HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs March 2004 Features Packages JEDEC TO-220AB • Logic Level Gate Drive E C • Internal Voltage Clamp G COLLECTOR (FLANGE) • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable JEDEC TO-263AB Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. E JEDEC TO-262AA E PACKAGE C G COLLECTOR (FLANGE) PACKAGING PART NUMBER COLLECTOR (FLANGE) G BRAND HGTP20N36G3VL TO-220AB 20N36GVL HGT1S20N36G3VL TO-262AA 20N36GVL HGT1S20N36G3VLS TO-263AB 20N36GVL Symbol COLLECTOR The development type number for this device is TA49296. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Bkdn Voltage At 10mA, RGE = 1kΩ . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100 Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +150oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD HGTP20N36G3VL HGT1S20N36G3VL HGT1S20N36G3VLS 395 28 37.7 26 ±10 21 16 500 150 1.0 -40 to +175 260 6 UNITS V V A A V A A mJ W W/oC o C o C KV NOTE: May be exceeded if IGEM is limited to 10mA. ©2004 Fairchild Semiconductor Corporation HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL BVCES BVCER TEST CONDITIONS IC = 10mA, VGE = 0V IC = 10mA VGE = 0V RGE = 1kΩ MIN TYP MAX UNITS TC = +175oC 345 380 415 V TC = +25oC 355 385 415 V TC = -40oC 355 390 425 V TC = +175oC 320 360 395 V TC = +25oC 335 365 395 V TC = -40oC 335 370 410 V Gate-Emitter Plateau Voltage VGEP IC = 10A VCE = 12V TC = +25oC - 3.7 - V Gate Charge QG(ON) IC = 10A VGE = 5V VCE = 12V TC = +25oC - 28.7 - nC Collector-Emitter Clamp Breakdown Voltage BVCE(CL) IC = 10A RG = 1KΩ TC = +175oC 330 360 415 V Emitter-Collector Breakdown Voltage BVECS IC = 10mA TC = +25oC 28 36 - V VCE = 250V TC = +25oC - - 5 µA VCE = 250V TC = +175oC - - 250 µA IECS VEC = 24V TC = +25oC - - 1.0 mA VCE(SAT) IC = 10A VGE = 4.5V TC = +25oC - 1.3 1.6 V TC = +175oC - 1.25 1.5 V TC = +25oC - 1.6 1.9 V TC = +175oC - 1.9 2.4 V TC = +25oC 1.1 1.6 2.3 V Collector-Emitter Leakage Current Emitter-Collector Leakage Current Collector-Emitter Saturation Voltage ICES IC = 20A VGE = 5.0V Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA VCE = VGE Gate Series Resistance R1 TC = +25oC - 75 - Ω Gate-Emitter Resistance R2 TC = +25oC 10 20 30 kΩ Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load Inductive Use Test Thermal Resistance ©2004 Fairchild Semiconductor Corporation IGES VGE = ±10V ±330 ±500 ±1000 µA BVGES IGES = ±2mA ±12 ±14 - V - 15 30 µs TC = +150oC 16 - - A TC = +25oC 21 - - A - - 1.0 tD(OFF)I + tF(OFF)I ISCIS RθJC IC = 10A, RG = 25Ω, L = 550µH, RL = 26.4Ω, VGE = 5V, VCL = 300V, TC = +175oC L = 2.3mH, VG = 5V, RG = 1KΩ o C/W HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS ICE, COLLECTOR to EMITTER CURRENT (A) ICE, COLLECTOR to EMITTER CURRENT (A) Typical Performance Curves 50 PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V 40 30 TC = 175oC 20 TC = 25oC 10 TC = -40oC 0 1 3 2 4 5 100 VGE = 10V 80 5.0V 60 4.5V 40 4.0V 3.5V 20 PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC 0 6 ICE , COLLECTOR to EMITTER CURRENT (A) ICE , COLLECTOR to EMITTER CURRENT (A) VGE = 5.0V 30 VGE = 4.5V 20 VGE = 4.0V 10 0 8 10 1 2 3 VCE(SAT) , SATURATION VOLTAGE (V) 50 25oC 40 175oC 30 20 10 0 1 0 4 -40oC VGE = 4.5V 3 2 4 5 VCE(SAT) , SATURATION VOLTAGE (V) FIGURE 3. COLLECTOR to EMITTER CURRENT vs SATURATION VOLTAGE FIGURE 4. COLLECTOR to EMITTER CURRENT vs SATURATION VOLTAGE 2.2 ICE = 10A VGE = 4.0V 1.3 VGE = 4.5V VGE = 5.0V 1.2 1.1 VCE(SAT) , SATURATION