 0.40 ± 0.06 + 0.11 0° – 8° 1.27 + 0.67 0.60 – 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension 8 Hitachi Code JEDEC EIAJ Mass (reference value) FP-8DA Conforms — 0.085 g HAT2077R Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 9