HAT2088R Silicon N Channel MOSFET High Speed Power Switching ADE-208-1234 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance • Low leakage current • High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4 G 5 7 6 3 1 2 4 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2088R Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±30 V Drain current ID 2 A 16 A 2 A 2.5 W Drain peak current I D (pulse) Body-drain diode reverse drain current I DR Note1 Note 2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs and duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 ×1.6 mm), PW ≤ 10 s 2 HAT2088R Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 200 — — V I D = 10 mA, VGS = 0 Gate to source leak current I GSS — — ±0.1 µA VGS = ±30V, VDS = 0 Zero gate voltage drain current I DSS — — 1 µA VDS = 200V, VGS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10V, ID = 1 mA Static drain to source on state resistance RDS(on) — 0.35 0.44 Ω I D = 1A, VGS = 10V Note3 Forward transfer admittance |yfs| 1.5 2.5 — S I D = 1A, VDS = 10V Input capacitance Ciss — 450 — pF VDS = 25V, VGS = 0 Output capacitance Coss — 65 — pF f = 1 MHz Reverse transfer capacitance Crss — 13 — pF Total gate charge Qg — 13 — nC VDD = 160 V Gate to source charge Qgs — 2 — nC VGS = 10 V Gate to drain charge Qgd — 6 — nC ID = 2 A Turn-on delay time td(on) — 19 — ns VGS = 10V, ID = 1A Rise time tr — 8.5 — ns VDD ≅ 100V Turn-off delay time td(off) — 48 — ns R L= 100Ω Fall time tf — 11 — ns Rg = 10Ω Body-drain diode forward voltage VDF — 0.8 1.2 V I F = 2A, VGS = 0 Note 3 Body-drain diode reverse recovery time trr — 65 — ns I F = 2A, VGS = 0 diF/dt = 100A/µs Note: Note3 3. Pulse test 3 HAT2088R Main Characteristics Power vs. Temparature Derating 2 1 0 50 100 Ambient Temparature 150 10 µs I D (A) Test Condition: When using the glass epoxy board 3 (FR4 40x40x1.6mm), PW ≤ 10 s Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 100 4 200 10 PW DC 1 1 = O 10 n 0.1 (1 sh ot (P Operation in this area is limited 0.01 by R DS(on) Ta = 25°C 0.001 1 shot Pulse 0.1 1 µs m ra tio 0 m s s pe 10 W ) ≤ Not 1 e 0 s) 4 10 100 1000 Drain to Source Voltage V DS (V) Ta (°C) Notes 4: When using the glass epoxy board (FR4 40x40x1.6mm) Typical Output Characteristics Typical Transfer Characteristics 10 10 6 6.5 V V DS = 10 V Pulse Test Pulse Test 6V 4 5.5 V 2 I D (A) 8 8V Drain Current Drain Current I D (A) 10 V 8 6 4 2 VGS = 5V 0 4 4 8 12 16 20 Drain to Source Voltage V DS (V) 0 Tc = 75°C 25°C —25°C 2 4 6 Gate to Source Voltage 8 10 V GS (V) HAT2088R 6 I D = 8A 4 5A 2 2A 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 2.5 Pulse Test RDS(on) (Ω) Static Drain to Source on State Resistance 0 2 V GS = 10 V 1.5 1 ID=8A 0.5 5A 0 –40 0 40 80 Cace Temperature 2A 120 160 Tc (°C) RDS(on) (Ω) 8 Drain to Source On State Resistance Pulse Test Forward Transfer Admittance |yfs| (S) Drain to Source Voltage V DS(on) (V) 10 Drain to Source Saturation Voltage vs Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test VGS = 10 V, 15 V 2 1 0.5 0.2 0.1 0.1 0.2 50 0.5 1 2 Drain Current 5 10 20 I D (A) 50 Forward Transfer Admittance vs. Drain Current 20 10 5 Tc = –25°C 2 25°C 1 75°C 0.5 0.2 0.1 0.1 0.2 V DS = 10 V Pulse Test 0.5 1 2 Drain Current 5 10 20 50 I D (A) 5 HAT2088R Typical Capacitance vs. Drain to Source Voltage 1000 5000 500 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time 200 100 50 10 0.1 1000 Ciss 500 200 100 Coss 50 20 di / dt = 100 A / µs V GS = 0, Ta = 25°C 20 VGS = 0 f = 1 MHz Crss 10 5 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 20 300 VGS 12 200 VDS 8 100 0 4 V DD = 160 V 100 V 50 V 4 8 Gate Charge 6 16 V DD = 160 V 100 V 50 V 12 16 Qg (nC) 0 20 200 Switching Time t (ns) 400 V GS (V) I D= 2 A 60 80 100 Switching Characteristics 500 20 Gate to Source Voltage Drain to Source Voltage V DS (V) Dynamic Input Characteristics 500 40 Drain to Source Voltage V DS (V) 100 V GS = 10 V, V DD = 100 V PW = 5 µs, duty ≤ 1 % R G =10 Ω t d(off) 50 20 10 5 t d(on) tr tf 2 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 50 HAT2088R Gate to Source Cutoff voltage vs. Case Temperature Reverce Drain Current vs. Source to Drain Voltage Gate to Source Cutoff Voltage V GS(off) (V) Reverce Drain Current I DR (A) 10 8 6 V GS = 0 V 4 10 V 2 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 5 V DS = 10 V I D = 10mA 4 1mA 3 0.1mA 2 1 0 -40 V SD (V) Switching Time Test Circuit 0 40 80 Case Temperature 120 160 Tc (°C) Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 100 V Vout 10% 10% 90% td(on) tr 10% 90% td(off) tf 7 HAT2088R Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 D=1 1 0.5 0.2 0.1 0.1 0.05 θ ch — f(t) =γ s (t) ¥ ch — f θ ch — f = 83.325°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6mm) 0.02 0.01 0.01 0.001 0.0001 10 µ D= u tp o 1sh PDM lse PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) 8 PW T 100 1000 1000 HAT2088R Package Dimensions Unit: mm 3.95 4.90 5.3 Max 5 8 *0.22 ± 0.03 0.20 ± 0.03 4 1.75 Max 1 0.75 Max + 0.10 6.10 – 0.30 1.08 *0.42 ± 0.08 0.40 ± 0.06 0.14 – 0.04 1.27 + 0.11 0° – 8° + 0.67 0.60 – 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension Hitachi Code JEDEC EIAJ Mass (reference value) FP-8DA Conforms — 0.085 g 9 HAT2088R Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 10