VOLTAGE (V) VCE(SAT) , SATURATION VOLTAGE (V) 6 FIGURE 2. SATURATION CHARACTERISTICS TC = 175oC 1.4 4 VCE, COLLECTOR to EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS 0 2 0 VGE, GATE to EMITTER VOLTAGE (V) 40 7V ICE = 20A 2.1 VGE = 4.0V 2.0 1.9 VGE = 4.5V 1.8 1.7 4.5V VGE = 5.0V 1.6 1.5 -25 25 75 125 175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 5. SATURATION VOLTAGE vs JUNCTION TEMPERATURE ©2004 Fairchild Semiconductor Corporation -25 25 75 125 175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 6. SATURATION VOLTAGE vs JUNCTION TEMPERATURE HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS 40 VGE = 5.0V 30 20 10 0 25 50 75 125 100 150 175 VTH, NORMAILZED THRESHOLD VOLTAGE (V) ICE, COLLECTOR-EMITTER CURRENT (A) Typical Performance Curves (Continued) 1.2 ICE = 1mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 104 t(OFF)I, TURN OFF TIME (µs) LEAKAGE CURRENT (µA) 18 VECS = 20V 3 10 102 101 VCES = 250V 100 100 16 ICE = 6A, RL= 50Ω 14 ICE =10A, RL= 30Ω 12 ICE =15A, RL= 20Ω 150 125 175 25 TJ , JUNCTION TEMPERATURE (oC) 50 75 100 125 150 175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. LEAKAGE CURRENT vs JUNCTION TEMPERATURE FIGURE 10. TURN-OFF TIME vs JUNCTION TEMPERATURE 60 500 VGE = 5V, RG = 1K, VDD = 14V VGE = 5V, RG = 1K, VDD = 14V 50 500 EAS , ENERGY (mJ) ICE , COLLECTOR-EMITTER CURRENT (A) 175 VCL= 300V, RGE = 25Ω, VGE = 5V, L= 550µH 10 75 125 FIGURE 8. NORMALIZED THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 105 50 75 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. COLLECTOR-EMITTER CURRENT vs CASE TEMPERATURE 10-1 25 25 -25 TC, CASE TEMPERATURE (oC) 40 30 +25oC 20 +25oC 400 300 +150oC 200 +150oC 10 100 0 0 2 4 6 8 INDUCTANCE (mH) FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs INDUCTANCE ©2004 Fairchild Semiconductor Corporation 10 0 0 1 2 3 INDUCTANCE (mH) 4 5 FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY vs INDUCTANCE HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS 1600 60 FREQUENCY = 1MHz 1400 50 C, CAPACITANCE (pF) ICE , COLLECTOR-EMITTER CURRENT (A) Typical Performance Curves (Continued) 40 30 +25oC 20 10 o +150 C 1200 CIES 1000 800 600 COES 400 200 CRES 0 0 50 100 150 200 250 300 350 0 400 5 20 10 15 VCE , COLLECTOR-TO-EMITTER VOLTAGE (V) 0 tCLP, TIME IN CLAMP (µS) 6 IG REF = 1.022mA, RL = 1.2Ω, TC = +25oC 10 5 VCE = 12V 8 4 6 3 VCE = 8V VCE = 4V 4 2 1 2 0 0 20 10 40 30 0 FIGURE 14. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 12 VGE, GATE-EMITTER VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) FIGURE 13. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs TIME IN CLAMP 100 0.5 t1 0.2 PD 10-1 0.1 t2 0.05 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.02 0.01 10-2 10-5 QG, GATE CHARGE (nC) 25 SINGLE PULSE 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 13. GATE CHARGE FIGURE 14. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 350 BVCER , COLLECTOR-EMITTER BREAKDOWN VOLTAGE (V) ICER = 10mA 345 TC = 25oC AND 175oC 340 335 0 2 4 6 8 10 RGE , GATE-TO-EMITTER RESISTANCE (KΩ) FIGURE 15.BREAKDOWN VOLTAGE vs GATE EMITTER RESISTANCE ©2004 Fairchild Semiconductor Corporation HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Test Circuits RL 2.3mH L = 550µH VDD C RGEN = 25Ω RG C 1/RG = 1/RGEN + 1/RGE RGEN = 50Ω DUT G DUT G 5V - 10V E + VCC 300V RGE = 50Ω E FIGURE 16. USE TEST CIRCUIT ©2004 Fairchild Semiconductor Corporation FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I9