ETC H5N5001FM

H5N5001FM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1380 (Z)
1st. Edition
Mar. 2001
Features
•
•
•
•
•
Low on-resistance
Low leakage current
High speed switching
Low gate charge
Avalanche ratings
: RDS(on) =1.1Ω typ.
: I DSS =1µA max (at VDS = 500 V)
: tf = 15ns typ (at VGS = 10 V, V DD = 250 V, I D = 2.5 A)
: Qg = 15nC typ (at VDD = 400 V, V GS = 10 V, I D = 5 A)
Outline
TO–220FM
D
1. Gate
2. Drain
3. Source
G
1 2
S
3
H5N5001FM
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
5
A
20
A
5
A
20
A
5
A
30
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Body-drain diode reverse drain peak
current
I DR(pulse)
Avalanche current
I AP Note3
Note1
Note2
Channel dissipation
Pch
Channel to case Thermal Impedance
θch-c
4.17
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Tch ≤150°C
H5N5001FM
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
500
—
—
V
I D = 10mA, VGS = 0
Gate to source leak current
I GSS
—
—
±0.1
µA
VGS = ±30V, VDS = 0
Zero gate voltege drain current I DSS
—
—
1
µA
VDS = 500 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
3.0
—
4.0
V
I D = 1mA, VDS = 10V
Static drain to source on state
resistance
RDS(on)
—
1.1
1.5
Ω
I D = 2.5A, VGS = 10VNote4
Forward transfer admittance
|yfs|
3.0
4.5
—
S
I D = 2.5A, VDS = 10V Note4
Input capacitance
Ciss
—
580
—
pF
VDS = 25V
Output capacitance
Coss
—
70
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
13
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
20
—
ns
I D = 2.5A
Rise time
tr
—
15
—
ns
VGS = 10V
Turn-off delay time
t d(off)
—
65
—
ns
RL = 100Ω
Fall time
tf
—
15
—
ns
Rg = 10Ω
Total gate charge
Qg
—
15
—
nC
VDD = 400V
Gate to source charge
Qgs
—
3
—
nC
VGS = 10V
Gate to drain charge
Qgd
—
8
—
nC
I D = 5A
Body–drain diode forward
voltage
VDF
—
0.85
1.3
V
I F = 5A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
400
—
ns
I F = 5A, VGS = 0
diF/ dt =100A/µs
Body–drain diode reverse
recovery charge
Qrr
—
1.5
—
µC
Note:
4. Pulse test
3
H5N5001FM
Main Characteristics
Power vs. Temperature Derating
I D (A)
30
20
10
10
30
10
PW
3
DC
1
100
Case Temperature
150
6
(A)
8
4
10
20
30
Drain to Source Voltage
40
50
V DS (V)
ho
t)
25
°C
)
30
3
10
100 300 1000
Drain to Source Voltage V DS (V)
V DS = 10 V
Pulse Test
6
4
2
Tc = 75°C
25°C
–25°C
VGS = 4V
0
c=
Typical Transfer Characteristics
5.5 V
4.5 V
1s
10
5V
2
s(
Ta = 25 °C
Tc (°C)
4
ion
Operation in
this area is
limited by R DS(on)
1
ID
6V
m
at
0.1
200
Drain Current
I D (A)
Drain Current
Pulse Test
8V
8 10 V
10
s
0.3
Typical Output Characteristics
10
=
µs
s
1m
(T
0.01
50
Op
er
0.03
0
0µ
10
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
100
40
0
2
4
6
Gate to Source Voltage
8
10
V GS (V)
H5N5001FM
Pulse Test
16
12
8
4
Static Drain to Source on State Resistance
R DS(on) ( Ω)
6
2
4
Gate to Source Voltage
8
V GS (V)
V GS = 10 V
3
ID=5A
2
2A
1
0
–40
1
0.1
0.1 0.2
10
Static Drain to Source on State Resistance
vs. Temperature
5
Pulse Test
4
VGS = 10 V, 15 V
2
0.2
2A
1A
0
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
0.5
ID=5A
1A
0
40
80
120
160
Case Temperature Tc (°C)
5 10 20
0.5 1 2
Drain Current I D (A)
50
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
20
Drain to Source On State Resistance
R DS(on) (Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
20
10
Tc = –25 °C
5
2
1
25 °C
75 °C
0.5
0.2
0.1
0.1 0.2
V DS = 10 V
Pulse Test
2
0.5 1
5 10 20
Drain Current I D (A)
50
5
H5N5001FM
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
5000
Capacitance C (pF)
500
200
100
50
200
100
50
Coss
10
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
V DD = 100 V
250 V
400 V
600
200
0
VDS
16
12
8
V DD = 400 V
250 V
100 V
10
20
30
40
Gate Charge Qg (nC)
4
0
50
100
150
200
250
Switching Characteristics
1000
V GS (V)
VGS
50
Drain to Source Voltage V DS (V)
20
I D= 5 A
800
400
Crss
5
Gate to Source Voltage
V DS (V)
Ciss
500
di / dt = 100 A / µs
V GS = 0, Ta = 25 °C
Dynamic Input Characteristics
1000
Drain to Source Voltage
1000
20
20
10
0.1
6
VGS = 0
f = 1 MHz
2000
500
Switching Time t (ns)
Reverse Recovery Time trr (ns)
1000
V GS = 10 V, V DD = 250 V
PW = 10 µs, duty < 1 %
R G =10 ¶
200
100
t d(off)
50
20
10
0.1
tf
t d(on)
tr
0.3
1
3
10
30
Drain Current I D (A)
100
H5N5001FM
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current I DR (A)
10
8
5, 10 V
6
V GS = 0 V
4
2
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V DS = 10 V
4
I D = 10mA
1mA
3
0.1mA
2
1
0
-50
V SD (V)
0
50
100
Case Temperature
Switching Time Test Circuit
150
Tc (°C)
Waveform
Vout
Monitor
Vin Monitor
200
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 250 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
H5N5001FM
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
1
0.0
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17 °C/W, Tc = 25 °C
tp
ul
se
0.01
ho
Normalized Transient Thermal Impedance
γ s (t)
1
1s
PDM
D=
0.003
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m
Pulse Width
8
PW (S)
100 m
1
10
H5N5001FM
Package Dimensions
10.0 ± 0.3
7.0 ± 0.3
As of January, 2001
2.5 ± 0.2
Unit: mm
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
4.45 ± 0.3
2.5
14.0 ± 1.0
5.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
12.0 ± 0.3
17.0 ± 0.3
0.6
φ 3.2 ± 0.2
2.8 ± 0.2
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-220FM
—
Conforms
1.8 g
9
H5N5001FM
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Colophon 2.0
10