HITACHI 2SK3233

2SK3233
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1369 (Z)
1st. Edition
Mar. 2001
Features
•
•
•
•
•
Low on-resistance: R DS(on) = 1.1 Ω typ.
Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
Avalanche ratings
Outline
TO–220CFM
D
G
1 2
S
3
1. Gate
2. Drain
3. Source
2SK3233
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
5
A
20
A
5
A
20
A
5
A
30
W
Note1
Drain peak current
ID
Body-drain diode reverse drain
current
I DR
Body-drain diode reverse drain peak
current
I DR
Avalanche current
I AP
(pulse)
Note1
(pulse)
Note3
Note2
Channel dissipation
Pch
Channel to case Tehrmal Impedance
θ ch-c
4.17
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
2
2SK3233
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
500
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
±0.1
µA
VGS = ±30 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
1
µA
VDS = 500 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
3.0
—
4.0
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance
RDS(on)
—
1.1
1.5
Ω
I D = 2.5 A, VGS = 10 V Note4
Forward transfer admittance
|yfs|
3.0
4.5
—
S
I D = 2.5 A, VDS = 10 V Note4
Input capacitance
Ciss
—
580
—
pF
VDS = 25 V
Output capacitance
Coss
—
70
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
13
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
20
—
ns
I D = 2.5 A
Rise time
tr
—
15
—
ns
VGS = 10 V
Turn-off delay time
td(off)
—
65
—
ns
RL = 100 Ω
Fall time
tf
—
15
—
ns
Rg = 10 Ω
Total gate charge
Qg
—
15
—
nC
VDD = 400 V
Gate to source charge
Qgs
—
3
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
8
—
nC
ID = 5 A
Body-drain diode forward
voltage
VDF
—
0.85
1.3
V
I F = 5 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
400
—
ns
I F = 5 A, VGS = 0
Body-drain diode reverse
recovery charge
Qrr
—
1.5
—
µC
diF/dt = 100 A/µs
Note:
4. Pulse test
3
2SK3233
Main Characteristics
Power vs. Temperature Derating
10
ID (A)
30
30
20
10
10
PW
3
DC
1
100
Case Temperature
150
Operation in
0.1 this area is
200
Tc (°C)
6V
ID (A)
8
4.5 V
4
10
20
30
Drain to Source Voltage
40
50
VDS (V)
c=
ho
t)
25
°C
)
30
3
10
100 300 1000
Drain to Source Voltage VDS (V)
Pulse Test
6
4
2
Tc = 75°C
25°C
–25°C
VGS = 4V
0
1s
(T
V DS = 10 V
5V
2
s(
Typical Transfer Characteristics
5.5 V
4
m
10
8V
10 V
6
ion
s
s
Ta = 25°C
1
Drain Current
ID (A)
Drain Current
8
Pulse Test
10
µs
limited by RDS(on)
Typical Output Characteristics
10
=
1m
at
0.3
0.01
50
Op
er
0.03
0
0µ
10
Drain Current
Channel Dissipation Pch (W)
Maximum Safe Operation Area
100
40
0
2
4
6
Gate to Source Voltage
8
10
VGS (V)
2SK3233
Pulse Test
16
12
8
4
Static Drain to Source on State Resistance
RDS(on) (Ω)
0
8
3
V GS = 10 V
ID=5A
2A
0
–40
1
VGS (V)
2
1
VGS = 10 V, 15 V
0.1
0.1 0.2
10
Static Drain to Source on State Resistance
vs. Temperature
5
Pulse Test
4
2
0.2
2A
1A
6
2
4
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
0.5
ID=5A
1A
0
40
80
120
Case Temperature Tc (°C)
160
0.5 1 2
Drain Current
5 10 20
ID (A)
50
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
20
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
20
10
Tc = –25°C
5
2
1
25°C
75°C
0.5
V DS = 10 V
Pulse Test
0.2
0.1
0.1 0.2
0.5 1
2
Drain Current
5
10 20
50
ID (A)
5
2SK3233
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
500
2000
Capacitance C (pF)
5000
Reverse Recovery Time trr (ns)
1000
200
100
50
10
0.1
Coss
Crss
VGS
16
V DD = 100 V
250 V
400 V
VDS
12
8
4
V DD = 400 V
250 V
100 V
10
20
30
40
Qg (nC)
0
50
100
150
500
200
250
VDS (V)
Switching Characteristics
1000
Switching Time t (ns)
I D= 5 A
50
Drain to Source Voltage
VGS (V)
20
Gate Charge
6
50
0
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
0
100
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
600
200
200
5
800
400
Ciss
500
10
Dynamic Input Characteristics
1000
1000
20
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
20
VGS = 0
f = 1 MHz
V GS = 10 V, V DD = 250 V
PW = 10 µs, duty < 1 %
R G =10 Ω
200
100
t d(off)
50
20
10
0.1
tf
t d(on)
tr
0.3
1
3
Drain Current
10
30
ID (A)
100
2SK3233
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current
IDR (A)
10
8
5, 10 V
6
V GS = 0 V
4
2
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V DS = 10 V
4
I D = 10mA
1mA
3
0.1mA
2
1
0
-50
VSD (V)
0
50
100
150
Case Temperature Tc (°C)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
200
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 250 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
2SK3233
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
1
0.0
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17°C/W, Tc = 25°C
ho
tp
ul
se
0.01
PDM
1s
Normalized Transient Thermal Impedance γ s (t)
1
D=
0.003
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m
Pulse Width
8
100 m
PW (s)
1
10
2SK3233
Package Dimensions
As of January, 2001
Unit: mm
2.54
2.54
15.0 ± 0.3
4.5 ± 0.3
2.7 ± 0.2
2.5 ± 0.2
13.60 ± 1.0
0.6 ± 0.1
4.1 ± 0.3
1.0 ± 0.2
1.15 ± 0.2
φ 3.2 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
0.7 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-220CFM
—
—
1.9 g
9
2SK3233
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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Colophon 2.0
10